Sub-wavelength structural material having patch type array and compatibility of low detectability for infrared, laser, and microwave

Patent metadata

Field	Value
Publication number	US-11592602-B2
Application number	US-201816652861-A
Country	US
Kind code	B2
Filing date	Jul 17, 2018
Priority date	Dec 13, 2017
Publication date	Feb 28, 2023
Grant date	Feb 28, 2023

Abstract

The present disclosure provides a sub-wavelength structural material having compatibility of low detectability for infrared, laser, and microwave, which includes, from top to bottom, a metal type frequency selective surface layer I, a dielectric layer I, a metal type frequency selective surface layer II, a dielectric layer II, a resistive film, a dielectric layer III. Each of the metal type frequency selective surface layers is a sub-wavelength patch type array, and metal used by the metal type frequency selective surface layers has a characteristic of low infrared emissivity. The present disclosure modulates a phase by using a phase difference generated by patches with different sizes on the metal type frequency selective surface layer I, so as to control backscattering of incident electromagnetic waves to achieve compatibility of low detectability for laser and infrared, while the bottom three layers achieve absorption of microwave.

First claim

We claim:

1. A sub-wavelength structural material having compatibility of low detectability for infrared, laser, and microwave, comprising:
a metal type frequency selective surface layer I, the metal type frequency selective surface layer I being a sub-wavelength patch type array;
a dielectric layer I disposed below the metal type frequency selective surface layer I;
a metal type frequency selective surface layer II disposed below the dielectric layer I, the metal type frequency selective surface layer II being also a sub-wavelength patch type array;
a dielectric layer II disposed below the metal type frequency selective surface layer II;
a resistive film layer disposed below the dielectric layer II; and
a dielectric layer III disposed below the resistive film layer,
wherein the metal type frequency selective surface layer I, the dielectric layer I and the metal type frequency selective surface layer II are used to realize low detectability for laser and infrared, and the dielectric layer II, the resistive film layer, the dielectric layer III, and a metal reflective plate are used to realize absorption of microwaves.

2. The sub-wavelength structural material according to claim 1 , wherein
a thickness t 1 of the metal type frequency selective surface layer I is 0.05 μm to 0.1 μm;
a thickness t 2 of the dielectric layer I is 1 μm to 2 μm;
a thickness t 3 of the metal type frequency selective surface layer II is 0.08 μm to 0.15 μm;
a thickness t 4 of the dielectric layer II is 1.6 mm to 3 mm;
a thickness t 5 of the resistive film layer is 0.01 mm to 0.03 mm; and
a thickness t 6 of the dielectric layer III is 1.2 mm to 2.8 mm.

3. The sub-wavelength structural material according to claim 1 , wherein a square resistance Rs of the resistive film layer is 20Ω/□ to 200Ω/□.

4. The sub-wavelength structural material according to claim 1 , wherein a dielectric constant Er 1 of the dielectric layer I is 1.5 to 3.5, and a dielectric loss tan δ 1 of the dielectric layer I is 0.001 to 0.03.

5. The sub-wavelength structural material according to claim 1 , wherein a dielectric constant Er 2 of the dielectric layer II is 2 to 6, and a dielectric loss tan δ 2 of the dielectric layer II is 0.001 to 0.09.

6. The sub-wavelength structural material according to claim 1 , wherein a dielectric constant Er 3 of the dielectric layer III is 2 to 8, and a dielectric loss tan δ 2 of the dielectric layer III is 0.001 to 0.09.

7. The sub-wavelength structural material according to claim 1 , wherein metal used by the metal type frequency selective surface layer I and the metal type frequency selective surface layer II has a characteristic of low infrared emissivity.

8. The sub-wavelength structural material according to claim 7 , wherein the metal having low infrared emissivity is gold, silver, aluminum, copper, or platinum.

9. The sub-wavelength structural material according to claim 7 , wherein the metal type frequency selective surface layer I has different patches having a reflection phase difference, so that effective scattering for incident infrared waves is realized by combining the different patches.

10. The sub-wavelength structural material according to claim 7 , wherein the metal type frequency selective surface layer II is used to provide reflection.

11. The sub-wavelength structural material according to claim 7 , wherein a periodic unit size p of the metal type frequency selective surface layer I having the patch type array is 2.6 μm to 4.8 μm, and a scale factor x 1 of the periodic unit p is 0.5 to 0.8, and a scale factor x 2 of the periodic unit p is 0.1 to 0.4.

12. The sub-wavelength structural material according to claim 7 , wherein a periodic unit size q of the metal type frequency selective surface layer II having the patch type array is 2.6 μm to 4.8 μm, and a scale factory of the periodic unit q is 0.9 to 0.98.

Assignees

• Inst Optics & Electronics Cas
• The Inst Of Optics And Electronics Chinese Academy Of Sciences

Inventors

• Luo Xiangang
• Pu Mingbo
• Li Xiong
• Ma Xiaoliang
• Shen Guoqing

Classifications

• G02B5/003

  Light absorbing elements · CPC title

• H01Q15/0026

  said selective devices having a stacked geometry or having multiple layers · CPC title

• H01Q17/00

  Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems · CPC title

• G02B1/002

  made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title

• G02B5/0215 Primary

  the surface having a regular structure · CPC title