Capacitor

Patent metadata

Field	Value
Publication number	US-11587738-B2
Application number	US-202117536310-A
Country	US
Kind code	B2
Filing date	Nov 29, 2021
Priority date	Jul 26, 2017
Publication date	Feb 21, 2023
Grant date	Feb 21, 2023

Abstract

A capacitor that includes a substrate, a lower electrode on the substrate, a dielectric film on the lower electrode, an upper electrode on a part of the dielectric film, a protective layer that covers the lower electrode and the upper electrode, and an external electrode that penetrates the protective layer. The external electrode is formed only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate.

First claim

The invention claimed is:

1. A capacitor comprising:
a substrate;
a lower electrode on the substrate;
a dielectric film on the lower electrode;
an upper electrode on a part of the dielectric film;
a protective layer covering the lower electrode and the upper electrode, wherein the dielectric layer and the protective layer define an opening to the lower electrode;
a first external electrode that penetrates the protective layer and is electrically connected to the upper electrode, and wherein the first external electrode is formed only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate; and
a second external electrode that penetrates the protective layer and the dielectric film and is electrically connected to the lower electrode, the second external electrode is in contact with the dielectric film and includes a portion on an upper surface of the protective layer remote from the substrate, and the second external electrode extends into the opening to the lower electrode defined by the dielectric layer and the protective layer such that only the protective layer and the dielectric layer are between the lower electrode and the portion of the second external electrode on the upper surface of the protective layer remote from the substrate.

2. The capacitor according to claim 1 , wherein the dielectric film covers upper and side surfaces of the lower electrode.

3. The capacitor according to claim 1 , further comprising an insulating film between the substrate and the lower electrode.

4. The capacitor according to claim 1 , wherein a material of the upper electrode is a metal or a conductor containing the metal.

5. The capacitor according to claim 1 , wherein a material of the protective layer is a resin material.

6. A method of manufacturing a capacitor, the method comprising:
forming a lower electrode on a substrate;
forming a dielectric film on the lower electrode;
forming an upper electrode on a part of the dielectric film;
covering the lower electrode and the upper electrode with a protective layer wherein the dielectric layer and the protective layer define an opening to the lower electrode;
forming a first external electrode only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate, the first external electrode penetrating the protective layer and being electrically connected to the upper electrode pattern; and
forming a second external electrode in contact with the dielectric film, the second external electrode penetrating the protective layer and the dielectric film and being electrically connected to the lower electrode pattern, the second external electrode including a portion on an upper surface of the protective layer remote from the substrate, and the second external electrode extending into the opening to the lower electrode defined by the dielectric layer and the protective layer such that only the protective layer and the dielectric layer are between the lower electrode and the portion of the second external electrode on the upper surface of the protective layer remote from the substrate.

7. The method of manufacturing a capacitor according to claim 6 , wherein the dielectric film is formed so as to cover upper and side surfaces of the lower electrode.

8. The method of manufacturing a capacitor according to claim 6 , further comprising forming an insulating film between the substrate and the lower electrode.

9. The method of manufacturing a capacitor according to claim 6 , wherein a material of the upper electrode is a metal or a conductor containing the metal.

10. The method of manufacturing a capacitor according to claim 6 , wherein a material of the protective layer is a resin material.

Assignees

• Murata Manufacturing Co

Inventors

• Harada Masatomi
• Izumitani Junko
• Kagawa Takeshi
• Matsubara Hiroshi

Classifications

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D84/00

  Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers · CPC title

• H01G4/33 Primary

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title

• H01G4/12

  Ceramic dielectrics {(H01G4/085 takes precedence)} · CPC title