Semiconductor laser diode

Patent metadata

Field	Value
Publication number	US-11581702-B2
Application number	US-201816608552-A
Country	US
Kind code	B2
Filing date	May 17, 2018
Priority date	May 31, 2017
Publication date	Feb 14, 2023
Grant date	Feb 14, 2023

Abstract

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

First claim

The invention claimed is:

1. A semiconductor laser diode comprising:
a first resonator; and
a second resonator,
wherein the first and second resonators have parallel resonator directions along a longitudinal direction and are monolithically integrated into the semiconductor laser diode,
wherein the first resonator comprises at least a part of a semiconductor layer sequence comprising an active layer and an active region configured to be electrically pumped and to generate a first light,
wherein the longitudinal direction is parallel to a main extension plane of the active layer and perpendicular to a growth direction of the semiconductor layer sequence,
wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light and configured to generate a second light which is partially emitted outwards from the second resonator,
wherein the first and second resonators are optically and mechanically coupled to each other along a surface perpendicular to a light-outcoupling surface by an at least partially transparent connecting layer which is dichroic and which is at least partially transparent to the first light and opaque to the second light, and
wherein the connecting layer is arranged between the first resonator and the second resonator.

2. The semiconductor laser diode according to claim 1 , wherein the first resonator and the second resonator are offset to each other in a direction perpendicular to the longitudinal direction.

3. The semiconductor laser diode according to claim 1 , wherein the first and second resonators are arranged one above the other in a vertical direction corresponding to the growth direction of the semiconductor layer sequence.

4. The semiconductor laser diode according to claim 1 , wherein the second resonator comprises a first part and a second part, each part comprising the laser-active material, and wherein the semiconductor layer sequence of the first resonator is arranged between the first part and the second part.

5. The semiconductor laser diode according to claim 1 , wherein the first and second resonators are arranged side by side in a lateral direction perpendicular to both the longitudinal and vertical directions.

6. The semiconductor laser diode according to claim 1 , wherein the second resonator comprises a recess in which the first resonator is arranged.

7. The semiconductor laser diode according to claim 1 , wherein the first resonator comprises a recess in which the second resonator is arranged.

8. The semiconductor laser diode according to claim 1 , wherein the active region of the second resonator comprises:
at least in part a material that is selected from the group consisting of GaN, SiC, sapphire, YAG and YVO 4 ; and
at least one dopant which acts as luminous center and which is selected from the group consisting of Ce, Cr, Er, Nd, Ti, Pr and Yb.

9. The semiconductor laser diode according to claim 1 , wherein the active region of the second resonator comprises at least a part of the semiconductor layer sequence.

10. The semiconductor laser diode according to claim 9 , wherein the first and second resonators are parts of the same semiconductor layer sequence.

11. The semiconductor laser diode according to claim 1 , wherein the semiconductor layer sequence of the first resonator is free of cladding layers on a side facing the laser-active material of the second resonator, and the laser-active material of the second resonator forms a cladding layer for the first resonator.

12. The semiconductor laser diode according to claim 1 , wherein the semiconductor laser diode comprises a plurality of first resonators and/or a plurality of second resonators, and all of the first and second resonators of the semiconductor laser diode are monolithically integrated into the semiconductor laser diode.

13. The semiconductor laser diode according to claim 1 , wherein the first resonator is completely mirror-coated on two sides for the first light.

14. The semiconductor laser diode according to claim 1 , wherein the semiconductor laser diode comprises:
a first side surface forming the light-outcoupling surface;
a second side surface forming a rear surface; and
an outcoupling mirror layer provided on the first side surface,
wherein the mirror layer is configured to completely reflect the first light and is partially transparent to the second light.

15. The semiconductor laser diode according to claim 14 , wherein the outcoupling mirror layer comprises a first mirror layer and second mirror layer, the first mirror layer being fully reflective to the first light and the second mirror layer being more reflective to the second light than the first mirror layer.

16. The semiconductor laser diode according to claim 1 , wherein the semiconductor laser diode comprising:
a first side surface forming the light-outcoupling surface;
a second side surface forming a rear surface; and
at least one further side surface and/or a bottom side on which a mirroring is located.

17. A semiconductor laser diode comprising:
a first resonator;
a second resonator;
a first side surface forming a light-outcoupling surface; and
an outcoupling mirror layer located on the first side surface,
wherein the first and second resonators have parallel resonator directions along a longitudinal direction and are monolithically integrated into the semiconductor laser diode,
wherein the first resonator comprises at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped and to generate a first light,
wherein the longitudinal direction is parallel to a main extension plane of the active layer and perpendicular to a growth direction of the semiconductor layer sequence,
wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to generate a second light partially emitted outwards from the second resonator,
wherein the first and second resonators are optically and mechanically coupled to each other along a surface perpendicular to the light-outcoupling surface by an at least partially transparent connecting layer which is dichroic and which is at least partially transparent to the first light and opaque to the second light,
wherein the first side surface is perpendicular to the longitudinal direction, and
wherein the connecting layer is configured for a wafer bonding of the first resonator with the second resonator.

18. The semiconductor laser diode according to claim 17 , wherein the first resonator and the second resonator are offset to each other in a direction perpendicular to the longitudinal direction.

19. The semiconductor laser diode according to claim 17 , wherein the active region of the second resonator comprises:
at least in part a material that is selected from the group consisting of GaN, SiC, sapphire, YAG and YVO 4 ; and
at least one dopant which acts as luminous center and which is selected from the group consisting of Ce, Cr, Er, Nd, Ti, Pr and Yb.

20. The semiconductor laser diode according to claim 17 , wherein the semiconductor laser diode comprises a second side surface forming a rear surface, and wherein the mirror layer is configured to completely reflect the first light and is partially transparent to the second light.

21. A semiconductor laser diode comprising:
a first resonator;
a second resonator;
a first side

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Stojetz Bernhard
• Eichler Christoph
• Lell Alfred
• Gerhard Sven

Classifications

• H10H20/042

  Superluminescent diodes · CPC title

• H01S3/1643

  YAG · CPC title

• H01S3/0941

  of a laser diode · CPC title

• H01S3/094084

  with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators · CPC title

• H01S3/0632

  Thin film lasers in which light propagates in the plane of the thin film · CPC title