Method of forming a graphene device using polymer material as a support for a graphene film

US11577960B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11577960-B2
Application numberUS-201615557039-A
CountryUS
Kind codeB2
Filing dateMar 9, 2016
Priority dateMar 9, 2015
Publication dateFeb 14, 2023
Grant dateFeb 14, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention concerns a method of forming a graphene device, the method comprising: forming a graphene film (100) over a substrate; depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; wherein the surface on which the conductive graphene film is formed comprises a mold having a shape of a three-dimensional form; and wherein: the mold is formed of a first material and at least one zone of a second material; during the formation of the conductive graphene film, graphene selectively forms on the at least one zone of the second material and not on the first material; and the graphene support layer of parylene is deposited over the conductive graphene film and at least a portion of the first material. 2. The method of claim 1 , further comprising, after removing the substrate from the conductive graphene film, performing a further gas phase deposition of parylene to encapsulate the conductive graphene film. 3. A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited to form a conductive track having a meandering form in a detection zone. 4. A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited in the form of a first plate of graphene formed in a detection zone and connected to a first conductive track, and wherein the method further comprises: forming a further conductive graphene film covered by a further deposition of the parylene, wherein the further conductive graphene film is deposited in the form of a second plate of graphene; and assembling the first and second conductive graphene films such that the first and second graphene plates form a capacitive interface in the detection zone separated by a layer of the parylene.

Assignees

Inventors

Classifications

  • After-treatment · CPC title

  • Hand-worn input/output arrangements, e.g. data gloves · CPC title

  • C01B32/186Primary

    by chemical vapour deposition [CVD] · CPC title

  • composed of organic material · CPC title

  • containing carbon or carbides · CPC title

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Frequently asked questions

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What does patent US11577960B2 cover?
The invention concerns a method of forming a graphene device, the method comprising: forming a graphene film (100) over a substrate; depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).
Who is the assignee on this patent?
Centre Nat Rech Scient, Univ Grenoble Alpes
What technology area does this patent fall under?
Primary CPC classification C01B32/186. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 14 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).