Drive device
US-2016352320-A1 · Dec 1, 2016 · US
US11575379B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11575379-B2 |
| Application number | US-202217648492-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 20, 2022 |
| Priority date | Mar 23, 2021 |
| Publication date | Feb 7, 2023 |
| Grant date | Feb 7, 2023 |
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Official abstract text for this publication.
Switch circuitry including an input terminal (1), said input terminal connected to the base of a first transistor (Q1) via a first resistor (R3), said first transistor being an NPN Bipolar Gate Transistor (Q1), said circuitry further comprising a second resistor (R5) connected between the base of said first transistor (Q1) and ground, and including an output line or terminal (3) connected to the collector of said first transistor (Q1), and wherein the emitter of said first transistor (Q1) is connected to ground (earth), said circuitry further including a second transistor (Q2), said second transistor being a PNP Bipolar Gate Transistor, wherein the collector of said second transistor (Q2) is connected via a third resistor (R8) to the base of said first transistor (Q1), and the emitter of said second transistor (Q2) is connected to said input terminal (1), and wherein the emitter of said second transistor (Q2) is additionally connected to the base of said second transistor (Q2) via a fourth resistor (R11); and the base of said second transistor (Q2) being additionally connected to the output terminal (3) via a fifth resistor (R10) and a diode (D1).
Opening claim text (preview).
The invention claimed is: 1. Switch circuitry comprising an input terminal ( 1 ), said input terminal connected to the base of a first transistor (Q 1 ) via a first resistor (R 3 ), said first transistor being an NPN Bipolar Gate Transistor (Q 1 ), said circuitry further comprising a second resistor (R 5 ) connected between the base of said first transistor (Q 1 ) and ground, and including an output line or terminal ( 3 ) connected to the collector of said first transistor (Q 1 ), and wherein the emitter of said first transistor (Q 1 ) is connected to said ground (earth), said circuitry further including a second transistor (Q 2 ), said second transistor being a PNP Bipolar Gate Transistor, wherein the collector of said second transistor (Q 2 ) is connected via a third resistor (R 8 ) to the base of said first transistor (Q 1 ), and the emitter of said second transistor (Q 2 ) is connected to said input terminal ( 1 ), and wherein the emitter of said second transistor (Q 2 ) is additionally connected to the base of said second transistor (Q 2 ) via a fourth resistor (R 11 ); and the base of said second transistor (Q 2 ) being additionally connected to the output terminal ( 3 ) via a fifth resistor (R 10 ) and a diode (D 1 ). 2. Circuitry as claimed in claim 1 , wherein said diode (D 1 ) is electrically connected between said fourth resistor (R 10 ) and said output line or terminal ( 3 ).
Combinations of only lateral BJTs · CPC title
Modifications for providing a predetermined threshold before switching (shaping pulses by thresholding H03K5/08) · CPC title
Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00) · CPC title
in bipolar transistor circuits · CPC title
Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load · CPC title
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