Microchip charge patterning

US11574876B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11574876-B2
Application numberUS-201816008961-A
CountryUS
Kind codeB2
Filing dateJun 14, 2018
Priority dateOct 15, 2012
Publication dateFeb 7, 2023
Grant dateFeb 7, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of forming a charge pattern on a microchip includes depositing a material on the surface of the microchip, and immersing the microchip in a fluid to develop charge in or on the material through interaction with the surrounding fluid.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming a charge pattern on a microchip, comprising: depositing a first film of a first polymer on an insulator surface of the microchip and photolithographically defining the first film to expose a portion of the insulator surface; depositing a second film of a second polymer at least partially on the first film; photolithographically patterning the second polymer to define a region separate from the portion of the first region, wherein the first polymer and the second polymer retain one of either different charges or different magnitudes of a same charge to form the charge pattern; and immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane. 2. The method as claimed in claim 1 , wherein depositing the first polymer comprises depositing one of an anionic polyelectrolyte, cationic polyelectrolyte, a non-ionic polymer, polystyrenesulfonic acid, poly(diallyldimethylammonium chloride), polyethylene, or polyvinylalcohol. 3. The method as claimed in claim 1 , wherein the non-polar fluid includes charge control agents comprise one of ionic amphiphilic surfactant materials, non-ionic amphiphilic surfactant materials, lecithin, span-80, ALOHOS, OLOA, or AOT. 4. The method of claim 1 , wherein depositing the material comprises one of spin-coating, printing, dip-coating, self-assembly, or vapor deposition. 5. The method as claimed in claim 1 , further comprising singulating the wafer into microchips.

Assignees

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Classifications

  • batch processes · CPC title

  • for identification or tracking · CPC title

  • for alignment · CPC title

  • characterised by the type of information, e.g. logos or symbols · CPC title

  • H10W46/00Primary

    Marks applied to devices, e.g. for alignment or identification · CPC title

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Frequently asked questions

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What does patent US11574876B2 cover?
A method of forming a charge pattern on a microchip includes depositing a material on the surface of the microchip, and immersing the microchip in a fluid to develop charge in or on the material through interaction with the surrounding fluid.
Who is the assignee on this patent?
Palo Alto Res Ct Inc
What technology area does this patent fall under?
Primary CPC classification H10W46/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 07 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).