Millimeter wave phased array

US11569574B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11569574-B2
Application numberUS-201916418231-A
CountryUS
Kind codeB2
Filing dateMay 21, 2019
Priority dateMay 22, 2018
Publication dateJan 31, 2023
Grant dateJan 31, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A wave phased array is manufactured using additive manufacturing technology (AMT). The wave phased array includes a radiator, a radiator dilation layer supporting the radiator, a beamformer supporting the radiator dilation layer, a beamformer dilation layer supporting the beamformer, and a substrate support layer supporting the beamformer dilation layer. At least one of the radiator, the radiator dilation layer, the beamformer, the beamformer dilation layer and the substrate support layer is fabricated at least in part by an AMT process.

First claim

Opening claim text (preview).

What is claimed is: 1. A wave phased array manufactured using additive manufacturing technology (AMT), the wave phased array comprising: a radiator including a spiral antenna; a radiator dilation layer supporting the radiator; a beamformer supporting the radiator dilation layer; a beamformer dilation layer supporting the beamformer; and a substrate support layer supporting the beamformer dilation layer, wherein at least one of the radiator, the radiator dilation layer, the beamformer, the beamformer dilation layer and the substrate support layer is fabricated by an AMT process, and wherein the radiator further includes a vertical launch surrounding feed lines for the spiral antenna and Faraday walls disposed around the feed lines and the vertical launch. 2. The wave phased array of claim 1 , wherein the wave phased array is configured to produce an electromagnetic signal having a frequency in the range of 24 GHz to 75 GHz. 3. The wave phased array of claim 1 , wherein the wave phased array is configured to produce an electromagnetic signal having a frequency of approximately 30 GHz. 4. The wave phased array of claim 1 , wherein the radiator has a thickness of approximately 97 mils. 5. The wave phased array of claim 4 , wherein the radiator dilation layer has a thickness of approximately 23 mils. 6. The wave phased array of claim 5 , wherein the beamformer has a thickness of approximately 52 mils. 7. The wave phased array of claim 6 , wherein the substrate support layer embodies chips and DC logic and has a thickness of approximately 6 mils. 8. The wave phased array of claim 1 , wherein the wave phase array has a total thickness of approximately 177 mils. 9. An AMT process for fabricating the wave phased array of claim 1 including a radiator, a radiator dilation layer supporting the radiator, a beamformer supporting the radiator dilation layer, a beamformer dilation layer supporting the beamformer, and a substrate support layer supporting the beamformer dilation layer. 10. The process of claim 9 , wherein process steps include at least one of the following: milling; conductive ink deposition; and lamination under CAD control. 11. The process of claim 9 , wherein the wave phased array is configured to produce an electromagnetic signal having a frequency in the range of 24 GHz to 75 GHz. 12. The process of claim 9 , wherein the wave phased array is configured to produce an electromagnetic signal having a frequency of approximately 30 GHz. 13. The process of claim 9 , wherein the radiator has a thickness of approximately 97 mils. 14. The process of claim 13 , wherein the radiator dilation layer has a thickness of approximately 23 mils. 15. The process of claim 14 , wherein the beamformer has a thickness of approximately 52 mils. 16. The process of claim 15 , wherein the substrate support layer embodies chips and DC logic and has a thickness of approximately 6 mils. 17. The wave phased array of claim 1 , wherein the at least one of the radiator, the radiator dilation layer, the beamformer, the beamformer dilation layer and the substrate is created by removing material by milling to create a void and depositing conductive ink to fill the void.

Assignees

Inventors

Classifications

  • Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence) · CPC title

  • Processes of additive manufacturing · CPC title

  • Products made by additive manufacturing · CPC title

  • Electricity · mapped topic

  • H01Q3/26Primary

    varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture ({H01Q3/12,} H01Q3/22, H01Q3/24 take precedence) · CPC title

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What does patent US11569574B2 cover?
A wave phased array is manufactured using additive manufacturing technology (AMT). The wave phased array includes a radiator, a radiator dilation layer supporting the radiator, a beamformer supporting the radiator dilation layer, a beamformer dilation layer supporting the beamformer, and a substrate support layer supporting the beamformer dilation layer. At least one of the radiator, the radiat…
Who is the assignee on this patent?
Raytheon Co
What technology area does this patent fall under?
Primary CPC classification H01Q3/26. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 31 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).