Brazed joint and semiconductor processing chamber component having the same

Patent metadata

Field	Value
Publication number	US-11560913-B2
Application number	US-201916249731-A
Country	US
Kind code	B2
Filing date	Jan 16, 2019
Priority date	Jan 19, 2018
Publication date	Jan 24, 2023
Grant date	Jan 24, 2023

Abstract

Methods of forming a metallic-ceramic brazed joint are disclosed herein. The method of forming the brazed joint includes deoxidizing the surface of metallic components, assembling the joint, heating the joint to fuse the joint components, and cooling the joint. In certain embodiments, the brazed joint includes a conformal layer. In further embodiments, the brazed joint has features in order to reduce stress concentrations within the joint.

First claim

What is claimed is:

1. A metallic-ceramic brazed joint for substrate processing components, comprising:
a ceramic body having a recess therein;
a conformal layer disposed on the recess;
a rod having a portion disposed within the recess;
a first layer comprising a mesh disposed within the recess;
a second layer comprising a brazing material disposed proximate to the first layer;
a third layer comprising an insert disposed proximate to the second layer; and
a fourth layer comprising a brazing material disposed proximate to the third layer.

2. The joint of claim 1 , further comprising a grounding connection coupled to the mesh.

3. The joint of claim 1 , wherein the brazing material comprises gold, titanium, palladium, silver, copper, tungsten, cobalt, chromium, iron, or combinations thereof.

4. The joint of claim 1 , wherein the rod comprises a body having at least one stress reduction feature.

5. The joint of claim 4 , wherein the at least one stress reduction feature comprises a chamfer, a rounded corner, a channel, a recess, or combinations thereof.

6. The joint of claim 1 , wherein the insert comprises:
a body having at least one expansion feature formed therein.

7. The joint of claim 1 , wherein the conformal layer comprises tungsten, titanium, chromium, or combinations thereof.

8. A metallic-ceramic brazed joint for substrate processing components, comprising:
a ceramic body having a recess therein;
a conformal layer disposed on the recess;
a rod having a portion disposed within the recess;
a sleeve surrounding a portion of the rod;
a first layer comprising a mesh disposed within the recess;
a second layer comprising a brazing material disposed proximate to the first layer;
a third layer comprising an insert disposed proximate to the second layer; and
a fourth layer comprising a brazing material disposed proximate to the third layer.

9. The joint of claim 8 , further comprising a grounding connection coupled to the mesh.

10. The joint of claim 8 , wherein the brazing material comprises gold, titanium, palladium, silver, copper, tungsten, cobalt, chromium, iron, or combinations thereof.

11. The joint of claim 8 , wherein the conformal layer comprises tungsten, titanium, chromium, or combinations thereof.

12. The joint of claim 11 , wherein the conformal layer comprises more than one layer.

13. The joint of claim 8 , wherein the conformal layer completely covers an internal surface of the recess.

14. The joint of claim 8 , wherein the rod comprises a body having at least one stress reduction feature disposed therein, wherein the at least one stress reduction feature comprises a chamfer, a rounded corner, a channel, a recess, or combinations thereof.

15. The joint of claim 8 , wherein the insert comprises a body having at least one expansion feature disposed therein, the at least one expansion feature comprising a channel, an aperture, or combinations thereof.

Assignees

• Applied Materials Inc

Inventors

• Raj Govinda
• Cho Tom K
• Mohiuddin Hamid
• Widlow Ian

Classifications

• C04B37/023

  characterised by the interlayer used (C04B37/028 takes precedence) · CPC title

• C04B2237/405

  Iron metal group, e.g. Co or Ni · CPC title

• C04B2237/72

  Forming laminates or joined articles comprising at least two interlayers directly next to each other · CPC title

• B23K2101/40

  Semiconductor devices · CPC title

• C04B2235/5216

  Inorganic · CPC title