Substrate processing apparatus
US-10201888-B2 · Feb 12, 2019 · US
US11559869B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11559869-B2 |
| Application number | US-201716349430-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 2, 2017 |
| Priority date | Nov 15, 2016 |
| Publication date | Jan 24, 2023 |
| Grant date | Jan 24, 2023 |
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A wafer edge polishing apparatus includes a cleaning mechanism exhibiting a superb effect of cleaning slurry residue adhered on a chuck table. This edge polishing device is provided with: a chuck table which sucks/holds a wafer; a rotation drive mechanism which rotates the chuck table; an edge polishing unit which polishes an edge of the wafer while supplying slurry to the wafer, which is rotating while being sucked/held by the chuck table; and a cleaning unit which removes slurry residue on the chuck table. The cleaning unit includes a cleaning head, and cleans the chuck table through high-pressure cleaning and brush-cleaning by using the cleaning head, wherein the cleaning head is provided with a high-pressure jet nozzle and a brush surrounding the periphery of the high-pressure jet nozzle.
Opening claim text (preview).
What is claimed is: 1. A wafer edge polishing apparatus comprising: a chuck table that sucks/holds a wafer; a rotation drive mechanism that rotates the chuck table; an edge polishing unit that polishes an edge of the wafer while supplying slurry to the wafer being rotated in a state of being sucked/held by the chuck table; and a cleaning unit that removes slurry residue on the chuck table, wherein the cleaning unit includes a cleaning head having a high-pressure jet nozzle and a brush provided so as to surround the high-pressure jet nozzle and is configured to clean the chuck table with brush simultaneously with high-pressure cleaning using the cleaning head. 2. The wafer edge polishing apparatus as claimed in claim 1 , wherein the cleaning unit further includes a cleaning head moving mechanism that makes the cleaning head reciprocate in the radial direction of the chuck table. 3. The wafer edge polishing apparatus as claimed in claim 2 , wherein the chuck table is provided in a processing chamber and the cleaning head moving mechanism makes the cleaning head retreat from the processing chamber during an edge polishing process and making the cleaning head enter the processing chamber during a cleaning process. 4. The wafer edge polishing apparatus as claimed in claim 1 , wherein the wafer to be polished by the edge polishing unit is previously subjected to double-sided polishing in a double-sided polishing process. 5. The wafer edge polishing apparatus as claimed in claim 1 , wherein the chuck table vacuum-sucks the wafer. 6. A wafer edge polishing method comprising: polishing an edge of a wafer being rotated in a state of being sucked/held by a chuck table while supplying slurry to the wafer; and removing slurry residue on the chuck table by providing a cleaning head having a brush so as to surround a high-pressure jet nozzle, which is used to clean the chuck table with the brush simultaneously with high-pressure cleaning. 7. The wafer edge polishing method as claimed in claim 6 , wherein the cleaning head is reciprocated in the radial direction of the chuck table. 8. The wafer edge polishing method as claimed in claim 6 , wherein the chuck table is provided in a processing chamber and the cleaning head retreats from the processing chamber during the polishing of the edge, and the cleaning head enters the processing chamber during the removing of the slurry residue. 9. The wafer edge polishing method as claimed in claim 6 , wherein the polishing of the edge is performed after double-sided polishing of both the front and back surfaces of the wafer. 10. The wafer edge polishing method as claimed in claim 6 , wherein the chuck table vacuum-sucks the wafer in the polishing of the edge. 11. The wafer edge polishing method as claimed in claim 6 , wherein the polishing of the edge is performed before single-sided polishing of mirror-finishing only the front surface of the wafer.
comprising at least one polishing chamber · CPC title
for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Dust extraction equipment on grinding or polishing machines (B24B31/12 takes precedence) · CPC title
Electricity · mapped topic
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