Sterilization structure, sterilization board and display device

Patent metadata

Field	Value
Publication number	US-11559592-B2
Application number	US-201916442860-A
Country	US
Kind code	B2
Filing date	Jun 17, 2019
Priority date	Nov 19, 2018
Publication date	Jan 24, 2023
Grant date	Jan 24, 2023

Abstract

A sterilization structure, a sterilization board, and a display device are disclosed. The sterilization structure includes an active layer, wherein, one surface of the active layer has an exposed region, and a material of the active layer includes a laser-induced graphene material.

First claim

What is claimed is:

1. A sterilization structure, comprising:
an active layer;
a source electrode layer;
a drain electrode layer;
a substrate;
a gate electrode, located on the substrate; and
a gate insulating layer, located on a side of the gate electrode away from the substrate,
wherein a surface of the active layer comprises an exposed region, and a material of the active layer comprises a laser-induced graphene material,
the source electrode layer and the drain electrode layer are disposed independently of each other, and are electrically connected with the active layer,
the exposed region of the surface of the active layer is configured to be in contact with an outside environment and to inhibit or kill bacteria on the exposed region, the exposed region of the surface of the active layer is not covered by the source electrode layer or the drain electrode layer,
the active layer is located on a side of the gate insulating layer away from the gate electrode, and an orthographic projection of the active layer on the substrate at least partially overlaps with an orthographic projection of the gate electrode on the substrate,
the source electrode layer comprises a first connecting portion connected with the active layer, the drain electrode layer comprises a second connecting portion connected with the active layer, and an orthographic projection of at least one of the first connecting portion and the second connecting portion on the active layer falls into the exposed region,
in a direction perpendicular to the substrate, on of the first connecting portion and the second connection portion is located between the active layer and the gate insulating layer, and the other one of the first connecting portion and the second connection portion is located on a side of the active layer away from the substrate.

2. The sterilization structure according to claim 1 , wherein at least one of the source electrode layer and the drain electrode layer comprises a graphene material.

3. The sterilization structure according to claim 1 , wherein the first connecting portion and the second connecting portion are disposed in different layers.

4. The sterilization structure according to claim 1 , wherein materials of the source electrode layer, the drain electrode layer, and the gate electrode all comprise a graphene material.

5. The sterilization structure according to claim 1 , wherein the active layer has a thickness ranging from 20 microns to 25 microns.

6. A sterilization board, comprising a plurality of sterilization structures according to claim 1 .

7. The sterilization board according to claim 6 , wherein the plurality of sterilization structures are arranged in an array.

8. A display device, comprising the sterilization structure according to claim 1 .

9. The display device according to claim 8 , further comprising:
a plurality of sterilization display elements arranged in an array,
wherein each of the plurality of sterilization display elements comprises a display element and the sterilization structure.

Assignees

• Hefei Xinsheng Optoelectronics Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Li Guangyao
• Ding Luke
• Cheng Leilei
• Hu Yingbin
• Fang Jingang
• Liu Ning
• Wang Qinghe
• Wang Dongfang
• Yan Liangchen

Classifications

• C01B32/182

  Graphene · CPC title

• A61L2/035 Primary

  Electrolysis · CPC title

• H10D62/882

  Graphene · CPC title

• H10D30/6741 Primary

  Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755) · CPC title

• A61L2/03

  Electric current · CPC title