Direct additive synthesis of diamond semiconductor

Patent metadata

Field	Value
Publication number	US-11557475-B2
Application number	US-202117316824-A
Country	US
Kind code	B2
Filing date	May 11, 2021
Priority date	May 10, 2018
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

In an embodiment, a system includes a three-dimensional (3D) printer, a neutral feedstock, a p-doped feedstock, an n-doped feedstock, and a laser. The 3D printer includes a platen and an enclosure. The platen includes an inert metal. The enclosure includes an inert atmosphere. The neutral feedstock is configured to be deposited onto the platen. The neutral feedstock includes a halogenated solution and a nanoparticle having a negative electron affinity. The p-doped feedstock is configured to be deposited onto the platen. The p-doped feedstock includes a boronated compound introduced to the neutral feedstock. The n-doped feedstock is configured to be deposited onto the platen. The n-doped feedstock includes a phosphorous compound introduced to the neutral feedstock. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.

First claim

What is claimed is:

1. A system comprising:
a three-dimensional (3D) printer comprising:
a platen comprising an inert metal; and
an enclosure comprising an inert atmosphere; and

a neutral feedstock configured to be deposited onto the platen, the neutral feedstock comprising a halogenated solution and a nanoparticle having a negative electron affinity;
a p-doped feedstock configured to be deposited onto the platen, the p-doped feedstock comprising a boronated compound introduced to the neutral feedstock;
an n-doped feedstock configured to be deposited onto the platen, the n-doped feedstock comprising a phosphorous compound introduced to the neutral feedstock;
a laser configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, layers of a ceramic comprising a neutral layer, a p-doped layer, and an n-doped layer.

2. The system of claim 1 , wherein:
the halogenated solution comprises carbon tetrachloride;
the nanoparticle comprises nanodiamond.

3. The system of claim 1 , wherein:
the halogenated solution comprises trichloromethyltrichlorosilane;
the nanoparticle comprises nanodiamond.

4. The system of claim 2 , wherein the ceramic comprises a polycrystalline diamond semiconductor.

5. The system of claim 3 , wherein the ceramic comprises a silicon-carbide semiconductor.

6. The system of claim 1 , wherein:
the boronated compound comprises boron trichloride; and
the phosphorous compound comprises phosphorous trichloride.

7. The system of claim 1 , wherein the ceramic is formed without a kiln.

8. A three-dimensional (3D) printer comprising:
an inert atmosphere enclosed within the three-dimensional (3D) printer; and
a platen comprising an inert metal, the platen configured to have a feedstock deposited onto it;
a control unit configured to:
deposit a first layer of a neutral feedstock onto the platen of the three-dimensional (3D) printer, wherein the neutral feedstock comprises a halogenated solution and a nanoparticle having a negative electron affinity;
induce the nanoparticle of the neutral feedstock to emit solvated electrons into the halogenated solution using a laser to form, by reduction, a first layer of a neutral ceramic;
deposit a second layer of a p-type feedstock onto the platen of the three-dimensional (3D) printer, wherein the p-type feedstock comprises a boronated compound introduced into the neutral feedstock;
induce the nanoparticle of the p-type feedstock to emit solvated electrons into the halogenated solution using the laser to form, by reduction, a second layer of a p-doped ceramic;
deposit a third layer of an n-type feedstock onto the platen of the three-dimensional (3D) printer, wherein the n-type feedstock comprises a phosphorous compound introduced into the neural feedstock;
induce the nanoparticle of the n-type feedstock to emit solvated electrons into the halogenated solution using the laser to form, by reduction, a third layer of an n-doped ceramic.

9. The three-dimensional (3D) printer of claim 8 , wherein:
the halogenated solution comprises carbon tetrachloride;
the nanoparticle comprises nanodiamond.

10. The three-dimensional (3D) printer of claim 9 , wherein the first layer of the neutral ceramic, the second layer of the p-doped ceramic, and the third layer of the n-doped ceramic form a polycrystalline diamond semiconductor.

11. The three-dimensional (3D) printer of claim 8 , wherein:
the halogenated solution comprises trichloromethyltrichlorosilane;
the nanoparticle comprises hydrogen-terminated silicon carbide nanoparticle.

12. The three-dimensional (3D) printer of claim 11 , wherein the first layer of the neutral ceramic, the second layer of the p-doped ceramic, and the third layer of the n-doped ceramic form a silicon carbide semiconductor.

13. The three-dimensional (3D) printer of claim 8 , wherein:
the boronated compound comprises boron trichloride; and
the phosphorous compound comprises phosphorous trichloride.

Assignees

• Lockheed Corp

Inventors

• Findley David Glen

Classifications

• B29C64/106

  using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material · CPC title

• C30B7/14

  the crystallising materials being formed by chemical reactions in the solution · CPC title

• B33Y30/00

  Apparatus for additive manufacturing; Details thereof or accessories therefor · CPC title

• C30B30/00

  Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions · CPC title

• B33Y10/00 Primary

  Processes of additive manufacturing · CPC title