Method of depositing tungsten and other metals in 3D NAND structures

Patent metadata

Field	Value
Publication number	US-11549175-B2
Application number	US-201917250014-A
Country	US
Kind code	B2
Filing date	May 3, 2019
Priority date	May 3, 2018
Publication date	Jan 10, 2023
Grant date	Jan 10, 2023

Abstract

Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.

First claim

What is claimed is:

1. A method comprising:
providing a structure to be filled with a metal-containing material;
exposing the structure to multiple deposition cycles, wherein each deposition cycle comprises:
exposure to a hydrogen (H 2 ) pulse followed by exposure to an inert gas purge pulse; and
exposure to multiple alternating metal precursor pulses and inert gas purge pulses, wherein the multiple alternating metal precursor pulses and inert gas purge pulses are performed without an intervening H 2 pulse.

2. The method of claim 1 , wherein the metal precursor is a chlorine-containing metal precursor and a pulse of the chlorine-containing metal precursor comprises between about 0.1% and about 1.5% of chlorine-containing metal precursor by volume.

3. The method of claim 1 , wherein the exposure to multiple alternating metal precursor pulses and inert gas purge pulses comprises turning the inert gas purge flow off during the metal precursor pulses.

4. The method of claim 1 , wherein a duration of the inert gas purge pulse is at least 1.5 times that of a metal precursor pulse.

5. The method of claim 1 , wherein each deposition cycle comprises only a single H 2 pulse.

6. The method of claim 1 , wherein each deposition cycle comprises multiple alternating H 2 pulses and inert gas purge pulses.

7. The method of claim 1 , wherein the structure is a partially fabricated three-dimension (3-D) NAND structure comprising sidewalls and a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings.

8. The method of claim 1 , wherein each deposition cycle comprises at least five alternating metal precursor pulses and inert gas purge pulses without an intervening H 2 pulse.

9. A method comprising:
providing a structure to be filled with a metal-containing material;
exposing the structure to multiple deposition cycles, wherein each deposition cycle comprises:
exposure to a multiple alternating hydrogen (H 2 ) pulses and inert gas purge pulses, wherein the multiple alternating H 2 pulses and inert gas purge pulses are performed without an intervening metal precursor pulse; and
exposure to a metal precursor pulse followed by an inert gas purge pulse.

10. The method of claim 9 , wherein the metal is tungsten (W) or molybdenum (Mo).

11. The method of claim 9 , wherein the metal precursor is a chlorine-containing metal precursor.

12. The method of claim 11 , wherein the chlorine-containing metal precursor comprises a tungsten chloride or a tungsten oxychloride.

13. The method of claim 11 , wherein the chlorine-containing metal precursor comprises a molybdenum chloride or a molybdenum oxychloride.

14. The method of claim 11 , wherein chlorine-containing metal precursor comprises at least one of WCl 5 , WCl 6 , MoCl 5 , MoO 2 Cl 2 , and MoOCl 4 .

15. The method of claim 11 , wherein a pulse of the chlorine-containing metal precursor comprises between about 0.1% and about 1.5% of chlorine-containing tungsten precursor by volume.

16. The method of claim 9 , wherein the exposure to multiple alternating H 2 pulses and inert gas purge pulses comprises turning the inert gas purge flow off during the H 2 pulses.

17. The method of claim 9 , wherein a duration of the inert gas purge pulse is at least 1.5 times that of a H 2 pulse.

18. The method of claim 9 , wherein each deposition cycle comprises at least five alternating H 2 pulses and inert gas purge pulses without an intervening metal precursor pulse.

19. The method of claim 9 , wherein each deposition cycle comprises at least ten alternating metal precursor pulses and inert gas purge pulses without an intervening metal precursor pulse.

20. The method of claim 9 , wherein each deposition cycle comprises only a single metal precursor pulse.

21. The method of claim 9 , wherein each deposition cycle comprises multiple alternating metal precursor pulses and inert gas purge pulses, without an intervening H 2 pulse.

22. The method of claim 9 , wherein the structure is a partially fabricated three-dimension (3-D) NAND structure comprising sidewalls and a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings.

Assignees

• Lam Res Corp

Inventors

• Butail Gorun
• Collins Joshua
• Bamnolker Hanna
• Varadarajan Seshasayee

Classifications

• C23C16/0272

  Deposition of sub-layers, e.g. to promote the adhesion of the main coating · CPC title

• C23C16/45523

  Pulsed gas flow or change of composition over time · CPC title

• C23C16/045 Primary

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title