Siloxane polymer containing isocyanuric acid and polyether skeletons, photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device

US11548985B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11548985-B2
Application numberUS-201916676591-A
CountryUS
Kind codeB2
Filing dateNov 7, 2019
Priority dateNov 28, 2018
Publication dateJan 10, 2023
Grant dateJan 10, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

First claim

Opening claim text (preview).

The invention claimed is: 1. A siloxane polymer comprising a polysiloxane skeleton, silphenylene skeleton, isocyanuric acid skeleton, and polyether skeleton in a backbone and having an epoxy group in a side chain, wherein the polymer comprises repeating units having the following formulae (A1) to (A4): wherein R 1 to R 4 are each independently a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, m is each independently an integer of 1 to 600, with the proviso that when m is an integer of at least 2, groups R 3 may be identical or different and groups R 4 may be identical or different, a 1 , a 2 , a 3 , and a 4 are numbers in the range: 0<a 1 <1, 0<a 2 <1, 0<a 3 <1, 0<a 4 <1, and a 1 +a 2 +a 3 +a 4 =1, X 1 is a divalent group having the formula (X1): wherein R 11 and R 12 are each independently hydrogen or methyl, n 1 and n 2 are each independently an integer of 0 to 7, R 13 is a C 1 -C 8 divalent hydrocarbon group in which an ester bond or ether bond may intervene between carbon atoms, and X 2 is a divalent group having the formula (X2): wherein R 21 and R 22 are each independently hydrogen or a C 1 -C 8 monovalent hydrocarbon group, R 23 and R 24 are each independently hydrogen or methyl, p 1 and p 2 are each independently an integer of 1 to 6, and q is an integer of 0 to 100. 2. The polymer of claim 1 wherein a film of the polymer having a thickness of 10 μm has a transmittance of at least 97% with respect to light of wavelength 405 nm. 3. The polymer of claim 1 wherein q is an integer of 5 to 20. 4. The polymer of claim 1 wherein m is an integer of 10 to 100. 5. The polymer of claim 1 wherein R 11 , R 12 , R 21 and R 22 are hydrogen. 6. The polymer of claim 1 , having a weight average molecular weight of 3,000 to 500,000. 7. A photosensitive resin composition comprising (A) the siloxane polymer of claim 1 and (B) a photoacid generator. 8. The photosensitive resin composition of claim 7 wherein component (B) is present in an amount of 0.05 to 20 parts by weight per 100 parts by weight of component (A). 9. The photosensitive resin composition of claim 7 , further comprising (C) a cationic polymerizable crosslinker. 10. The photosensitive resin composition of claim 7 , further comprising (D) a solvent. 11. The photosensitive resin composition of claim 7 , further comprising (E) an antioxidant. 12. A pattern forming process comprising the steps of: (i) applying the photosensitive resin composition of claim 7 onto a substrate to form a photosensitive resin film thereon, (ii) exposing the photosensitive resin film to radiation, and (iii) developing the exposed resin film in a developer. 13. A method for fabricating an opto-semiconductor device involving the pattern forming process of claim 12 , the device comprising the patterned photosensitive resin film. 14. The polymer of claim 1 wherein the polyether skeleton is represented by the formula (X2): wherein R 21 and R 22 are each independently hydrogen or a C 1 -C 8 monovalent hydrocarbon group, R 23 and R 24 are each independently hydrogen or methyl, p 1 and p 2 are each independently an integer of 1 to 6, and q is an integer of 0 to 100.

Assignees

Inventors

Classifications

  • Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

  • C08G77/52Primary

    containing aromatic rings · CPC title

  • Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

  • Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

  • containing polyether sequences · CPC title

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What does patent US11548985B2 cover?
A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency …
Who is the assignee on this patent?
Shinetsu Chemical Co
What technology area does this patent fall under?
Primary CPC classification C08G77/52. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 10 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).