Electrostatic chuck assembly and semiconductor manufacturing apparatus including the same
US-2018122680-A1 · May 3, 2018 · US
Member for plasma processing apparatus and plasma processing apparatus with the same
US11548827B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11548827-B2 |
| Application number | US-202016830205-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 25, 2020 |
| Priority date | Apr 4, 2019 |
| Publication date | Jan 10, 2023 |
| Grant date | Jan 10, 2023 |
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- Title
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- Abstract
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Abstract
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Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.
First claim
Opening claim text (preview).
What is claimed is: 1. A member for a plasma processing apparatus, the member consisting of a sintered body; wherein the sintered body comprises a tungsten carbide crystal phase, wherein the sintered body includes at least one type of iron group atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, wherein the sintered body includes a total content of iron group atoms in a range of 30 to 3300 atomic ppm, and wherein the sintered body includes a total content of metal atoms other than W, Fe, Co, or Ni that is 1650 atomic ppm or less. 2. The member according to claim 1 , wherein a porosity of the sintered body is 2% by volume or less. 3. The member according to a claim 1 , wherein a content of each of the Fe atom, the Co atom, and the Ni atom in the sintered body is 1650 atomic ppm or less. 4. A plasma processing apparatus comprising: a sintered body; wherein the sintered body comprises a tungsten carbide crystal phase, wherein the sintered body includes at least one type of iron group atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, wherein the sintered body includes a total content of iron group atoms in a range of 30 to 3300 atomic ppm. 5. The member according to claim 1 , wherein the member is configured with at least one component exposed to a plasma processing in the plasma processing apparatus. 6. The member according to claim 1 , wherein a content of each of the metal atoms other than the W atom, the Fe atom, the Co atom, and the Ni atom is 300 atomic ppm or less. 7. The plasma processing apparatus according to claim 4 , wherein a total content of metal atoms other than a W atom, the Fe atom, the Co atom, and the Ni atom is 1650 atomic ppm or less. 8. The plasma processing apparatus according to claim 4 , wherein a content of each of metal atoms other than the W atom, the Fe atom, the Co atom, and the Ni atom is 300 atomic ppm or less.
Assignees
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Classifications
for drying etching · CPC title
Etching · CPC title
Resistance against chemicals, e.g. against molten glass or molten salts · CPC title
Material · CPC title
Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics · CPC title
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- What does patent US11548827B2 cover?
- Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.
- Who is the assignee on this patent?
- Nippon Tungsten, Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification C04B35/5626. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 10 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).