Dielectric material, method of preparing the same, and device comprising the dielectric material

Patent metadata

Field	Value
Publication number	US-11538632-B2
Application number	US-202117368037-A
Country	US
Kind code	B2
Filing date	Jul 6, 2021
Priority date	Jan 29, 2021
Publication date	Dec 27, 2022
Grant date	Dec 27, 2022

Abstract

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:xAB3.(1−x)(BiaNab)TiO3  [Formula 1]wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements,B is at least one element selected from transition metal elements,0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.

First claim

What is claimed is:

1. A dielectric material comprising a composite represented by Formula 1:
x AB 3 .(1− x )(Bi a Na b )TiO 3   [Formula 1]

wherein, in Formula 1, A is at least one element selected from lanthanum group elements, rare earth metal elements, or alkaline earth metal elements,
B is at least one element selected from transition metal elements,
0.1≤x≤0.5, 0<a<1, 0<b<1, and a+b=1.

2. The dielectric material of claim 1 , wherein,
A is at least one of barium (Ba), strontium (Sr), calcium (Ca), or a combination thereof, and
B is at least one of nickel (Ni), palladium (Pd), lead (Pb), iron (Fe), iridium (Ir), cobalt (Co), rhodium (Rh), manganese (Mn), chromium (Cr), ruthenium (Ru), rhenium (Re), Tin (Sn), vanadium (V), Germanium (Ge), tungsten (W), zirconium (Zr), molybdenum (Mo), hafnium (Hf), uranium (U), niobium (Nb), thorium (Th), tantalum (Ta), bismuth (Bi), calcium (Ca), strontium (Sr), barium (Ba), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), magnesium (Mg), aluminum (Al), silicon (Si), scandium (Sc), zinc (Zn), gallium (Ga), rubidium (Rb), silver (Ag), cadmium (Cd), indium (In), antimony (Sb), platinum (Pt), gold (Au), lead (Pb), or a combination thereof.

3. The dielectric material of claim 1 , wherein,
A is Ba, and
B is Mg, Nb, Zr, Ta, Fe, or a combination thereof.

4. The dielectric material of claim 1 , wherein, x is 0.3 to 0.5.

5. The dielectric material of claim 1 , wherein the composite is represented by Formula 2:
x Ba(Mg y Nb 1-y )O 3 .(1 −x )(Bi a Na b )TiO 3   [Formula 2]

wherein, in Formula 2, 0.3≤x≤0.5, 0<y<1, 0<a<1, 0<b<1, and a+b=1.

6. The dielectric material of claim 1 , wherein the composite is represented by Formula 3:
x Ba(Mg 1/3 Nb 2/3 )O 3 .(1 −x )(Bi 0.5 Na 0.5 )TiO 3   [Formula 3]

wherein, in Formula 3, 0.3≤x≤0.5.

7. The dielectric material of claim 1 , wherein the composite is represented by Formula 4:
x CaSnO 3 .(1 −x )(Bi a Na b )TiO 3   [Formula 4]

wherein, in Formula 4, 0.1≤x≤0.5, 0<a<1, 0<b<1, and a+b=1.

8. The dielectric material of claim 7 , wherein, in Formula 4, x is 0.1 to 0.3.

9. The dielectric material of claim 1 , wherein the composite is at least one of xBa(Mg c Nb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Ga c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Sc c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(La c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(B c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Al c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(La c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(In c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Y c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Ce c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Nd c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Gd c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Sm c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Eu c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xBa(Tb c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Mg c Nb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Ga c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Sc c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(La c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(B c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Al c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(La c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(In c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Y c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Ce c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Nd c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Gd c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Sm c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Eu c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xSr(Tb c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Mg c Nb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Ga c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Sc c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(La c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(B c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Al c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(La c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(In c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Y c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Ce c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Nd c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Gd c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Sm c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Eu c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , xCa(Tb c Sb d )O 3 .(1−x)(Bi a Na b )TiO 3 , or a combination thereof,
wherein, x is 0.1 to 0.5, 0<a<1, 0<b<1, a+b=1, 0<c<1, 0<d<1, and c+d=1.

10. The dielectric material of claim 9 , wherein, a=0.5, b=0.5, 0<c<1, 0<d<1, and c+d=1.

11. The dielectric material of claim 1 , wherein the composite has a composite phase crystal structure including one or more selected from a rhombohedral phase, an orthorhombic phase, a cubic phase, or a tetragonal phase.

12. The dielectric material of claim 1 , wherein, in the composite is a solid solution including ABO 3 and (Bi a Na b )TiO 3 .

13. The dielectric material of claim 1 , wherein the composite has a permittivity of 400 or greater at 1 kHz to 1 MHz.

14. The dielectric material of claim 1 , wherein the composite has a resistivity of 1.0E12 Ωcm or greater.

15. The dielectric material of claim 1 , wherein the composite exhibits a capacitance change of −15% to 15% in a temperature range of −55° C. to 200° C.

16. A device comprising:
a first electrode;
a second electrode facing the first electrode; and
a dielectric layer between the first electrode and the second electrode,
wherein the dielectric layer comprises the dielectric material according to claim 1 .

17. The device of claim 16 , wherein the device is a capacitor.

18. The device of claim 16 , wherein the device is a multi-layered capacitor in which the first electrode, the dielectric layer, and the second electrode are sequentially stacked, and on the second electrode, the dielectric layer and the second electrode are repeatedly and alternately stacked.

19. A multi-layered capacitor comprising;
a plurality of internal electrodes; and
dielectric layers alternately stacked between the plurality of internal electrodes,
wherein the dielectric layers comprise the dielectric material according to claim 1 .

20. A method of preparing a dielectric material of claim 1 , the method comprising:
mechanically milling a mixture of an A compound, a B compound, a Bi compound, a Na compound, and a Ti compound; and
performing a first heat treatment under an oxidizing atmosphere.

21. The method of claim 20 , wherein the first heat treatment is performed at 600° C. to 1000° C.

22. The method of claim 20 , further comprising:
after the first heat treatment under an oxidizing atmosphere,
molding a molded body using a product from the first heat treatment; and
performing a second heat treatment on the molded body.

23. The method of claim 22 , wherein the second heat treatment is performed at 1000° C. to 1600° C.

24. The method of claim 20 , wherein the mechanical milling is at least one of ball milling, airjet milling, bead milling, roll milling, hand milling, high-energy ball milling, planetary milling, stirred ball milling, vibrating milling, mechanofusion milling, shaker milling, attritor milling, disk milling, shape milling, nauta milling, nobilta milling, high-speed mixing, or a combination thereof.

25. The method of claim 20 , wherein the mechanical milling comprises wet-milling using a solvent.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Hyeon Cheol
• Yang Daejin
• Jung Doh Won
• Jeong Taewon
• Jo Giyoung

Classifications

• H01G4/1263

  containing also zirconium oxides or zirconates · CPC title

• C04B2235/604

  Pressing at temperatures other than sintering temperatures · CPC title

• C04B2235/3224

  Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide · CPC title

• H01B19/00

  Apparatus or processes specially adapted for manufacturing insulators or insulating bodies {(manufacture of porcelain for electric insulation C04B33/26)} · CPC title

• C04B2235/3229

  Cerium oxides or oxide-forming salts thereof · CPC title