Ceramic dielectric and ceramic electronic component and device

Patent metadata

Field	Value
Publication number	US-10658113-B2
Application number	US-201816203934-A
Country	US
Kind code	B2
Filing date	Nov 29, 2018
Priority date	Jul 23, 2018
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

Disclosed are a ceramic dielectric including a composite of a first dielectric and a second dielectric, wherein each of the first dielectric and the second dielectric includes strontium (Sr) and niobium (Nb) and has a different crystal system, a ceramic electronic component, and a device.

First claim

What is claimed is:

1. A ceramic dielectric comprising
a composite comprising a first dielectric and a second dielectric,
wherein each of the first dielectric and the second dielectric comprises strontium and niobium and has a different crystal system.

2. The ceramic dielectric of claim 1 , wherein the first dielectric has a tetragonal system and the second dielectric has an orthorhombic system.

3. The ceramic dielectric of claim 2 , wherein the first dielectric comprises Sr 1-a Ba a M b Nb 2 O 6 or Sr 6-c Ba c M d Nb 10 O 30 , and
the second dielectric comprises Sr 2-2e Ba 2e M f Nb 2 O 7 ,
wherein each M is independently at least one metal or semi-metal other than strontium, barium, and niobium, and
0≤a<0.5, 0≤b≤3, 0≤c≤3, 0≤d≤3, 0≤e<0.5, and 0≤f≤3.

4. The ceramic dielectric of claim 3 , wherein M comprises at least one of cobalt, nickel, copper, zinc, manganese, magnesium, aluminum, iron, scandium, gallium, lanthanum, yttrium, bismuth, dysprosium, neodymium, samarium, holmium, cerium, europium, gadolinium, terbium, erbium, thulium, ytterbium, ruthenium, or a combination thereof.

5. The ceramic dielectric of claim 3 , wherein the first dielectric comprises Sr 1-a Ba a Nb 2 O 6 or Sr 6 Nb 10 O 30 , and
the second dielectric comprises Sr 2 Nb 2 O 7 .

6. The ceramic dielectric of claim 2 , wherein the first dielectric and the second dielectric are present in a mole ratio of about 50:50 to about 90:10.

7. The ceramic dielectric of claim 1 , wherein a Curie temperature of the composite is not in a temperature range of about −55° C. to about 200° C.

8. The ceramic dielectric of claim 1 , wherein a variation of a dielectric constant of the composite is less than or equal to about 25% in a temperature range of about 25° C. to about 150° C.

9. The ceramic dielectric of claim 1 , wherein a dielectric constant depending on a temperature of the composite satisfies Relationship Equations 1 and 2 are satisfied:
ε 1 −ε 0 /ε 0 >0  Relationship Equation 1

ε 2 −ε 0 /ε 0 >0  Relationship Equation 2

wherein, in Relationship Equations 1 and 2,
ε 0 is a dielectric constant of the composite at 25° C.,
ε 1 is a dielectric constant of the composite at 150° C., and
ε 2 is a dielectric constant of the composite at 200° C.

10. The ceramic dielectric of claim 9 , wherein the dielectric constant depending on a temperature of the composite satisfies Relationship Equation 3 is satisfied:
ε 2 −ε 1 >0  Relationship Equation 3

wherein, in Relationship Equation 3,
ε 1 is a dielectric constant of the composite at 150° C., and
ε 2 is a dielectric constant of the composite at 200° C.

11. The ceramic dielectric of claim 9 , wherein the composite has a dielectric constant of greater than or equal to about 800 at each temperature of 25° C., 150° C., and 200° C.

12. A method of manufacturing a ceramic dielectric, comprising
synthesizing a layered ceramic powder comprising strontium and niobium,
performing acid-exchange treatment of the layered ceramic powder,
pressing the acid-treated ceramic powder to obtain a pellet, and
sintering the pellet to obtain the ceramic dielectric comprising a composite comprising a first dielectric and a second dielectric, wherein each of the first dielectric and the second dielectric comprises strontium and niobium and has a different crystal system.

13. The method of claim 12 , wherein the layered ceramic powder is a layered perovskite.

14. The method of claim 12 , wherein the acid-exchange treatment comprises supplying hydrochloric acid, nitric acid, sulfuric acid, or a combination thereof to the layered ceramic powder.

15. The method of claim 12 , wherein the sintering comprises heat-treating at a first temperature and heat-treating at a second temperature that is lower than the first temperature, and
the first temperature ranges from about 1,000° C. to about 1,500° C.

16. The method of claim 15 , wherein the second temperature ranges from about 500° C. to about 950° C.

17. The method of claim 12 , wherein the first dielectric has a tetragonal system and the second dielectric has an orthorhombic system.

18. A ceramic electronic component comprising the ceramic dielectric of claim 1 .

19. The ceramic electronic component of claim 18 , wherein the ceramic electronic component comprises a multi-layer ceramic capacitor, and
the multi-layer ceramic capacitor comprises a laminate structure comprising a plurality of unit capacitors, each unit capacitor comprising a pair of electrodes and a dielectric layer comprising the ceramic dielectric.

20. A device comprising the ceramic electronic component of claim 18 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jung Doh Won
• Kwak Chan
• Jeong Tae Won

Classifications

• H01G4/30

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• H01G4/1254 Primary

  based on niobium or tungsteen, tantalum oxides or niobates, tantalates · CPC title

• C04B35/495

  based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates · CPC title

• H01G4/12

  Ceramic dielectrics {(H01G4/085 takes precedence)} · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title