Bipolar shell resurfaced perovskite quantum dots

US11535795B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11535795-B2
Application numberUS-202017094509-A
CountryUS
Kind codeB2
Filing dateNov 10, 2020
Priority dateNov 10, 2020
Publication dateDec 27, 2022
Grant dateDec 27, 2022

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Methods are disclosed to restore the halide ions lost in the purification (ligand removal) of photoluminescent cesium lead halide or FA lead halide perovskite quantum dots. Quantum dots thus prepared can be used to deposit solid films with high packing density featuring dots with <0.4 nm gaps therebetween, low trap density 1/40 of previously reported, high mobility 100× previously reported, high photoluminescent quantum yield exceeding 90%, high external quantum yield exceeding 20%, and increased stability under electrical current. The quantum dots are used to formulate inks suitable for ink jet printing, drop casting, spin coating, and other solution-based methods for forming emissive layers used in light producing semiconductor devices.

First claim

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What is claimed: 1. A method of preparing a quantum dot colloid comprising the steps of: combining perovskite quantum dots (QDs), the QDs composed of [M + ]Pb[Ha − ]3 and having outer surfaces deficient in [Ha − ], with an alkyl ammonium salt comprising [Ha − ] as the anion to bind to [Ha − ] vacancies in the QD surface, thereby producing QDs nondeficient in [Ha − ], each QD substantially surrounded by a shell comprising the alkyl groups in the alkyl ammonium salt; and exposing the QDs to a Na + [Ha − ] salt, thereby replacing the alkyl ammonium cations in the shell with Na + cations; wherein [M + ] is denotes a metal or organic cation with an oxidation state of +1 and each [Ha − ] independently denotes any halide anion. 2. The method of claim 1 wherein [M + ] is a member of the set consisting of Cs + and formamidinium. 3. The method of claim 1 wherein each [Ha−] independently denotes any halide anion selected from the set consisting of chloride, bromide, and iodide. 4. The method of claim 1 wherein the alkyl ammonium salt is an isopropyl ammonium salt. 5. The method of claim 1 wherein the alkyl ammonium salt is provided in a mixture of DMF and toluene. 6. The method of claim 1 wherein the quantum dots deficient in [Ha − ] are polyhedral in shape. 7. A quantum dot colloidal ink comprising: an organic solvent; and a plurality of perovskite quantum dots (QDs), the QDs composed of [M + ]Pb[Ha − ]3 and having outer surfaces covered in a sodium halide shell; wherein the halide anions in the shell occupy [Ha − ] sites in the perovskite lattice, and the sodium cations are electrostatically bound to the fixed halide anions; wherein [M + ] denotes a metal or organic cation with an oxidation state of +1 and each [Ha − ] independently denotes any halide anion. 8. The quantum dot colloidal ink of claim 7 wherein the quantum dots are substantially free of organic ligand molecules. 9. The quantum dot colloidal ink of claim 7 wherein the organic solvent comprises a mixture of DMF and toluene. 10. The quantum dot colloidal ink of claim 7 wherein [M + ] is a member of the set consisting of Cs + and formamidinium. 11. The quantum dot colloidal ink of claim 7 wherein each [Ha − ] independently denotes any halide anion selected from the set consisting of chloride, bromide, and iodide. 12. A semiconductor device comprising: an electroluminescent layer composed of a plurality of monodisperse halide perovskite quantum dots (QDs), the QDs composed of [M + ]Pb[Ha − ]3 wherein [M + ] is a metal or organic cation with an oxidation state of +1 and [Ha − ] is a halide anion; wherein the electroluminescent layer is substantially free of organic ligand molecules; and the mean interdot gap is less than 0.4 nm. 13. The semiconductor device of claim 12 wherein the quantum dots are polyhedral in shape. 14. The semiconductor device of claim 13 wherein more than 20% of the polyhedral quantum dots are less than 0.4 nm away from another quantum dot along an entire polyhedral edge. 15. The semiconductor device of claim 13 wherein more than 20% of the polyhedral quantum dots are less than 0.4 nm away from another quantum dot along an entire polyhedral face. 16. The semiconductor device of claim 12 further comprising a hole transport layer adjacent the electroluminescent layer, an electron transport layer adjacent the electroluminescent layer, an anode in electrical contact with the hole transport layer, and a cathode in electrical contact with the electron transport layer. 17. The semiconductor device of claim 12 wherein [M + ] is a member of the set consisting of Cs + and formamidinium. 18. The semiconductor device of claim 12 wherein [Ha − ] is a member of the set consisting of chloride, bromide, and iodide. 19. A method of forming a quantum dot light emissive layer comprising the step of: Solution processing onto a substrate a quantum dot colloidal ink comprising: an organic solvent; and a plurality of monodisperse halide perovskite quantum dots (QDs), the QDs composed of [M + ]Pb[Ha − ]3 and having outer surfaces covered in a sodium halide shell; wherein the halide anions in the shell occupy [Ha − ] sites in the perovskite lattice, and the sodium cations are ionically bound to the fixed halide anions; wherein [M + ] denotes a metal or organic cation with an oxidation state of +1 and each [Ha − ] independently denotes any halide anion. 20. The method of claim 19 wherein [M + ] is a member of the set consisting of Cs + and formamidinium; each [Ha − ] is a member of the set consisting of chloride, bromide, and iodide; the quantum dot light emissive layer is substantially free of organic ligand molecules; and the mean interdot gap is less than 0.4 nm.

Assignees

Inventors

Classifications

  • Nanooptics, e.g. quantum optics or photonic crystals · CPC title

  • non-luminescent particle coatings or suspension media · CPC title

  • Luminous paints {(luminescent compositions C09K11/00)} · CPC title

  • Compounds containing lead, with or without oxygen or hydrogen, and containing two or more other elements · CPC title

  • based on non-aqueous solvents · CPC title

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What does patent US11535795B2 cover?
Methods are disclosed to restore the halide ions lost in the purification (ligand removal) of photoluminescent cesium lead halide or FA lead halide perovskite quantum dots. Quantum dots thus prepared can be used to deposit solid films with high packing density featuring dots with <0.4 nm gaps therebetween, low trap density 1/40 of previously reported, high mobility 100× previously reported, hig…
Who is the assignee on this patent?
Huawei Tech Canada Co Ltd, The Governing Councol Of The Univ Of Toronto, Governing Council Univ Toronto
What technology area does this patent fall under?
Primary CPC classification C09K11/664. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 27 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).