Polishing composition
US-10570322-B2 · Feb 25, 2020 · US
US11530335B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11530335-B2 |
| Application number | US-201916448992-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 21, 2019 |
| Priority date | Jan 19, 2015 |
| Publication date | Dec 20, 2022 |
| Grant date | Dec 20, 2022 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.Modified colloidal silica, being obtained by modifying raw colloidal silica, whereinthe raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.
Opening claim text (preview).
The invention claimed is: 1. A method for producing modified colloidal silica, comprising the steps of: distilling off an organic solvent coexisting with colloidal silica in colloidal silica having an organic solvent concentration of 1% by mass or more under a condition of pH 7 or more so that a residual organic solvent concentration is less than 1% by mass to obtain raw colloidal silica; lowering a viscosity of the raw colloidal silica by adding an alkaline solution to the raw colloidal silica; and modifying the raw colloidal silica to obtain modified colloidal silica; wherein the modifying comprises: a first reaction step of heating the raw colloidal silica in the presence of a silane coupling agent having a functional group chemically convertible to a sulfonic acid group to obtain a reactant, wherein a mixture of the silane coupling agent and a hydrophilic solvent is added to the raw colloidal silica; and a second reaction step of treating the reactant to convert the functional group to a sulfonic acid group. 2. The method for producing modified colloidal silica according to claim 1 , wherein the functional group is a mercapto group. 3. A method for producing modified colloidal silica according to claim 1 , wherein the treatment is an oxidation treatment using an oxidizing agent. 4. The method for producing modified colloidal silica according to claim 3 , wherein an addition amount of the oxidizing agent in the oxidation treatment is 3 to 5 mol times relative to an addition amount of the silane coupling agent, and a residual oxidizing agent concentration in the obtained modified colloidal silica is 1000 ppm by mass or less. 5. The method for producing modified colloidal silica according to claim 3 , wherein the oxidizing agent is hydrogen peroxide. 6. The method for producing modified colloidal silica according to claim 1 , wherein the first reaction step is performed under a condition that a temperature condition of 90° C. or more is continued for 30 minutes or more. 7. The method for producing modified colloidal silica according to claim 1 , wherein the alkaline solution is ammonia water.
involving a dielectric removal step · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
by smoothing the dielectric parts · CPC title
Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.