Constant VDS1 Bias Control for Stacked Transistor Configuration
US-2020007088-A1 · Jan 2, 2020 · US
US11527999B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11527999-B2 |
| Application number | US-202017027093-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 21, 2020 |
| Priority date | Apr 22, 2019 |
| Publication date | Dec 13, 2022 |
| Grant date | Dec 13, 2022 |
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A circuit includes first and second gain stages and an output transistor. The second gain stage includes a transconductance amplifier and a variable impedance circuit coupled to an output of the transconductance amplifier. The variable impedance circuit is configured to implement a first impedance level at frequencies below a first frequency threshold and to implement a second impedance level at frequencies above a second frequency level. The first impedance level is larger than the second impedance level. The output transistor has a control input coupled to the variable impedance circuit. At frequencies above the second frequency threshold, the second impedance level is configured to be inversely related to current through the output transistor.
Opening claim text (preview).
What is claimed is: 1. A circuit, comprising: a first gain stage; a second gain stage comprising a transconductance amplifier and a variable impedance circuit coupled to an output of the transconductance amplifier, wherein the variable impedance circuit is configured to implement a first impedance level independent of an output load at frequencies below a first frequency threshold and to implement a second impedance level at frequencies above a second frequency threshold, the first impedance level larger than the second impedance level; and an output transistor having a control input coupled to the variable impedance circuit; wherein, at frequencies below the first frequency threshold, the variable impedance circuit is configured such that the first impedance level is independent of an amount of current through the output transistor; and wherein, at frequencies above the second frequency threshold, the variable impedance circuit is configured such that the second impedance level is inversely related to current through the output transistor. 2. The circuit of claim 1 , wherein the variable impedance circuit comprises a first transistor, a second transistor, and a low pass filter coupled between the first and second transistors. 3. The circuit of claim 1 , wherein the variable impedance circuit comprises: a first transistor coupled to the transconductance amplifier; a second transistor coupled to the first transistor to form a current mirror; a third transistor coupled to the second transistor; a fourth transistor coupled to the first transistor; and a low pass filter coupled between the third and fourth transistors. 4. The circuit of claim 3 , wherein the second frequency threshold comprises a corner frequency of the low pass filter. 5. The circuit of claim 4 , wherein, at frequencies above the corner frequency, the low pass filter decouples a signal between the third and fourth transistors. 6. The circuit of claim 3 , wherein, at frequencies above the corner frequency, the fourth transistor is configured to be off. 7. The circuit of claim 3 , wherein the low pass filter comprises a resistor coupled to a capacitor. 8. The circuit of claim 3 , wherein the first transistor is configured to conduct current that is directly proportional to current through the output transistor. 9. The circuit of claim 8 , wherein: at frequencies below the first frequency threshold, each of the second, third and fourth transistors is configured to conduct a current that is equal to the current through the first transistor; and at frequencies above the second frequency threshold, each of the second and third transistors is configured to conduct a current that is equal to the current through the first transistor, and the fourth transistor is configured to be turned off. 10. A system, comprising: a first gain stage; a second gain stage comprising a transconductance amplifier and a variable impedance circuit coupled to an output of the transconductance amplifier, wherein the variable impedance circuit is configured to implement a first impedance level at frequencies below a first frequency threshold and to implement a second impedance level at frequencies above a second frequency threshold, the first impedance level larger than the second impedance level; an output transistor having a control input coupled to the variable impedance circuit; and a load coupled to the output transistor and configured to receive current flowing through the output transistor; wherein, at frequencies below the first frequency threshold, the variable impedance circuit is configured such that the first impedance level is independent of an amount of current through the output transistor; and wherein, at frequencies above the second frequency threshold, the variable impedance circuit is configured such that the second impedance level is configured to be inversely related to an amount of current through the output transistor. 11. The system of claim 10 , wherein the variable impedance circuit comprises a first transistor, a second transistor, and a low pass filter coupled between the first and second transistors. 12. The system of claim 10 , wherein the variable impedance circuit comprises: a first transistor coupled to the transconductance amplifier; a second transistor coupled to the first transistor to form a current mirror; a third transistor coupled to the second transistor; a fourth transistor coupled to the first transistor; and a low pass filter coupled between the third and fourth transistors.
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