Optoelectronic device

Patent metadata

Field	Value
Publication number	US-11527663-B2
Application number	US-201816013451-A
Country	US
Kind code	B2
Filing date	Jun 20, 2018
Priority date	Sep 18, 2012
Publication date	Dec 13, 2022
Grant date	Dec 13, 2022

Abstract

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

First claim

The invention claimed is:

1. A process for producing a photovoltaic device comprising a photoactive region, which photoactive region comprises:
an n-type region comprising at least one n-type layer, provided that when the n-type layer comprises an inorganic material the n-type layer is a compact layer of the inorganic material;
a p-type region comprising at least one p-type layer, provided that when the p-type layer comprises an inorganic hole transporter the p-type layer is a compact layer of the inorganic hole transporter; and, disposed between the n-type region and the p-type region:
a layer of a perovskite semiconductor without open porosity wherein the perovskite comprises a halide anion and wherein the layer of the perovskite semiconductor without open porosity has a thickness of from 10 nm to 100 μm and forms a first planar heterojunction with the n-type region and a second planar heterojunction with the p-type region, which process comprises:
(a) providing a first region;
(b) disposing a second region on the first region, which second region comprises the layer of the perovskite semiconductor without open porosity wherein the perovskite comprises a halide anion and wherein the layer of the perovskite semiconductor without open porosity has a thickness of from 10 nm to 100 μm; and
(c) disposing a third region on the second region,

wherein:
the first region is the n-type region and the third region is the p-type region; or
the first region is the p-type region and the third region is the n-type region.

2. A process according to claim 1 wherein the step of (b) disposing the second region on the first region comprises:
producing a solid layer of the perovskite on the first region by vapour deposition, wherein the vapour deposition is allowed to continue until the solid layer of perovskite has said thickness of from 10 nm to 100 μm.

3. A process according to claim 2 wherein the step of producing a solid layer of the perovskite on the first region by vapour deposition comprises:
(i) exposing the first region to vapour, which vapour comprises said perovskite or one or more reactants for producing said perovskite; and
(ii) allowing deposition of the vapour onto the first region, to produce a solid layer of said perovskite thereon.

4. A process according to claim 2 wherein the vapour deposition is allowed to continue until the solid layer of perovskite has a thickness of from 100 nm to 100 μm.

5. A process according to claim 2 further comprising producing the vapour by evaporating said perovskite or evaporating one or more reactants for producing said perovskite.

6. A process according to claim 1 wherein the step (b) of disposing the second region on the first region comprises:
producing a solid layer of the perovskite by vapour deposition, wherein the vapour deposition is a dual source vapour deposition, and wherein the vapour deposition is allowed to continue until the solid layer of perovskite has the thickness of from 10 nm to 100 μm.

7. A process according to claim 1 which comprises:
(i) exposing the first region to vapour, which vapour comprises two reactants for producing the perovskite in said layer of a perovskite semiconductor without open porosity; and
(ii) allowing deposition of the vapour onto the first region, to produce the layer of the perovskite semiconductor without open porosity thereon, wherein the deposition of the vapour is allowed to continue until the layer of the perovskite semiconductor without open porosity has the thickness of from 10 nm to 100 μm;
wherein (i) further comprises producing said vapour by evaporating a first reactant from a first source and evaporating a second reactant from a second source.

8. A process according to claim 7 wherein the first reactant comprises a first compound comprising (i) a metal cation and (ii) a first anion; and the second reactant comprises a second compound comprising (i) an organic cation and (ii) a second anion.

9. A process according to claim 8 wherein the organic cation has the formula (R 1 R 2 R 3 R 4 N) + , wherein:
R 1 is hydrogen, or unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl;
R 2 is hydrogen, or unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl;
R 3 is hydrogen, or unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl; and
R 4 is hydrogen, or unsubstituted or substituted C 1 -C 20 alkyl, or unsubstituted or substituted aryl.

10. A process according to claim 8 wherein the first and second anions are different anions selected from halide ions or chalcogenide ions.

11. A process according to claim 8 wherein the first and second anions are different anions selected from halide anions.

12. A process according to claim 7 , wherein the first reactant comprises a first compound which is BX 2 and the second reactant comprises a second compound which is AX′, wherein
B is a cation selected from Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ and Eu 2+ ,
X is an anion selected from F − , Cl − , Br − and I − ,
A is a cation of formula (R 5 NH 3 ) + , wherein: R 5 is hydrogen, or unsubstituted or substituted C 1 -C 20 alkyl,
X′ is an anion selected from F − , Cl − , Br − and I − , and
X and X′ are different anions.

13. A process according to claim 3 wherein the step (b) of disposing the second region on the first region further comprises:
(iii) heating the solid layer of the perovskite.

14. A process according to claim 1 wherein the step of (b) disposing the second region on the first region comprises:
(i) exposing the first region to vapour, which vapour comprises a first perovskite precursor compound, and allowing deposition of the vapour onto the first region, to produce a solid layer of the first perovskite precursor compound thereon, wherein the vapour deposition of the first perovskite precursor compound is allowed to continue until the solid layer of the first perovskite precursor compound has a thickness of from 10 nm to 100 μm; and
(ii) treating the resulting solid layer of the first perovskite precursor compound with a solution comprising a second perovskite precursor compound, and thereby reacting the first and second perovskite precursor compounds to produce said layer of the perovskite semiconductor without open porosity,
wherein the first perovskite precursor compound comprises (i) a first cation and (ii) a first anion and the second perovskite precursor compound comprises (i) a second cation and (ii) a second anion.

15. A process according to claim 14 wherein the first perovskite precursor compound has the formula BX 2 and the second perovskite precursor compound has the formula AX′, wherein
B is a cation selected from Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ and Eu 2+ ,
X is an anion selected from F − , Cl − , Br − and I − ,
A is a cation of formula (R 5 NH 3 ) + , wherein: R 5 is hydrogen, or unsubstituted or substituted C 1 -C 20 alkyl,
X′ is an anion selected from F − , Cl − , Br − and I − , and
X and X′ are the same or different anions.

16. A process according to claim 1 wherein the step of (b) disposing the second region on the first region comprises:
(i) disposing one or more precursor solutions on the first region, which one or more precursor solutions comprise: said perovskite dissolved in a solvent, or one or more reactants for producing said perovskite dissolved in one or more solvents; and
(ii) removing the

Assignees

• Univ Oxford Innovation Ltd

Inventors

• Snaith Henry James
• Crossland Edward James William
• Hey Andrew
• Ball James
• Lee Michael
• Docampo Pablo

Classifications

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• C23C14/06 Primary

  characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) · CPC title

• H01L51/422

  Electricity · mapped topic