Shower plate, semiconductor manufacturing apparatus, and method for manufacturing shower plate
US-10920318-B2 · Feb 16, 2021 · US
US11527388B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11527388-B2 |
| Application number | US-201816633351-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 27, 2018 |
| Priority date | Jul 28, 2017 |
| Publication date | Dec 13, 2022 |
| Grant date | Dec 13, 2022 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A member for a plasma processing device of the present disclosure is a member for a plasma processing device made of ceramics and having a shape of a cylindrical body with a through hole in an axial direction. The ceramics is mainly composed of aluminum oxide, and has a plurality of crystal grains and a grain boundary phase that is present between the crystal grains. An inner peripheral surface of the cylindrical body has an arithmetic average roughness Ra of 1 μm or more and 3 μm or less, and an arithmetic height Rmax of 30 μm or more and 130 μm or less.
Opening claim text (preview).
The invention claimed is: 1. A member for a plasma processing device made of ceramics and having a shape of a cylindrical body with a through hole in an axial direction, wherein the ceramics is mainly composed of aluminum oxide, and has a plurality of crystal grains and a grain boundary phase that is present between the crystal grains, and wherein the cylindrical body has an inner peripheral surface having an arithmetic average roughness Ra of 1 μm or more and 3 μm or less, and an arithmetic height Rmax of 30 μm or more and 130 μm or less. 2. The member for a plasma processing device according to claim 1 , wherein the inner peripheral surface of the cylindrical body has an average value of kurtosis Rku of 6.0 or more. 3. The member for a plasma processing device according to claim 1 , wherein the inner peripheral surface of the cylindrical body has a projected part composed of aluminum oxide crystal grains, and a surface of the projected part is composed of a plurality of planes.
for drying etching · CPC title
Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) · CPC title
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24) · CPC title
Mixing details · CPC title
Gas supply means · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.