Methods of measuring real-time junction temperature in silicon carbide power MOSFET devices using turn-on delay, related circuits, and computer program products

Patent metadata

Field	Value
Publication number	US-11525740-B2
Application number	US-202016908997-A
Country	US
Kind code	B2
Filing date	Jun 23, 2020
Priority date	Jun 23, 2020
Publication date	Dec 13, 2022
Grant date	Dec 13, 2022

Abstract

A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.

First claim

What is claimed is:

1. A method of measuring a junction temperature of an SiC MOSFET, the method comprising:
applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET;
detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET;
detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value;
defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET; and
determining the junction temperature for the SiC MOSFET using the turn on delay time.

2. The method of claim 1 , further comprising:
decoupling the gate-source voltage from the gate of the SiC MOSFET;
injecting a constant current into the gate of the SiC MOSFET to charge an input capacitance to provide a test threshold voltage at the gate;
switching the constant current from the gate to the drain of the SiC MOSFET responsive to the test threshold voltage being sufficient to form a channel region in the SiC MOSFET to conduct the constant current;
measuring the test threshold voltage sufficient to form the channel region to provide a current threshold voltage for the SiC MOSFET; and
using the current threshold voltage for the SiC MOSFET to adjust the junction temperature to compensate for aging of the SiC MOSFET.

3. The method of claim 1 , wherein the detecting the first time when the gate-source voltage exceeds the first value configured to disable conduction of the current in the drain of the SiC MOSFET comprises detecting an increase in the gate-source voltage of about 10%.

4. The method of claim 1 , wherein detecting, after the first time, the second time further comprises:
generating a signal edge corresponding to when the voltage across the common source inductance in the package of the SiC MOSFET indicates that the current in the drain has exceeded the reference value to provide the second time; and
filtering generation of subsequent signal edges resulting from changes in the voltage across the common source inductance exceeding the reference value after the second time.

5. The method of claim 1 , wherein the detecting the first time when the gate-source voltage exceeds the first value configured to disable conduction of the current in the drain of the SiC MOSFET comprises:
comparing the gate-source voltage to the first value to provide a leading edge of a signal indicating a start of when the SiC MOSFET turns on;
comparing the voltage across the common source inductance to the reference value to provide a trailing edge of the signal corresponding to when the current in the drain begins;
filtering generation of subsequent signal edges resulting from changes in the voltage across the common source inductance exceeding the reference value after the second time;
combining the leading edge and the trailing edge to provide a pulse having a time width; and
transmitting the pulse to a microcontroller circuit to determine the junction temperature for the SiC MOSFET.

6. The method of claim wherein determining the junction temperature for the SiC MOSFET using the turn on delay time is performed in real-time.

7. The method of claim further comprising:
interrupting operation of the SiC MOSFET responsive to determining that the junction temperature for the SiC MOSFET exceeds a safe operating condition specified for a circuit in which the SiC MOSFET is embedded.

8. The method of claim further comprising:
before applying the gate-source voltage, switching from a first resistance included in the external gate loop coupled to the gate of the SiC MOSFET to a second resistance included in the external gate loop that is greater than the first resistance; and
after detecting the second time, switching from the second resistance to the first resistance.

9. The method of claim 8 , wherein after detecting the second time comprises:
after determining the junction temperature for the SiC MOSFET, receiving a signal from a microcontroller to switch from the second resistance to the first resistance.

10. The method of claim 8 , wherein the second resistance comprises a resistance value sufficient to determine the junction temperature to within an error of at least about 1 degree Centigrade.

Assignees

• Univ Texas
• Boards Of Regents The Univ Of Texas System

Inventors

• Akin Bilal
• Yang Fei
• Pu Shi
• Xu Chi
• Vankayalapati Bhanu

Classifications

• G01K7/00 Primary

  Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat (giving results other than momentary value of temperature G01K3/00) {; Power supply therefor, e.g. using thermoelectric elements} · CPC title

• G01K2217/00

  Temperature measurement using electric or magnetic components already present in the system to be measured · CPC title

• G01K7/01 Primary

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title