Dual selective deposition

Patent metadata

Field	Value
Publication number	US-11525184-B2
Application number	US-202117331971-A
Country	US
Kind code	B2
Filing date	May 27, 2021
Priority date	Apr 16, 2014
Publication date	Dec 13, 2022
Grant date	Dec 13, 2022

Abstract

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

First claim

What is claimed is:

1. A method comprising:
selectively depositing a dielectric material on a dielectric surface of a substrate relative to a metal surface of the substrate by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a first reactant; and
selectively depositing a metal on the metal surface of the substrate relative to the dielectric surface of the substrate by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a second metal precursor and a second reactant,
wherein the first precursor comprises a first metal precursor and the first reactant comprises an oxygen source.

2. The method of claim 1 , wherein the metal comprises Sb, Ge, Ru, W, Cu, Al, Ni or Co.

3. The method of claim 1 , wherein the metal is selected from Ru, W and Co.

4. The method of claim 1 , wherein the metal is selected from Cu, Al and Ni.

5. The method of claim 1 , wherein the dielectric material comprises germanium oxide, antimony oxide, bismuth oxide, magnesium oxide, aluminum oxide, silicon oxide, nickel oxide, iron oxide, titanium oxide or cobalt oxide.

6. The method of claim 1 , wherein the dielectric material is silicon oxide.

7. The method of claim 1 , wherein the dielectric material is titanium oxide or aluminum oxide.

8. The method of claim 1 , wherein the dielectric material is magnesium oxide or germanium oxide.

9. The method of claim 1 , wherein the dielectric surface of the substrate and the metal surface of the substrate are adjacent.

10. The method of claim 1 , wherein the first metal precursor is selected from the group consisting of metal betadiketonate compounds, metal betadiketiminato compounds, metal aminoalkoxide compounds, metal amidinate compounds, metal cyclopentadienyl compounds, and metal carbonyl compounds.

11. The method of claim 1 , wherein the oxygen source is selected from a group consisting of: water, ozone, molecular oxygen, N 2 O, NO, NO 2 , ClO 2 , HClO 4 , peracids, alcohols, oxygen radicals, hydroxyl radical, and H 2 O 2 .

12. The method of claim 1 , wherein from 1 to 50 deposition cycles for selectively depositing the metal are carried out prior to selectively depositing the dielectric material.

13. The method of claim 1 , wherein the metal is deposited on the metal surface of the substrate relative to the dielectric surface of the substrate with a selectivity of at least about 80%.

14. The method of claim 1 , further comprising passivating the metal surface of the substrate prior to selectively depositing the dielectric material on the dielectric surface.

15. The method of claim 1 , further comprising treating the dielectric surface to inhibit deposition of the metal thereon prior to depositing the metal on the metal surface.

16. The method of claim 1 , wherein at least one of selectively depositing the dielectric material and selectively depositing the metal comprises an atomic layer deposition (ALD) process.

17. The method of claim 1 , wherein one of selectively depositing the dielectric material and selectively depositing the metal comprises a chemical vapor deposition (CVD) process.

18. The method of claim 1 , wherein the dielectric surface comprises SiO 2 , MgO, GeO 2 , or Al 2 O 3 .

19. The method of claim 1 , wherein the metal surface comprises a metal selected from a group consisting of Cu, Ru, Al, W, Ni, Co and Sb.

20. The method of claim 1 , wherein the metal surface is oxidized to provide a metal oxide surface prior to depositing the dielectric material on the dielectric surface.

21. The method of claim 1 , wherein the dielectric material is selectively deposited on the dielectric surface of the substrate and the metal is selectively deposited on the metal surface of the substrate without further processing in between selective deposition of the dielectric material and selective deposition of the metal.

22. The method of claim 1 , wherein the dielectric material is selectively deposited on the dielectric surface of a substrate and the metal is selectively deposited on the metal surface of the substrate without an airbreak in between selective deposition of the dielectric material and selective deposition of the metal.

Assignees

• Asm Ip Holding Bv

Inventors

• Haukka Suvi P
• Matero Raija H
• Tois Eva
• Niskanen Antti
• Tuominen Marko
• Huotari Hannu
• Pore Viljami J

Classifications

• H10P14/432 Primary

  using selective deposition · CPC title

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/402

  Silicon dioxide · CPC title