Electronic device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11522082-B2
Application number	US-202017001979-A
Country	US
Kind code	B2
Filing date	Aug 25, 2020
Priority date	Sep 18, 2019
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

First claim

What is claimed is:

1. An electronic device comprising:
a substrate;
a gate electrode on the substrate;
a ferroelectric crystallization layer between the gate electrode and the substrate, the ferroelectric crystallization layer being at least partially crystallized and including a dielectric material having ferroelectricity or anti-ferroelectricity; and
a crystallization prevention layer between the ferroelectric crystallization layer and the substrate, the crystallization prevention layer including an amorphous dielectric material and being configured to prevent crystallization in the ferroelectric crystallization layer from spreading toward the substrate.

2. The electronic device of claim 1 , wherein
the substrate includes a channel element at a location corresponding to the gate electrode, and
the substrate includes a source and a drain at both sides of the channel element.

3. The electronic device of claim 2 , wherein
the channel element includes at least one of Si, Ge, SiGe, Groups III-V semiconductors, an oxide semiconductor, a nitride semiconductor, an oxynitride semiconductor, a two-dimensional (2D) semiconductor material, quantum dots, and an organic semiconductor.

4. The electronic device of claim 1 , wherein the ferroelectric crystallization layer includes a crystalline dielectric material having a dielectric constant that is greater than about 20.

5. The electronic device of claim 4 , wherein the ferroelectric crystallization layer includes an oxide that includes at least one of Si, Al, Hf, and Zr.

6. The electronic device of claim 4 , wherein the ferroelectric crystallization layer further includes a dopant.

7. The electronic device of claim 1 , wherein the crystallization prevention layer has a dielectric constant that is greater than about 4 and includes a different dielectric material than a material of the ferroelectric crystallization layer.

8. The electronic device of claim 7 , wherein the crystallization prevention layer includes at least one of AlO x (0<x<1), LaO x (0<x<1), YO x (0<x<1), LaAlO x (0<x<1), TaO x (0<x<1), TiO x (0<x<1), SrTiO x (0<x<1), CaO, MgO, ZrSiO, and a 2D dielectric material.

9. The electronic device of claim 1 , further comprising:
a high dielectric layer between the crystallization prevention layer and the substrate, wherein
the high dielectric layer has a higher dielectric constant than silicon oxide and includes a different dielectric material than a material of the crystallization prevention layer.

10. The electronic device of claim 9 , wherein the high dielectric layer includes an amorphous dielectric material or a crystalline dielectric material.

11. The electronic device of claim 9 , further comprising:
a high band gap layer between the high dielectric layer and the substrate, wherein
the high band gap layer includes an amorphous dielectric material having a greater band gap than a material of the high dielectric layer.

12. An electronic device comprising:
a channel element including an intermediate region between a first side and a second side;
a gate electrode on the intermediate region of the channel element;
a ferroelectric crystallization layer between the gate electrode and the channel element, the ferroelectric crystallization layer being at least partially crystallized and including a dielectric material having ferroelectricity or anti-ferroelectricity; and
a crystallization prevention layer between the ferroelectric crystallization layer and the channel element,
the crystallization prevention layer including an amorphous dielectric material and being configured to prevent crystallization in the ferroelectric crystallization layer from spreading toward the channel element.

13. The electronic device of claim 12 , wherein
the crystallization prevention layer includes at least one of AlO x (0<x<1), LaO x (0<x<1), YO x (0<x<1), LaAlO x (0<x<1), TaO x (0<x<1), TiO x (0<x<1), SrTiO x (0<x<1), CaO, MgO, ZrSiO, and a two-dimensional (2D) dielectric material, and
the ferroelectric crystallization layer includes ZrO 2 , HfO 2 , La 2 O 3 , Ta 2 O 5 , BaO, or TiO 2 .

14. The electronic device of claim 13 , further comprising:
a substrate, wherein
the channel element is a portion of the substrate, and
the substrate is a semiconductor substrate.

15. The electronic device of claim 13 , further comprising:
a substrate, wherein
the channel element is a channel layer on the substrate, and
the channel layer includes at least one of an oxide semiconductor, a nitride semiconductor, an oxynitride semiconductor, quantum dots, and an organic semiconductor.

16. The electronic device of claim 13 , further comprising:
a source connected to the first side of the channel element; and
a drain connected to the second side of the channel element.

17. The electronic device of claim 1
the ferroelectric crystallization layer includes HfO 2 , La 2 O 3 , Ta 2 O 5 , BaO, or TiO 2 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Heo Jinseong
• Kim Sangwook
• Lee Yunseong
• Jo Sanghyun
• Lee Hyangsook

Classifications

• H10D64/01338

  with a treatment, e.g. annealing, after the formation of the conductor · CPC title

• H01L29/401

  Electricity · mapped topic

• H01L29/516

  Electricity · mapped topic

• H01L29/78391 Primary

  Electricity · mapped topic

• H10D30/0415

  of FETs having ferroelectric gate insulators · CPC title