Moisture governed growth method of atomic layer ribbons and nanoribbons of transition metal dichalcogenides

Patent metadata

Field	Value
Publication number	US-11519068-B2
Application number	US-202117148129-A
Country	US
Kind code	B2
Filing date	Jan 13, 2021
Priority date	Apr 16, 2020
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

First claim

The invention claimed is:

1. A method of making an atomic layer nanoribbon, the method comprising:
forming a double atomic layer ribbon comprising a first monolayer and a second monolayer on a surface of the first monolayer,
wherein forming the double atomic layer ribbon comprises subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the double atomic layer ribbon on a substrate via chemical vapor deposition, and
wherein the first monolayer and the second monolayer each comprises a transition metal dichalcogenide material;

oxidizing at least a portion of the first monolayer to provide an oxidized portion; and
removing the oxidized portion to provide an atomic layer nanoribbon comprising the transition metal dichalcogenide material.

2. The method of claim 1 , wherein the two or more precursor powders comprise a metal oxide powder and a chalcogen powder.

3. The method of claim 2 , wherein the two or more precursor powders further comprise a metal powder and a salt powder.

4. The method according to claim 3 , wherein the metal powder comprises nickel, iron, or a combination thereof.

5. The method of claim 2 , wherein the metal oxide powder comprises molybdenum dioxide and the chalcogen powder comprises sulfur.

6. The method of claim 1 , wherein oxidizing the portion of the first monolayer comprises subjecting the double atomic layer ribbon to a UV-ozone treatment.

7. The method of claim 1 , further comprising oxidizing at least a portion of the second monolayer, wherein the oxidized portion comprises the portion of the first monolayer and the portion of the second monolayer.

8. The method of claim 1 , wherein removing the oxidized portion comprises an etching treatment, the etching treatment comprising subjecting the oxidized portion to an etching agent.

9. The method of claim 1 , wherein the moisturized gas flow comprises a moisture content of between about 100 and 3000 ppm.

10. The method of claim 1 , wherein the moisturized gas flow is provided by flowing a first inert gas flow through a bubbler containing DI water to provide a first moisturized inert gas, and combining the first moisturized inert gas with a second inert gas flow.

11. The method of claim 10 , wherein the first inert gas flow and/or the second inert gas flow has been treated to reduce impurity moisture.

12. The method according to claim 1 , wherein the first monolayer has a first average width and the second monolayer has a second average width that is less than the first average width.

13. The method according to claim 12 , wherein the first average width is between about 0.1 and about 100 μm.

14. The method according to claim 12 , wherein the second average width is between about 5 and 100 nm.

15. The method according to claim 1 , wherein the double atomic layer ribbon comprises a metal-containing nanoparticle at an end of the second monolayer.

Assignees

• Honda Motor Co Ltd

Inventors

• Harutyunyan Avetik R
• Li Xufan

Classifications

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/3248

  consisting of two layers · CPC title