Method of treating a solid layer bonded to a carrier substrate

Patent metadata

Field	Value
Publication number	US-11518066-B2
Application number	US-202017067899-A
Country	US
Kind code	B2
Filing date	Oct 12, 2020
Priority date	Apr 9, 2015
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

First claim

What is claimed is:

1. A method, comprising:
providing a multi-layer assembly comprising a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface comprising a defined surface structure, the defined surface structure produced by a removal of the solid layer, which is effected by a crack, from a donor substrate having the crack, at least in sections of the solid layer;
processing the solid layer, which is arranged on the carrier substrate; and
after the processing, separating the solid layer from the carrier substrate by a destruction of the bonding layer.

2. The method of claim 1 , wherein the solid layer is a semiconductor wafer.

3. The method of claim 1 , wherein separating the solid layer from the carrier substrate by the destruction of the bonding layer comprises:
loading the bonding layer with radiation that disintegrates the bonding layer.

4. The method of claim 3 , wherein the radiation is laser radiation.

5. The method of claim 4 , further comprising:
producing the laser radiation by a femtosecond laser.

6. The method of claim 1 , wherein separating the solid layer from the carrier substrate by the destruction of the bonding layer comprises:
loading the bonding layer with a free-flowing substance that decomposes or dissolves the bonding layer.

7. The method of claim 1 , wherein separating the solid layer from the carrier substrate by the destruction of the bonding layer comprises:
loading the bonding layer with a liquid or a gas that decomposes or dissolves the bonding layer.

8. The method of claim 1 , wherein the carrier substrate comprises a semiconductor material and/or a ceramic material.

9. The method of claim 1 , further comprising:
after separating the solid layer from the carrier substrate, treating the carrier substrate.

10. The method of claim 9 , wherein treating the carrier substrate comprises:
polishing the carrier substrate.

11. The method of claim 9 , further comprising:
after treating the carrier substrate, bonding a further solid layer to the treated carrier substrate by a further bonding layer, the further solid layer having an exposed surface comprising a defined surface structure, the defined surface structure of the further solid layer produced by a removal of the further solid layer, which is effected by another crack, from the donor substrate having the another crack, at least in sections of the further solid layer;
processing the further solid layer, which is arranged on the treated carrier substrate; and
separating the further solid layer from the treated carrier substrate by a destruction of the further bonding layer.

12. The method of claim 1 , further comprising:
using the carrier substrate as a stabilizer during the processing of the solid layer.

13. The method of claim 12 , wherein the carrier substrate has two surfaces which are parallel and flat relative to one another, and wherein the carrier substrate has a thickness of less than 800 μm and/or the solid layer has a thickness of between 10 μm and 150 μm.

14. The method of claim 13 , wherein a total thickness of the carrier substrate with the solid layer bonded thereto is less than 900 μm.

15. The method of claim 13 , wherein the solid layer has a thickness of between 20 μm and 60 μm.

16. The method of claim 1 , wherein in addition to the sections of the solid layer which are formed as a result of the crack in response to the removal from the donor substrate, the surface structure of the exposed surface of the solid layer also has further sections which are structured by modifications produced in an interior of the donor substrate by laser beams.

Assignees

• Siltectra Gmbh

Inventors

• Schilling Franz
• Drescher Wolfram
• Richter Jan

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• B81C1/0038 Primary

  Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373 · CPC title

• B23K26/53

  for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks · CPC title