Method for manufacturing insulating layer for semiconductor package and insulating layer for semiconductor package using the same

Patent metadata

Field	Value
Publication number	US-11515245-B2
Application number	US-201816767872-A
Country	US
Kind code	B2
Filing date	Dec 12, 2018
Priority date	Jan 10, 2018
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

The present invention relates to a method for manufacturing an insulating layer for a semiconductor package which can improve reliability and have excellent heat resistance by removing pores generated in the insulating layer during manufacture of an insulating layer for a semiconductor package using magnetic characteristics, and an insulating layer for a semiconductor package obtained using the method for manufacturing the insulating layer for a semiconductor package.

First claim

The invention claimed is:

1. A method for manufacturing an insulating layer for a semiconductor package comprising the steps of:
a first step of forming, on a circuit board, a thermosetting resin film containing a heat-curable binder resin, a heat curing catalyst, and 30% to 90% by weight of a metal grafting porous structure based on the total weight of the thermosetting resin film; and
a second step of heat curing the thermosetting resin film to prepare the insulating layer on the circuit board,
wherein in at least one of the first step and the second step, a magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film.

2. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein, when the magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film, the metal grafting porous structure contained in the thermosetting resin film has a Moment/Mass measurement value of 0.6 emu/g to 2.0 emu/g as measured using a vibration sample magnetometer.

3. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the thermosetting resin film further includes pores having an average diameter of 1.2 μm or more before the magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film.

4. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the thermosetting resin film includes pores having an average diameter of 1 μm or less after the magnetic field of 0.1 T to 1 T is applied to the thermosetting resin film.

5. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the metal grafting porous structure is a structure having a metal grafted to a molecular sieve containing silicate.

6. The method for manufacturing an insulating layer for a semiconductor package according to claim 5 , wherein the molecular sieve containing silicate includes a zeolite, a silica molecular sieve having fine pores uniformly formed or a mixture thereof.

7. The method for manufacturing an insulating layer for a semiconductor package according to claim 6 , wherein the zeolite is one or more selected from the group consisting of mordenite, ferrierite, ZSM-5, β-zeolite, Ga-silicate, Ti-silicate, Fe-silicate, and Mn-silicate.

8. The method for manufacturing an insulating layer for a semiconductor package according to claim 6 , wherein the silica molecular sieve includes one or more selected from the group consisting of MCM-22, MCM-41, and MCM-48.

9. The method for manufacturing an insulating layer for a semiconductor package according to claim 5 , wherein the metal is one or more selected from the group consisting of nickel, copper, iron, and aluminum.

10. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the metal grafting porous structure includes a structure having a metal grafted to a silica molecular sieve in which fine pores having a diameter of 1 nm to 30 nm are uniformed formed.

11. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the metal grafting porous structure is one or more selected from the group consisting of Ni/MCM-41, Fe/MCM-41, and Cu/MCM-41.

12. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the metal grafting porous structure has a particle diameter of 1 μm or less.

13. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the thermosetting resin film contains 1% to 65% by weight of the heat-curable binder resin, and 0.1% to 20% by weight of the heat curing catalyst based on the total weight of the thermosetting resin film.

14. The method for manufacturing an insulating layer for a semiconductor package according to claim 1 , wherein the heat-curable binder resin is a thermosetting resin containing one or more functional groups selected from the group consisting of an epoxy group, an oxetanyl group, a cyclic ether group, and a cyclic thioether group.

Assignees

• Lg Chemical Ltd

Inventors

• Jeong Minsu
• Kyung You Jin
• Choi Byung Ju
• Jeong Woo Jae
• Lee Kwang Joo
• Cho Eunbyurl

Classifications

• B29C65/02

  by heating, with or without pressure · CPC title

• H10W70/688

  Flexible insulating substrates · CPC title

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10W70/69 Primary

  Insulating materials thereof · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title