Low defect nuclear transmutation doping in nitride-based semiconductor materials

Patent metadata

Field	Value
Publication number	US-11515161-B2
Application number	US-202016852186-A
Country	US
Kind code	B2
Filing date	Apr 17, 2020
Priority date	Apr 19, 2019
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

Doped nitride-based semiconductor materials and methods of producing these materials are described herein.

First claim

What is claimed is:

1. A method for producing a doped nitride-based semiconductor material comprising:
emitting an initial stream of neutron irradiation comprising thermal flux, epithermal flux, and fast neutron flux toward a nitride-based semiconductor workpiece in a nuclear reactor;
reducing a density of fast neutron flux and/or thermal neutron flux in the initial stream of neutron irradiation to produce a modulated stream of neutron irradiation, wherein the modulated stream of neutron irradiation has:
a ratio of epithermal flux density to fast neutron flux density that is greater than a ratio of epithermal flux density to fast neutron flux density in the initial stream of neutron irradiation and/or
a ratio of epithermal flux density to thermal neutron flux density that is greater than a ratio of epithermal flux density to thermal neutron flux density in the initial stream of neutron irradiation; and

bombarding the workpiece with the modulated stream of neutron irradiation to effect transmuting a proportion of a first element in the workpiece to a second element to produce the doped nitride-based semiconductor material.

2. The method of claim 1 , wherein a neutron absorber material is introduced to the nuclear reactor to reduce the density of the fast neutron flux and/or thermal neutron flux in the initial stream of neutron irradiation.

3. The method of claim 2 , wherein the neutron absorber material comprises at least one element selected from the group consisting of boron, titanium, cobalt, molybdenum, cadmium, indium, hafnium, samarium, europium, gadolinium, dysprosium, erbium, ytterbium, and combinations thereof.

4. The method of claim 2 , wherein the neutron absorber material comprises at least one element selected from the group consisting of boron, cadmium, hafnium, and combinations thereof.

5. The method of claim 2 , wherein the workpiece is held in a container comprising the neutron absorber material.

6. The method of claim 1 , comprising reducing the density of thermal neutron flux in the initial stream of neutron irradiation.

7. A method for producing a doped nitride-based semiconductor material comprising:
bombarding a nitride-based semiconductor workpiece with a stream of neutron irradiation in a nuclear reactor to effect transmuting a proportion of a first element in the workpiece to a second element to produce the doped nitride-based semiconductor material, wherein the neutron irradiation comprises a thermal flux, epithermal flux, and fast neutron flux; and wherein the stream of neutron irradiation reaching the workpiece has a ratio of epithermal neutron flux density to fast neutron flux density that is about 1:1000 or greater.

8. The method of claim 1 , further comprising positioning the workpiece in a zone of a nuclear reactor that has a preferentially greater ratio of epithermal flux density to fast neutron flux density based on a map of relative flux densities in the reactor.

9. A method for producing a doped nitride-based semiconductor material comprising:
positioning a nitride-based semiconductor workpiece in a zone of a nuclear reactor that has a preferentially greater ratio of an epithermal flux density to a fast neutron flux density based on a map of relative flux densities in the reactor; and
bombarding the workpiece with a stream of neutron irradiation in the zone of the nuclear reactor to effect transmuting a proportion of a first element in the workpiece to a second element to produce the doped nitride-based semiconductor material.

10. The method of claim 9 , further comprising reducing a density of thermal neutron flux in the stream of neutron irradiation.

11. The method of claim 9 , wherein a neutron absorber material is introduced to the nuclear reactor to reduce the density of the thermal neutron flux and/or thermal neutron flux in the stream of neutron irradiation.

12. The method of claim 11 , wherein the neutron absorber material comprises at least one element selected from the group consisting of boron, titanium, cobalt, molybdenum, cadmium, indium, hafnium, samarium, europium, gadolinium, dysprosium, erbium, ytterbium, and combinations thereof.

13. The method of claim 11 , wherein the neutron absorber material comprises at least one element selected from the group consisting of boron, cadmium, hafnium, and combinations thereof.

14. The method of claim 11 , wherein the workpiece is held in a container comprising the neutron absorber material.

15. The method of claim 1 , wherein the transmuting comprises transmuting a quantity of 14 N to 14 C.

16. The method of claim 1 , wherein the workpiece comprises at least one metal selected from the group consisting of Al, Ga, In, and combinations thereof.

17. The method of claim 1 , wherein the workpiece comprises Ga.

18. The method of claim 1 , wherein the transmuting comprises transmuting a quantity of Ga to Ge.

19. The method of claim 1 , further comprising annealing the doped nitride-based semiconductor material.

Assignees

• Univ Missouri

Inventors

• Kwon Jae Wan
• Gahl John
• Brockman John

Classifications

• H10P34/20 Primary

  for inducing a nuclear reaction transmuting chemical elements · CPC title

• H01L29/207

  Electricity · mapped topic

• H01L21/261 Primary

  Electricity · mapped topic

• H01L29/2003

  Electricity · mapped topic

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title