Compound semiconductor devices with a conductive component to control electrical characteristics
US-2024097016-A1 · Mar 21, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/207 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 675 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 48 |
| 2016 | 99 |
| 2017 | 106 |
| 2018 | 78 |
| 2019 | 83 |
| 2020 | 67 |
| 2021 | 62 |
| 2022 | 45 |
| 2023 | 36 |
| 2024 | 41 |
| 2025 | 10 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Schottky barrier diode
US-2016372609-A1 · Dec 22, 2016 · US
Gallium arsenide based materials used in thin film transistor applications
US-2016322509-A1 · Nov 3, 2016 · US
Method of manufacturing a semiconductor device
US-9478632-B2 · Oct 25, 2016 · US
Selective dopant junction for a group iii-v semiconductor device
US-2016254150-A1 · Sep 1, 2016 · US
FinFET fabrication method using buffer layers between channel and semiconductor substrate
US-9425101-B2 · Aug 23, 2016 · US
High electron mobility transistor
US-2016211330-A1 · Jul 21, 2016 · US
Iii-v nanowire fet with compositionally-graded channel and wide-bandgap core
US-2016197154-A1 · Jul 7, 2016 · US
Semiconductor wafer and method of producing semiconductor wafer
US-2016149000-A1 · May 26, 2016 · US
Carbon doping semiconductor devices
US-2016126342-A1 · May 5, 2016 · US
Pseudo-substrate for use in the production of semiconductor components and method for producing a pseudo-substrate
US-9263248-B2 · Feb 16, 2016 · US
Field effect transistor
US-9263530-B2 · Feb 16, 2016 · US
Group III-V Device with a Selectively Modified Impurity Concentration
US-2015380497-A1 · Dec 31, 2015 · US
Method for producing a semiconductor device, and semiconductor device produced thereby
US-2015380498-A1 · Dec 31, 2015 · US
Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method
US-9219123-B2 · Dec 22, 2015 · US
Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template
US-2015357416-A1 · Dec 10, 2015 · US
Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
US-9196614-B2 · Nov 24, 2015 · US
Semiconductor Device and Method
US-2015333166-A1 · Nov 19, 2015 · US
A high electron mobility device based on the gate-first process and the production method thereof
US-2015333141-A1 · Nov 19, 2015 · US
Semiconductor substrate and method for manufacturing same
US-2015332918-A1 · Nov 19, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/207?
- CPC H01L29/207 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/207 (Electricity)?
- Our database includes 675 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/207 growing?
- Publication counts under this code: 41 in 2024 vs 10 in 2025 (latest complete years).