Multilayer structure, method for manufacturing same, semiconductor device, and crystalline film
US-2017278706-A1 · Sep 28, 2017 · US
Method of forming gallium oxide film
US11515146B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11515146-B2 |
| Application number | US-201916697273-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 27, 2019 |
| Priority date | Dec 17, 2018 |
| Publication date | Nov 29, 2022 |
| Grant date | Nov 29, 2022 |
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- Title
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Abstract
Official abstract text for this publication.
A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and equal to or less than 4.5 times a molar concentration of gallium in the material solution.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a gallium oxide film, the method comprising dissolving gallium oxyhydroxide in hydrochloric acid to create a material solution comprising gallium atoms and chlorine atoms, supplying a mist of the material solution to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, wherein a molar concentration of chlorine in the material solution is 3.0 times to 4.5 times a molar concentration of gallium in the material solution. 2. The method of claim 1 , wherein the molar concentration of chlorine in the material solution is equal to or less than 3.5 times the molar concentration of gallium in the material solution. 3. The method of claim 1 , wherein the substrate is constituted of β-gallium oxide. 4. The method of claim 1 , further comprising dissolving gallium chloride in water so as to create the material solution. 5. The method of claim 4 , wherein the creation of the material solution comprises mixing hydrochloric acid with the water. 6. The method of claim 1 , further comprising dissolving gallium in hydrochloric acid so as to create the material solution. 7. The method of claim 1 , further comprising dissolving gallium hydroxide in hydrochloric acid so as to create the material solution.
Assignees
Inventors
Classifications
Oxides · CPC title
the materials being characterised by the deposition precursor materials · CPC title
- H10P14/6939Primary
characterised by the metal · CPC title
using solutions · CPC title
- H10P14/3434Primary
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
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- What does patent US11515146B2 cover?
- A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and e…
- Who is the assignee on this patent?
- Nagaoka Tatsuji, Nishinaka Hiroyuki, Yoshimoto Masahiro, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6939. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 29 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).