Method of manufacturing an electrochemical cell

Patent metadata

Field	Value
Publication number	US-11502287-B2
Application number	US-201816131884-A
Country	US
Kind code	B2
Filing date	Sep 14, 2018
Priority date	Jan 4, 2018
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

In a method of manufacturing an electrochemical cell, a porous or non-porous metal substrate may be provided. A precursor solution may be applied to a surface of the metal substrate. The precursor solution may comprise a chalcogen donor compound dissolved in a solvent. The precursor solution may be applied to the surface of the metal substrate such that the chalcogen donor compound reacts with the metal substrate and forms a conformal metal chalcogenide layer on the surface of the metal substrate. A conformal lithium metal layer may be formed on the surface of the metal substrate over the metal chalcogenide layer.

First claim

What is claimed is:

1. A method of manufacturing an electrochemical cell, the method comprising:
providing a porous or non-porous metal substrate;
providing a precursor solution including a chalcogen donor compound dissolved in a solvent;
applying the precursor solution to a surface of the metal substrate such that the chalcogen donor compound reacts with the metal substrate and forms a conformal metal chalcogenide layer directly on the surface of the metal substrate; and
forming a conformal lithium metal layer directly on the metal chalcogenide layer over the surface of the metal substrate,
wherein the conformal metal chalcogenide layer is an intermediate layer that extends continuously between the surface of the metal substrate and the conformal lithium metal layer.

2. The method of claim 1 wherein the chalcogen donor compound comprises an oxygen donor compound, and wherein the conformal metal chalcogenide layer comprises a metal oxide.

3. The method of claim 2 wherein the oxygen donor compound comprises at least one of a metal oxo complex, a nitroxide, a phosphine oxide, a peroxide, a superoxide, or a metal salt including an oxyanion.

4. The method of claim 2 wherein the oxygen donor compound comprises at least one of sodium hypochlorite, (2,2,6,6-tetramethylpiperidin-1-yl)oxyl, triphenylphosphine oxide, benzoyl peroxide, or potassium dichromate.

5. The method of claim 1 wherein the chalcogen donor compound comprises a sulfur donor compound, and wherein the conformal metal chalcogenide layer comprises a metal sulfide.

6. The method of claim 5 wherein the sulfur donor compound comprises at least one of 2,2,6,6-tetramethylpiperidin-1-ylthiyl (TEMPS), an organic polysulfide, or an inorganic polysulfide.

7. The method of claim 1 wherein the chalcogen donor compound comprises a selenium donor compound, and wherein the conformal metal chalcogenide layer comprises a metal selenide.

8. The method of claim 7 wherein the selenium donor compound comprises at least one of an organic polyselenide or an inorganic polyselenide.

9. The method of claim 1 wherein the precursor solution is applied to the surface of the metal substrate by spraying or coating the precursor solution onto the surface of the metal substrate, or by at least partially immersing the metal substrate in the precursor solution.

10. The method of claim 1 wherein the metal chalcogenide layer is substantially uniform, and wherein the metal chalcogenide layer has a thickness in the range of one nanometer to 10 micrometers.

11. The method of claim 1 wherein the metal substrate comprises a non-porous metal foil, a perforated metal sheet, or a porous metal mesh.

12. The method of claim 11 wherein the metal substrate has a thickness in the range of 8 μm 20 μm.

13. The method of claim 1 wherein the metal substrate is porous and includes a first side, an opposite second side, and a plurality of pores defined by wall surfaces extending between the first and second sides of the metal substrate, and wherein the precursor solution is applied to the metal substrate such that the metal chalcogenide layer forms on the first and second sides of the metal substrate and on the wall surfaces extending between the first and second sides of the metal substrate, without blocking the pores of the metal substrate.

14. The method of claim 13 wherein the metal substrate has a thickness in the range of 50 μm to 150 μm.

15. The method of claim 1 wherein the metal substrate comprises copper, and wherein the metal chalcogenide layer comprises copper oxide, copper sulfide, copper selenide, or a combination thereof.

16. The method of claim 1 wherein the lithium metal layer is formed on the surface of the metal substrate over the metal chalcogenide layer by contacting the metal chalcogenide layer with a source of gaseous or molten lithium such that the lithium actively wets the metal chalcogenide layer and is uniformly and continuously distributed over the surface of the metal substrate.

17. The method of claim 1 wherein the lithium metal layer is formed on the surface of the metal substrate over the metal chalcogenide layer using an electrochemical deposition process, wherein the metal substrate is at least partially immersed in a nonaqueous liquid electrolyte solution including a lithium salt dissolved in a polar aprotic organic solvent, and then establishing an electrical potential between the metal substrate and a counter electrode immersed in the nonaqueous liquid electrolyte solution such that lithium ions in the electrolyte solution are reduced to metallic lithium and deposited on the surface of the metal substrate over the metal chalcogenide layer.

18. The method of claim 1 wherein the conformal lithium metal layer consists essentially of lithium and comprises, by weight, greater than 97% lithium.

Assignees

• Gm Global Tech Operations Llc

Inventors

• Dai Fang
• Chen Shuru
• He Meinan
• Cai Mei

Classifications

• H01M4/134

  Electrodes based on metals, Si or alloys · CPC title

• H01M4/0419

  involving spraying · CPC title

• H01M10/052 Primary

  Li-accumulators · CPC title

• H01M4/80

  Porous plates, e.g. sintered carriers · CPC title

• H01M10/0585

  of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators · CPC title