Optoelectronic semiconductor chip based on a phosphide compound semiconductor material

Patent metadata

Field	Value
Publication number	US-11502222-B2
Application number	US-201816480111-A
Country	US
Kind code	B2
Filing date	Jan 23, 2018
Priority date	Jan 27, 2017
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*1019 cm−3, and the p-contact layer is less than 100 nm thick.

First claim

The invention claimed is:

1. An optoelectronic semiconductor chip comprising:
a semiconductor layer sequence comprising a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region,
a current spreading layer comprising a transparent conductive oxide adjoining the p-type semiconductor region, and
a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein
the p-type semiconductor region comprises a p-contact layer adjoining the current spreading layer,
the p-contact layer comprises GaP doped with C,
a C dopant concentration in the p-contact layer is at least 1 * 10 20 cm −3 ,
the p-contact layer has a thickness of less than 35 nm,
an intermediate layer comprising GaP doped with C is arranged on a side of the p-contact layer remote from the current spreading layer, the intermediate layer having a lower dopant concentration than the p-contact layer, and
the active layer includes at least one layer comprising In x Ga y Al 1-x-y P with 0≤x≤1, 0≤y≤1 and x+y≤1.

2. The optoelectronic semiconductor chip according to claim 1 , wherein the p-contact layer has a thickness of 1 nm to 100 nm.

3. The optoelectronic semiconductor chip according to claim 1 , wherein the p-contact layer has a thickness of less than 50 nm.

4. The optoelectronic semiconductor chip according to claim 1 , wherein the current spreading layer and the p-contact layer are regionally interrupted.

5. The optoelectronic semiconductor chip according to claim 4 , wherein the optoelectronic semiconductor chip has an n-connection layer, and the current spreading layer and the p-contact layer are interrupted in a region opposite the n-connection layer.

6. The optoelectronic semiconductor chip according to claim 1 , wherein the p-contact layer has an rms surface roughness of less than 2 nm.

7. The optoelectronic semiconductor chip according to claim 1 , wherein a p-doped InA1GaP layer is arranged on a side of the p-contact layer remote from the current spreading layer.

8. The optoelectronic semiconductor chip according to claim 1 , wherein the current spreading layer comprises ITO, ZnO or IZO.

9. The optoelectronic semiconductor chip according to claim 1 , wherein the current spreading layer has a thickness of 10 nm to 300 nm.

10. The optoelectronic semiconductor chip according to claim 1 , wherein the n-type semiconductor region faces a radiation exit surface of the optoelectronic semiconductor chip, and the p-type semiconductor region faces a carrier substrate of the optoelectronic semiconductor chip.

11. The optoelectronic semiconductor chip according to claim 1 , wherein the p-connection layer comprises gold or silver.

12. The optoelectronic semiconductor chip according to claim 1 , wherein a superlattice comprising alternating first layers and second layers is arranged on a side of the p-contact layer remote from the current spreading layer.

13. The optoelectronic semiconductor chip according to claim 12 , wherein the superlattice is a periodic layer sequence comprising N periods, and the number of periods N of the superlattice is more than 3.

14. The optoelectronic semiconductor chip according to claim 12 , wherein the first layers and the second layers of the superlattice are 5 nm to 200 nm thick.

15. The optoelectronic semiconductor chip according to claim 1 , wherein a dielectric layer is arranged regionally between the current spreading layer and the p-connection layer, and the p-connection layer connects to the current spreading layer through one or more openings in the dielectric layer.

16. The optoelectronic semiconductor chip according to claim 1 , wherein the intermediate layer has a dopant concentration of more than 1 * 10 19 cm −3 .

17. The optoelectronic semiconductor chip according to claim 1 , wherein the intermediate layer is 10 nm to 200 nm thick.

18. The optoelectronic semiconductor chip according to claim 1 , wherein the p-contact layer has an rms surface roughness of less than 2 nm, and
wherein a p-doped InAlGaP layer is arranged on a side of the p-contact layer remote from the current spreading layer.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Wang Xue
• Broell Markus

Classifications

• H10P95/92

  Formation of n- or p-type semiconductors, e.g. doping of graphene · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H01L33/14 Primary

  Electricity · mapped topic

• H01L21/041

  Electricity · mapped topic

• H01L21/02115

  Electricity · mapped topic