Electrode, an electronic device, and a method for manufacturing an optoelectronic device

Patent metadata

Field	Value
Publication number	US-10044005-B2
Application number	US-201615207570-A
Country	US
Kind code	B2
Filing date	Jul 12, 2016
Priority date	May 13, 2013
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

According to various embodiments, an electrode may include at least one layer including a chemical compound including aluminum and titanium.

First claim

What is claimed is:

1. A method for manufacturing an optoelectronic device, the method comprising:
forming an electrode layer stack, the electrode layer stack comprising at least a titanium layer and an aluminum layer;
annealing the electrode layer stack such that a chemical compound is formed from the aluminum of the aluminum layer and the titanium of the titanium layer; and
forming an optoelectronic structure over the electrode layer stack, wherein the optoelectronic structure is electrically conductively coupled to the annealed electrode layer stack,
wherein forming the electrode layer stack further comprises forming a titanium nitride layer directly on the titanium layer.

2. The method according to claim 1 ,
wherein forming the electrode layer stack comprises:
forming a first titanium layer;
forming an aluminum layer over the first titanium layer; and
forming a second titanium layer over the aluminum layer.

3. The method according to claim 2 ,
wherein forming the electrode layer stack further comprises forming a titanium nitride layer directly on the second titanium layer.

4. The method according to claim 1 ,
wherein forming the electrode layer stack further comprises forming a top layer over the titanium layer and the aluminum layer.

5. The method according to claim 4 ,
wherein the top layer comprises at least one of tantalum and titanium nitride.

6. The method according to claim 4 ,
wherein the top layer provides an upper surface of the electrode layer stack.

7. The method according to claim 1 ,
wherein the optoelectronic structure is configured as an optoelectronic device selected from a group of optoelectronic devices consisting of:
a light emitting device;
a photovoltaic cell; and
an optoelectronic sensor.

8. The method according to claim 1 ,
wherein the optoelectronic structure comprises at least one light emitting diode.

9. The electronic device according to claim 8 ,
wherein the at least one light emitting diode is configured as an organic light emitting diode.

10. The method according to claim 1 , further comprising:
forming an electronic circuit, wherein the electronic circuit is electrically coupled with the annealed electrode layer stack.

11. The method according to claim 10 ,
wherein the electrode layer stack is formed to reflect light emitted by the optoelectronic structure.

12. A method for manufacturing an electrode, the method comprising:
forming an electrode layer stack, the electrode layer stack comprising at least one titanium layer and at least one aluminum layer; subsequently
annealing the electrode layer stack such that a chemical compound is formed from the aluminum of the at least one aluminum layer and the titanium of the at least one titanium layer,
wherein forming the electrode layer stack comprises forming a bottom layer comprising at least one of tantalum and titanium nitride.

13. The method according to claim 12 ,
wherein forming the electrode layer stack comprises:
forming a first titanium layer;
forming an aluminum layer over the first titanium layer; and
forming a second titanium layer over the aluminum layer.

14. The method according to claim 13 , further comprising:
wherein forming the electrode layer stack further comprises forming a titanium nitride layer directly on the second titanium layer.

15. A method for manufacturing an electrode, the method comprising:
forming a bottom layer, the bottom layer comprising at least one of tantalum and titanium nitride;
forming at least one layer of the bottom layer, the at least one layer comprising aluminum and titanium;
forming a top layer over the at least one layer, the top layer comprising at least one of tantalum and titanium nitride; and subsequently
annealing the at least one layer such that a chemical compound is formed from the aluminum and the titanium of the at least one layer.

16. A method for manufacturing an electrode, the method comprising:
forming an electrode layer stack, the electrode layer stack comprising at least one titanium layer and at least one aluminum layer; subsequently
annealing the electrode layer stack such that a chemical compound is formed from the aluminum of the at least one aluminum layer and the titanium of the at least one titanium layer,
wherein forming the electrode layer stack comprises forming a top layer comprising at least one of tantalum and titanium nitride.

17. The method according to claim 16 ,
wherein the top layer provides an upper surface of the electrode layer stack.

Assignees

• Infineon Technologies Dresden Gmbh

Inventors

• Meinhold Dirk
• Schmidbauer Sven
• Fischer Markus
• Urbansky Norbert

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• Y10T428/31678

  Of metal · CPC title

• Y10T428/12993

  Surface feature [e.g., rough, mirror] · CPC title

• H01L29/401

  Electricity · mapped topic

• H01L2933/0016

  Electricity · mapped topic