Selective reference voltage calibration in memory subsystem

Patent metadata

Field	Value
Publication number	US-11501820-B2
Application number	US-202117181979-A
Country	US
Kind code	B2
Filing date	Feb 22, 2021
Priority date	Feb 22, 2021
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

A method and apparatus for selective reference voltage calibration in a memory subsystem is disclosed. A memory subsystem includes a memory coupled to a memory controller. The memory controller may operate in one of a number of different performance states. The memory controller further includes a calibration circuit configured to perform reference voltage calibrations for the various ones of the performance states to determine corresponding reference voltages. For a performance state change from an initial performance state to a final performance state, via an intermediate performance state, the memory controller is configured to transition to the intermediate performance state without causing the calibration circuit to perform a reference voltage calibration in that state. Thereafter, the memory controller transitions to the final performance state.

First claim

What is claimed is:

1. An apparatus comprising:
a memory; and
a memory controller coupled to the memory, wherein the memory controller is configured to operate in a plurality of performance states that includes initial, final, and intermediate performance states and wherein the memory controller includes a calibration circuit configured to perform initial reference voltage calibrations to determine a corresponding reference voltage for ones of the plurality of performance states;
wherein the memory controller is configured to transition from the initial performance state to the final performance state via the intermediate performance state without causing the calibration circuit to perform a reference voltage calibration prior to beginning operation in the intermediate performance state, and further configured to cause performing of a segmented reference voltage calibration, subsequent to beginning operation in the intermediate performance state, using one or more input/output settings of the final performance state.

2. The apparatus of claim 1 , wherein during a given reference voltage calibration, the calibration circuit is configured to:
perform a first calibration at a first reference voltage value;
increment the reference voltage to a second reference voltage value greater than the first reference voltage value;
perform a second calibration at the second reference voltage value; and
discontinue incrementing the reference voltage and inhibit performing additional calibrations at reference voltage values greater than the first reference voltage in response to determining that a width of an eye pattern at which valid data is read during the second calibration is less than or equal to a width of the eye pattern at which valid data is read during the first calibration.

3. The apparatus of claim 2 , wherein the calibration circuit is further configured to:
decrement the reference voltage to a third reference voltage value less than the first reference voltage value;
perform a third calibration at the third reference voltage value; and
discontinue decrementing and inhibit performing additional calibrations at reference voltage values less than the first reference voltage in response to determining that a width of the eye pattern at which valid data is read during the third calibration is less than or equal to a width of the eye pattern at which valid data is read during the first calibration.

4. The apparatus of claim 2 , wherein the first reference voltage value is a most recent previously calibrated reference voltage value.

5. The apparatus of claim 1 , wherein ones of the plurality of performance states are defined by a clock frequency.

6. The apparatus of claim 1 , wherein ones of the plurality of performance states are defined by a supply voltage at which the memory and the memory controller operate.

7. The apparatus of claim 1 , wherein performing the segmented reference voltage calibration comprises performing calibration segments in which memory traffic is blocked alternating with periods in which memory traffic is not blocked.

8. The apparatus of claim 7 , wherein the memory controller is configured to transition to the final performance state in response to the calibration circuit completing the segmented reference voltage calibration, and is further configured to begin performing data transfers with the memory without first performing a reference voltage calibration in the final performance state.

9. The apparatus of claim 1 , wherein the calibration circuit is configured to perform periodic reference voltage calibrations when operating in ones of the plurality of performance states.

10. A method comprising:
performing, in a memory subsystem having a memory controller and a memory, initial reference voltage calibrations to determine a reference voltage for ones of a plurality of performance states, wherein performing initial reference voltage calibrations comprises calibrating a data strobe signal at a plurality of different reference voltage values;
transitioning from operation in an initial performance state to a final performance state, wherein the transitioning includes a transition into an intermediate performance state prior to transitioning into the final performance state;
beginning operating in the intermediate performance state without performing a reference voltage calibration; and
performing a segmented reference voltage calibration, subsequent to beginning operation in the intermediate performance state, using one or more input/output settings of the final performance state.

11. The method of claim 10 , wherein transitioning from the initial performance state to the intermediate performance state comprises changing a clock frequency from a first value to a second value, and wherein transitioning from the intermediate performance state comprises changing the clock frequency from the second value to a third value.

12. The method of claim 10 , wherein performing the segmented reference voltage calibration comprises performing calibration segments in which memory traffic is blocked alternating with periods in which memory traffic is not blocked, and wherein the method further comprises:
transitioning to the final performance state in response to completing the segmented reference voltage calibration; and
beginning operations, including processing memory requests from agents external to the memory subsystem, in the final performance state without first performing a reference voltage calibration.

13. The method of claim 10 , further comprising:
performing a current calibration at a first value of the reference voltage, wherein the first value of the reference voltage is a reference voltage determined from a most recent prior calibration; and
terminating the current calibration in response to determining that a width of an eye pattern at the first value is greater than or equal to the width of the eye pattern determined during the most recent prior calibration.

14. The method of claim 13 , further comprising:
adjusting the reference voltage, in a first direction from the first value to a second value, in response to determining that the width of the eye pattern at the first reference voltage is less than the width of the eye pattern determined during the most recent prior calibration;
continuing the current calibration at the second value; and
discontinuing performing additional adjustments of the reference voltage in the first direction in response to determining that the width of an eye pattern at the second value is less than or equal to the width of the eye pattern at the first value.

15. The method of claim 14 , further comprising:
adjusting the reference voltage, in a second direction from the first value, to a third value;
continuing the current calibration at the third value; and
discontinuing performing additional adjustments of the reference voltage in the second direction in response to determining that the width of the eye pattern at the third value is less than the width of the eye pattern at the first value.

16. The method of claim 10 , wherein performing a reference voltage calibration comprises:
performing writes of data to the memory at a selected reference voltage and at a plurality of different delay values applied to a data strobe signal;
performing reads of data from the memory at the selected reference voltage and the ones of the plurality of different delay values;
compare data written to the memory to data read from the memory; and
determining a width of an eye pattern at the selected reference voltage based on the plurality o

Assignees

• Apple Inc

Inventors

• Jeter Robert E
• Hsiung Kai Lun
• Notani Rakesh L
• Malladi Venkata Ramana
• Kelm John H
• Kim Taehyun

Classifications

• G11C29/028

  with adaption or trimming of parameters · CPC title

• G11C29/022

  in I/O circuitry · CPC title

• G11C29/16

  using microprogrammed units, e.g. state machines · CPC title

• G11C11/4074 Primary

  Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits · CPC title

• G11C29/021 Primary

  in voltage or current generators · CPC title