Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane

Patent metadata

Field	Value
Publication number	US-11499014-B2
Application number	US-201916731728-A
Country	US
Kind code	B2
Filing date	Dec 31, 2019
Priority date	Dec 31, 2019
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

First claim

What is claimed is:

1. A reaction mixture for producing a film forming polycarbosilazane polymer or oligomer, the reaction mixture comprising carbosilanes and amines,
wherein the carbosilanes contain at least two —SiH 2 — moieties, either as terminal groups (—SiH 2 R) or embedded in a carbosilane cyclic compound, wherein R is H, a C 1 to C 6 linear, branched, or cyclic alkyl- group, a C 1 to C 6 linear, branched, or cyclic alkenyl-group, or combination thereof, and
wherein the reaction mixture is capable of forming the film forming polycarbosilazane polymer or oligomer,
wherein the reaction mixture further comprises a polysilane that contains more than two —SiH 2 R function groups, wherein R is H, a C 1 to C 6 linear, branched, or cyclic alkyl- group, a C 1 to C 6 linear, branched, or cyclic alkenyl-group, or a combination thereof.

2. The reaction mixture of claim 1 , wherein the film forming polycarbosilazane polymer or oligomer has a backbone that comprises Si—N units, Si—N—C n —N—Si units, Si—N—Si units or combinations thereof, wherein n≥1, wherein the backbone includes cross-linked Si—N units, Si—N—C n —N—Si units, or Si—N—Si units, branched Si—N units, Si—N—C n —N—Si units, or Si—N—Si units, or combinations thereof.

3. The reaction mixture of claim 1 , wherein the carbosilane has the formula:
R 1 a Si[—(CH 2 ) b —SiH 2 R 2 ] c   (I)

wherein R 1 , R 2 are independently H, a C 1 to C 6 linear, branched or cyclic alkyl- group, a C 1 to C 6 linear, branched or cyclic alkenyl-group, or combination thereof; a=0 to 2; b=1 to 4; c=4-a; or
R 3 e C[—(CH 2 ) f —SiH 2 R 4 ] g   (II)

wherein R 3 , R 4 are independently H, a C 1 to C 6 linear, branched or cyclic alkyl- group, a C 1 to C 6 linear, branched or cyclic alkenyl-group, or combination thereof; e=0 to 2; f=0 to 3; g=4-e; or
[scaffold]-[—(CH 2 ) m —SiH 2 R 5 ] n   (III)

wherein R 5 is H, a C 1 to C 6 linear, branched, or cyclic alkyl- group, a C 1 to C 6 linear, branched or cyclic alkenyl-group, or combination thereof; m=0 to 4; n=2 to 4; and the scaffold is a hydrocarbon scaffold; or
R 6 x -1,3,5-trisilacyclohexane  (IV)

wherein R 6 is a C 1 to C 6 linear, branched or cyclic alkyl- or alkenyl-group; x=0 to 3.

4. The reaction mixture of claim 3 , wherein the hydrocarbon scaffold is a hydrocarbon scaffold including a C 3 to C 10 cyclic hydrocarbon scaffold containing silyl- group, —NH group, —O— ether group.

5. The reaction mixture of claim 1 , wherein the carbosilane contains Si—C n —Si unit (n≥1) unit(s) or a 1,3,5-trisilacyclohexane (TSCH) backbone.

6. The reaction mixture of claim 1 , wherein the carbosilane is selected from the group consisting of Si[—(CH 2 )—SiH 3 ] 4 , Si[—(CH 2 ) 2 —SiH 3 ] 4 , Si[—(CH 2 ) 3 —SiH 3 ] 4 , and Si[—(CH 2 ) 4 —SiH 3 ] 4 , R 1 Si[—(CH 2 )—SiH 3 ] 3 , R 1 Si[—(CH 2 ) 2 —SiH 3 ] 3 , R 1 Si[—(CH 2 ) 3 —SiH 3 ] 3 , and R 1 Si[—(CH 2 ) 4 —SiH 3 ] 3 , H 3 Si—CH 2 —SiH 2 —CH 2 —SiH 3 (bis(silylmethyl)silane), H 3 Si—(CH 2 ) 2 —SiH 2 —(CH 2 ) 2 —SiH 3 (bis(2-silylethyl)silane), H 3 Si—(CH 2 ) 3 —SiH 2 —(CH 2 ) 3 —SiH 3 (bis(3-silylpropyl)silane), and H 3 Si—(CH 2 ) 4 —SiH 2 —(CH 2 ) 4 —SiH 3 (bis(4-silylbutyl)silane), C[—SiH 3 ] 4 (tetrasilylmethane), C[—(CH 2 )—SiH 3 ] 4 (2,2-bis(silylmethyl)propane-1,3-diyl)bis(silane)), C[—(CH 2 ) 2 —SiH 3 ] 4 (3,3-bis(2-silylethyl)pentane-1,5-diyl)bis(silane)), and C[—(CH 2 ) 3 —SiH 3 ] 4 (4,4-bis(3-silylpropyl)heptane-1,7-diyl)bis(silane)), R 1 C[—SiH 3 ] 3 , R 1 C[—(CH 2 )—SiH 3 ] 3 , R 1 C[—(CH 2 ) 2 —SiH 3 ] 3 , and R 1 C[—(CH 2 ) 3 —SiH 3 ] 3 , H 3 Si—CH 2 —SiH 3 (bisilylmethane), H 3 Si—(CH 2 ) 5 —SiH 3 (1,5-disilylpentane)), and H 3 Si—(CH 2 ) 7 —SiH 3 (1,7-disilylheptane)), 1,3-disilylcyclopentane, 1,2-disilylcyclopentane, 1,4-disilylcyclohexane, 1,3-disilylcyclohexane, 1,2-disilylcyclohexane, 1,3,5-trisilylcyclohexane and 1,3,5-trisilylbenzene, 2-Me-TSCH, 2-Et-TSCH, 2-iPr-TSCH, 2-nPr-TSCH, 2-nBu-TSCH, 2-tBu-TSCH, 2-sBu-TSCH, 2-iBu-TSCH, 2,4-Me 2 -TSCH, 2,4-Et 2 -TSCH, 2,4-iPr 2 -TSCH, 2,4-nPr 2 -TSCH, 2,4-nBu 2 -TSCH, 2,4-iBu 2 -TSCH, 2,4-tBu 2 -TSCH, 2,4-sBu 2 -TSCH, 2,4,6-Me 3 -TSCH, 2,4,6-Et 3 -TSCH, 2,4,6-iPr 3 -TSCH, 2,4,6-nPr 3 -TSCH, 2,4,6-nBu 3 -TSCH, 2,4,6-iBu 3 -TSCH, 2,4,6-tBu 3 -TSCH, 2,4,6-sBu 3 -TSCH, and combinations thereof, wherein R 1 is H, a C 1 -C 6 linear, branched, or cyclic alkyl- group, a C 1 -C 6 linear, branched, or cyclic alkenyl-group, or combinations thereof.

7. The reaction mixture of claim 1 , wherein the carbosilane is 1,3,5-trisilapentane (CAS No.: 5637-99-0) or 1,3,5-trisilacyclohexane (CAS No.: 291-27-0).

8. The reaction mixture of claim 1 , wherein the amine is selected from one or more of ammonia, amidine, hydrazine, hydroxylamine, monoalkylamine, diamines including ethylene diamine, or polyamines, which polyamines contain at least two N—H bonds either on the same nitrogen atom or on separate nitrogen atoms.

9. The reaction mixture of claim 1 , wherein the polysilane is selected from one or more of neopentasilane (Si(SiH 3 ) 4 ), n-tetrasilane (SiH 3 (SiH 2 ) 2 SiH 3 ), 2-silyl-tetrasilane ((SiH 3 ) 2 SiHSiH 2 SiH 3 ), trisilylamine (N(SiH 3 ) 3 ), or trisilyamine derivatives.

10. A method of forming a silicon and carbon containing film on a substrate, the method comprising the steps of:
producing a film forming polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines;
forming a solution containing the film forming polycarbosilazane polymer or oligomer; and
contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film,
wherein the carbosilanes contain at least two —SiH 2 — moieties, either as terminal groups (—SiH 2 R) or embedded in a carbosilane cyclic compound, wherein R is H, a C 1 to C 6 linear, branched, or cyclic alkyl-group, a C 1 to C 6 linear, branched, or cyclic alkenyl-group, or a combination thereof,
wherein the step of the producing the film forming polycarbosilazane polymer or oligomer comprises the step of adding a polysilane that contains more than two —SiH 2 R function groups to the reaction mixture for enhancing the polymerization of the carbosilanes with amines, wherein R is H, a C 1 to C 6 linear, branched, or cyclic alkyl- group, a C 1 to C 6 linear, branched, or cyclic alkenyl-group, or a combination thereof.

11. The method of claim 10 , further comprising the step of
pre-baking the silicon and carbon containing film under N 2 atmosphere at a temperature ranging from approximately 50° C. to 400° C.; and
subsequently hardbaking the silicon and carbon containing film by a heat-induced radical reaction or a UV-Vis photo induced radical reaction in an atmosphere of O 2 , O 3 , H 2 O, H 2 O 2 , N 2 O, or NO, air, compressed air, or combinations thereof at a temperature range of 200-1000° C. to convert the silicon and carbon containing film to a SiOC or SiOCN containing film.

12. The method of claim 10 , wherein the film forming polycarbosilazane polymer or oligomer has a backbone that comprises Si—N units, Si—N—C n —N—Si units, Si—N—Si units or combinations thereof, wherein n≥1, wherein the backbone includes cross-linked Si—N units, Si—N—C n —N—Si units or Si—N—Si units, branched Si—N units, Si—N—C n —N—Si units or Si—N—Si units, or combinations thereof.

13. The method of claim 10 , wherein the carbosilane has the formula:
R 1 a Si[—(CH 2 ) b —SiH 2 R 2 ] c   (I)

wherein R 1 , R 2 are independently H, a C 1 to C 6 linear, branched or cyclic alkyl- group, a C 1 to C 6 linear, branched or cyclic alkenyl-group, or combination thereof; a=0 to 2

Assignees

• Air Liquide
• Air Liquide American

Inventors

• Liu Yumin
• Girard Jean-Marc
• Zhang Peng
• Qin Fan
• Itov Gennadiy
• Marchegiani Fabrizio
• Larrabee Thomas J

Classifications

• B05D1/005

  Spin coating · CPC title

• B05D1/02

  performed by spraying · CPC title

• B05D3/0209 Primary

  Multistage baking · CPC title

• B05D2202/00

  Metallic substrate · CPC title

• C08G77/62 Primary

  Nitrogen atoms · CPC title