Pure copper powder having Si coating and production method thereof, and additive manufactured object using said pure copper powder

Patent metadata

Field	Value
Publication number	US-11498122-B2
Application number	US-201916968960-A
Country	US
Kind code	B2
Filing date	Dec 26, 2019
Priority date	Dec 27, 2018
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

A pure copper powder with a Si coating formed thereon, wherein a Si adhesion amount is 5 wtppm or more and 200 wtppm or less, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si is 3 or less. An object of the present invention is to provide a pure copper powder with a Si coating formed thereon and a production method thereof, as well as an additive manufactured object using such pure copper powder capable of suppressing the partial sintering of the pure copper powder caused by the preheating thereof in additive manufacturing based on the electron beam (EB) method, and suppressing the loss of the degree of vacuum caused by carbon (C) during the molding process.

First claim

The invention claimed is:

1. A pure copper powder with a Si coating formed thereon, wherein a Si adhesion amount is 5 wtppm or more and 200 wtppm or less, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si of the Si adhesion amount and the C adhesion amount is 3 or less.

2. The pure copper powder according to claim 1 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 μm or more and 150 μm or less.

3. A production method of the pure copper powder according to claim 1 , wherein a pure copper powder is immersed in a solution containing a silane-based coupling agent, and, after forming a Si coating on the pure copper powder, the pure copper powder is heated at 400° C. or higher and 1000° C. or less.

4. The pure copper powder according to claim 1 , wherein an oxygen concentration in the pure copper powder is 1000 wtppm or less.

5. The pure copper powder according to claim 4 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 μm or more and 150 μm or less.

6. A production method of the pure copper powder according to claim 5 , wherein a pure copper powder is immersed in a solution containing a silane-based coupling agent, and, after forming a Si coating on the pure copper powder, the pure copper powder is heated at 400° C. or higher and 1000° C. or less.

7. A pure copper powder with a Si coating formed thereon, wherein, when Si is analyzed via WDX analysis, portions that are 1/10 or more of a maximum signal strength are 40% or higher of a whole particle, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si of a Si adhesion amount and a C adhesion amount is 3 or less.

8. The pure copper powder according to claim 7 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 μm or more and 150 μm or less.

9. A production method of the pure copper powder according to claim 7 , wherein a pure copper powder is immersed in a solution containing a silane-based coupling agent, and, after forming a Si coating on the pure copper powder, the pure copper powder is heated at 400° C. or higher and 1000° C. or less.

10. The pure copper powder according to claim 7 , wherein an oxygen concentration in the pure copper powder is 1000 wtppm or less.

11. The pure copper powder according to claim 10 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 μm or more and 150 μm or less.

12. A production method of the pure copper powder according to claim 11 , wherein a pure copper powder is immersed in a solution containing a silane-based coupling agent, and, after forming a Si coating on the pure copper powder, the pure copper powder is heated at 400° C. or higher and 1000° C. or less.

13. A pure copper powder with a Si coating formed thereon, wherein a film thickness of the Si coating is 5 nm or more and 300 nm or less, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si of a Si adhesion amount and a C adhesion amount is 3 or less.

14. The pure copper powder according to claim 13 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 μm or more and 150 μm or less.

15. A production method of the pure copper powder according to claim 13 , wherein a pure copper powder is immersed in a solution containing a silane-based coupling agent, and, after forming a Si coating on the pure copper powder, the pure copper powder is heated at 400° C. or higher and 1000° C. or less.

16. The pure copper powder according to claim 13 , wherein an oxygen concentration in the pure copper powder is 1000 wtppm or less.

17. The pure copper powder according to claim 16 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 μm or more and 150 μm or less.

18. A production method of the pure copper powder according to claim 17 , wherein a pure copper powder is immersed in a solution containing a silane-based coupling agent, and, after forming a Si coating on the pure copper powder, the pure copper powder is heated at 400° C. or higher and 1000° C. or less.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Watanabe Hirofumi
• Yamamoto Hiroyoshi
• Shibuya Yoshitaka

Classifications

• C22C9/10 Primary

  with silicon as the next major constituent · CPC title

• B22F1/16

  Metallic particles coated with a non-metal (coated with lubricating or binding agents or with organic material B22F1/10) · CPC title

• B22F1/102 Primary

  Metallic powder coated with organic material · CPC title

• B22F1/00

  Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties · CPC title

• B22F10/28

  Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM] · CPC title