Micromechanical sensor and methods for producing a micromechanical sensor and a micromechanical sensor element

US11493532B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11493532-B2
Application numberUS-202016997218-A
CountryUS
Kind codeB2
Filing dateAug 19, 2020
Priority dateJun 29, 2017
Publication dateNov 8, 2022
Grant dateNov 8, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for producing a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein a first one of the first electrode and the second electrode is movable in a second direction, which is different than the first direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed, the method comprising: producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; and producing the first and the second electrodes in the doped semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode, wherein modifying the electrode wall surface of the first electrode comprises forming a counterdoped region in the electrode wall surface of the first electrode in a part of the semiconductor layer which faces away from the cavity, and wherein the counterdoped region is adjacent to a remaining portion of the electrode wall surface of the first electrode. 2. The method as claimed in claim 1 , wherein: the counterdoped region comprises a first doping type that is different than a second doping type of the semiconductor layer, and the counterdoped region does not contribute to an active capacitor area of the first electrode.

Assignees

Inventors

Classifications

  • Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00) · CPC title

  • Accelerometers · CPC title

  • G01P15/125Primary

    by capacitive pick-up · CPC title

  • Details · CPC title

  • Electrodes · CPC title

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What does patent US11493532B2 cover?
A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second…
Who is the assignee on this patent?
Infineon Tech Dresden Gmbh & Co Kg
What technology area does this patent fall under?
Primary CPC classification G01P15/125. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 08 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).