Z-axis structure in accelerometer
US-2017363656-A1 · Dec 21, 2017 · US
US11493532B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11493532-B2 |
| Application number | US-202016997218-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 19, 2020 |
| Priority date | Jun 29, 2017 |
| Publication date | Nov 8, 2022 |
| Grant date | Nov 8, 2022 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.
Opening claim text (preview).
What is claimed is: 1. A method for producing a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein a first one of the first electrode and the second electrode is movable in a second direction, which is different than the first direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed, the method comprising: producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; and producing the first and the second electrodes in the doped semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode, wherein modifying the electrode wall surface of the first electrode comprises forming a counterdoped region in the electrode wall surface of the first electrode in a part of the semiconductor layer which faces away from the cavity, and wherein the counterdoped region is adjacent to a remaining portion of the electrode wall surface of the first electrode. 2. The method as claimed in claim 1 , wherein: the counterdoped region comprises a first doping type that is different than a second doping type of the semiconductor layer, and the counterdoped region does not contribute to an active capacitor area of the first electrode.
Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00) · CPC title
Accelerometers · CPC title
by capacitive pick-up · CPC title
Details · CPC title
Electrodes · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.