Resist material

US11487204B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11487204-B2
Application numberUS-201816630517-A
CountryUS
Kind codeB2
Filing dateJul 3, 2018
Priority dateJul 27, 2017
Publication dateNov 1, 2022
Grant dateNov 1, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

To provide a resist material that can form a film with high smoothness and uniformity and has high patterning performance, such as resolution, a resist material is provided that contains a calixarene compound (A) with a molecular structure represented by the following structural formula (1) and a resin component (B);wherein R1 denotes a perfluoroalkyl group or a structural moiety with a perfluoroalkyl group; R2 denotes a hydrogen atom, a polar group, a polymerizable group, or a structural moiety with a polar group or a polymerizable group; R3 denotes a hydrogen atom, an aliphatic hydrocarbon group that optionally has a substituent, or an aryl group that optionally has a substituent; n denotes an integer in the range of 2 to 10; and * denotes a bonding point with an aromatic ring.

First claim

Opening claim text (preview).

The invention claimed is: 1. A resist material comprising: a calixarene compound (A) with a molecular structure represented by the following structural formula (1-1) or (1-2); and a resin component (B): wherein R 1 denotes a perfluoroalkyl group or a structural moiety with a perfluoroalkyl group represented by —X—R F , wherein R F denotes the perfluoroalkyl group and X is an alkylene group that optionally has a substituent, a (poly)alkylene ether structure, a (poly)alkylene thioether structure, a (poly)ester structure, a (poly)urethane structure, or a structural moiety composed thereof; R 2 denotes a hydrogen atom, a polar group selected from a hydroxy group, an amino group, a carboxy group, a thiol group, a phosphate group, and an alkoxysilyl group, a polymerizable group selected from a vinyl group, a vinyloxy group, an ethynyl group, an ethynyloxy group, a (meth)acryloyl group, a (meth)acryloyloxy group, a (2-methyl)glycidyl group, a (2-methyl)glycidyloxy group, a 3-alkyloxetanylmethyl group, and a 3-alkyloxetanylmethyloxy group, or a structural moiety with the polar group or the polymerizable group; and R 3 denotes a hydrogen atom, an aliphatic hydrocarbon group that optionally has a substituent, or an aryl group that optionally has a substituent; n denotes an integer in the range of 2 to 10. 2. The resist material according to claim 1 , wherein the resin component (B) contains as an essential component an active energy beam curing compound (B1), a resin with a novolak phenolic hydroxy group or a modified product thereof (B2), a calixarene compound other than the calixarene compound (A) or a modified product thereof (B3), a (poly)hydroxystyrene resin (B4), or another resin with a phenolic hydroxy group or a modified product thereof (B5). 3. The resist material according to claim 1 , wherein R 2 denotes the structural moiety with the polar group represented by one of the following structural formulae (3-1) to (3-7), wherein R 4 independently denotes an alkylene group having 1 to 6 carbon atoms, and R 5 denotes an alkyl group having 1 to 3 carbon atoms. 4. The resist material according to claim 1 , wherein X is a (poly)alkylene ether chain or a (poly)alkylene thioether chain. 5. The resist material according to claim 4 , wherein X has an alkylene group having 1 to 6 carbon atoms. 6. The resist material according to claim 1 , wherein n is 4, 6, or 8. 7. The resist material according to claim 2 , wherein R 2 denotes the structural moiety with the polar group represented by one of the following structural formulae (3-1) to (3-7), wherein R 4 independently denotes an alkylene group having 1 to 6 carbon atoms, and R 5 denotes an alkyl group having 1 to 3 carbon atoms. 8. The resist material according to claim 2 , wherein X is a (poly)alkylene ether chain or a (poly)alkylene thioether chain. 9. The resist material according to claim 8 , wherein X has an alkylene group having 1 to 6 carbon atoms. 10. The resist material according to claim 2 , wherein n is 4, 6, or 8. 11. The resist material according to claim 1 , wherein R 2 denotes a polymerizable group selected from a vinyl group, a vinyloxy group, an ethynyl group, an ethynyloxy group, a (meth)acryloyl group, a (meth)acryloyloxy group, a (2-methyl)glycidyl group, a (2-methyl)glycidyloxy group, a 3-alkyloxetanylmethyl group, and a 3-alkyloxetanylmethyloxy group, or a structural moiety with the polymerizable group. 12. The resist material according to claim 2 , wherein R 2 denotes a polymerizable group selected from a vinyl group, a vinyloxy group, an ethynyl group, an ethynyloxy group, a (meth)acryloyl group, a (meth)acryloyloxy group, a (2-methyl)glycidyl group, a (2-methyl)glycidyloxy group, a 3-alkyloxetanylmethyl group, and a 3-alkyloxetanylmethyloxy group, or a structural moiety with the polymerizable group.

Assignees

Inventors

Classifications

  • the carbon skeleton containing six-membered aromatic rings · CPC title

  • characterised by the non-macromolecular additives · CPC title

  • Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins · CPC title

  • G03F7/004Primary

    Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

  • G03F7/091Primary

    characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

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What does patent US11487204B2 cover?
To provide a resist material that can form a film with high smoothness and uniformity and has high patterning performance, such as resolution, a resist material is provided that contains a calixarene compound (A) with a molecular structure represented by the following structural formula (1) and a resin component (B);wherein R1 denotes a perfluoroalkyl group or a structural moiety with a perfluo…
Who is the assignee on this patent?
Dainippon Ink & Chemicals
What technology area does this patent fall under?
Primary CPC classification G03F7/004. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 01 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).