SiH-free vinyldisilanes

Patent metadata

Field	Value
Publication number	US-11485642-B2
Application number	US-201716331161-A
Country	US
Kind code	B2
Filing date	Sep 15, 2017
Priority date	Sep 22, 2016
Publication date	Nov 1, 2022
Grant date	Nov 1, 2022

Abstract

A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.

First claim

The invention claimed is:

1. A SiH-free vinyldisilane compound independently consisting of 6 silicon-bonded substituents selected from 1 to 5 silicon-bonded vinyl groups, 0 to 4 silicon-bonded chlorine atoms, and 1 to 5 silicon-bonded dialkylamino groups, respectively.

2. The SiH-free vinyldisilane compound of claim 1 wherein the silicon-bonded substituents are selected from 1 to 5 silicon-bonded vinyl groups and from 1 to 5 silicon-bonded dialkylamino groups, respectively.

3. The SiH-free vinyldisilane compound of claim 2 that is a per(dialkylamino,vinyl)disilane independently selected from 1,2-bis(N,N-diethylamino)-1,1,2,2-tetravinyldisilane and 1,2-bis(N,N-di(1-methylethyl)amino)-1,1,2,2-tetravinyldisilane.

4. The SiH-free vinyldisilane compound of claim 1 wherein the silicon-bonded substituents are selected from 1 to 4 silicon-bonded vinyl groups, 1 to 4 silicon-bonded chlorine atoms, and 1 to 4 silicon-bonded dialkylamino groups, respectively.

5. The SiH-free vinyldisilane compound of claim 4 that is a per(chloro,dialkylamino,vinyl)disilane independently selected from 1,2-bis(N,N-diethylamino)-1,1-dichloro-2,2-divinyldisilane; 1-(N,N-di(1-methylethyl)amino)-1,1,2,2-tetrachloro-2-vinyldisilane; 1-(N,N-di(1-methylethyl)amino)-1,1,2-trichloro-2,2-divinyldisilane; and 1-(N,N-di(1-methylethyl)amino)-1,1-dichloro-2,2,2-trivinyldisilane.

6. A method of making a SiH-free vinyldisilane compound independently consisting of 6 silicon-bonded substituents selected from 1 to 5 silicon-bonded vinyl groups, 0 to 4 silicon-bonded chlorine atoms, and 1 to 5 silicon-bonded dialkylamino groups, respectively, the method comprising contacting a SiH-free chlorodisilane compound independently consisting of 6 silicon-bonded substituents selected from 1 to 6 silicon-bonded chlorine atoms and 1 to 5 silicon-bonded dialkylamino groups with from 1 to 5 mole equivalents of a vinylmagnesium chloride or with from 0.5 to 2.5 mole equivalents of divinylmagnesium to give a reaction product comprising the SiH-free vinyldisilane compound.

7. A method of treating an initial surface of a substrate, the method comprising a first contacting step comprising contacting the initial surface of the substrate with a vapor of a SiH-free vinyldisilane compound of claim 1 , using a first deposition method to give a product comprising a treated surface on the substrate.

8. A method of making a silicon-heteroatom compound, the method comprising a first contacting step comprising contacting an initial surface of a substrate with a vapor of a SiH-free vinyldisilane compound of claim 1 , using a first deposition method to give a treated surface on the substrate; and a second contacting step comprising contacting the treated surface of the substrate with a vapor or plasma of a precursor material containing nitrogen atom(s), oxygen atom(s), carbon atom(s), or a combination of any two or more atoms thereof using a second deposition method to give a product comprising a silicon-heteroatom compound formed with or on treated surface of the substrate.

9. The method of claim 8 wherein the precursor material containing nitrogen atom(s) is molecular nitrogen, ammonia, hydrazine, an organohydrazine, hydrogen azide, a primary amine, or a secondary amine; the precursor material containing oxygen atom(s) is molecular oxygen, ozone, water, nitrous oxide (N 2 O), or hydrogen peroxide; and the precursor material containing carbon atom(s) is methane, ethane, propane, a butane, a chloromethylsilane, a permethylsilane having from 1 to 5 Si atoms, or a methylhydridosilane having 1 to 5 Si atoms.

10. The method of claim 8 further comprising a step of separating the silicon-heteroatom compound of the product from the substrate of the product so as to give the separated silicon-heteroatom compound as a free-standing bulk form.

Assignees

• Dow Silicones Corp
• Ddp Specialty Electronic Mat Us 9 Llc

Inventors

• Rekken Brian D

Classifications

• C07F7/0803

  Compounds with Si-C or Si-Si linkages · CPC title

• C01B33/107 Primary

  Halogenated silanes · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C01B21/088

  containing also one or more halogen atoms · CPC title

• C23C16/30

  Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title