Heat utilizing device

US11480477B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11480477-B2
Application numberUS-201816969015-A
CountryUS
Kind codeB2
Filing dateMar 6, 2018
Priority dateMar 6, 2018
Publication dateOct 25, 2022
Grant dateOct 25, 2022

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A heat utilizing device comprising: a thermistor whose electric resistance changes depending on temperature; and first and second wiring layers that are connected to the thermistor, at least one separating layer that separates the first wiring layer in a thickness direction of the first wiring layer, wherein the at least one separating layer has a smaller heat conductivity than the first wiring layer. 2. The heat utilizing device according to claim 1 , further comprising a support layer that supports the thermistor and the first and second wiring layers, wherein the support layer has a smaller heat conductivity than the first and second wiring layers. 3. The heat utilizing device according to claim 2 , further comprising: a housing that forms an inner space that is at a negative pressure as compared to outside; and first and second pillars that are supported by the housing in the inner space, wherein the thermistor, the first and second wiring layers and the support layer are housed in the inner space, and the support layer is connected to the housing only via the first and second pillars. 4. The heat utilizing device according to claim 3 , wherein the support layer comprises: a central portion that supports the thermistor; a first arm portion that holds at least a part of the first wiring layer and that connects the central portion to the first pillar; and a second arm portion that holds at least a part of the second wiring layer and that connects the central portion to the second pillar. 5. The heat utilizing device according to claim 4 , wherein the at least a part of the first wiring layer that is held by the first arm portion is non-linear and a center line of the at least a part of the first wiring layer intersects a direction in which the first arm portion extends. 6. The heat utilizing device according to claim 1 , further comprising scattered bodies that are scattered in the first and second wiring layers, wherein the scattered bodies have a smaller heat conductivity than the first and second wiring layers. 7. The heat utilizing device according to claim 1 , further comprising: an arm portion that is connected to the thermistor; and a band region that extends along the arm portion, wherein at least a part of a periphery of the band region in a width direction thereof and at least a part of a periphery of the band region in a thickness direction thereof are made of a conductive material, wherein the conductive material continuously extends from one end thereof that is connected to the thermistor to another end thereof, and the conductive material has a boundary with a material having a smaller heat conductivity than the conductive material inside the band region. 8. The heat utilizing device according to claim 1 , wherein a mean free path of phonons in the first wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of the first wiring layer, and a mean free path of phonons in the second wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of the second wiring layer. 9. The heat utilizing device according to claim 1 , wherein portions into which the first wiring layer is separated are connected in parallel. 10. A heat utilizing device comprising: a thermistor whose electric resistance changes depending on temperature; first and second wiring layers that are connected to the thermistor, and at least one separating layer that separates the first wiring layer in a width direction of the first wiring layer, wherein the separating layer has a smaller heat conductivity than the first wiring layer.

Assignees

Inventors

Classifications

  • Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title

  • Cooling, heating or ventilating arrangements · CPC title

  • H01C1/012Primary

    the base extending along and imparting rigidity or reinforcement to the resistive element (H01C1/016 takes precedence; the resistive element being formed in two or more coils or loops as a spiral, helical or toroidal winding H01C3/18, H01C3/20; the resistive element being formed as one or more layers or coatings on a base H01C7/00) · CPC title

  • G01K7/22Primary

    the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title

  • including means to minimise changes in resistance with changes in temperature · CPC title

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Frequently asked questions

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What does patent US11480477B2 cover?
A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path…
Who is the assignee on this patent?
Tdk Corp
What technology area does this patent fall under?
Primary CPC classification H01C1/012. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 25 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).