Composition having suppressed alumina damage and production method for semiconductor substrate using same

Patent metadata

Field	Value
Publication number	US-11479744-B2
Application number	US-201916976614-A
Country	US
Kind code	B2
Filing date	Feb 27, 2019
Priority date	Mar 2, 2018
Publication date	Oct 25, 2022
Grant date	Oct 25, 2022

Abstract

The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

First claim

The invention claimed is:

1. A method for producing a semiconductor substrate having an alumina layer, the method comprising: removing a dry etching residue using a composition, comprising:
from 0.00005 to 1% by mass of a barium compound (A) and from 0.01 to 20% by mass of a fluorine compound (B), and which has a pH of 2.5 to 8.0, wherein a content of hydrogen peroxide in the composition is less than 0.002% by mass.

2. The method according to claim 1 , wherein the barium compound (A) comprises at least one selected from the group consisting of barium nitrate, barium acetate, barium chloride, barium hydroxide, barium sulfite, barium chlorate, barium perchlorate, barium peroxide, barium chromate, barium oxide, barium cyanide, barium bromide, barium carbonate, barium metaborate, barium iodide, barium tetrafluoroborate, barium sulfate and barium sulfide.

3. The method according to claim 1 , wherein the barium compound (A) comprises at least one selected from the group consisting of barium nitrate, barium acetate, barium chloride and barium hydroxide.

4. The method according to claim 1 , wherein the fluorine compound (B) comprises hydrofluoric acid or a fluoride salt.

5. The method according to claim 1 , which has a pH of 3.1 to 7.4.

6. The method according to claim 1 , further comprising from 0.01 to 10% by mass of a benzotriazole compound (C).

7. The method according to claim 1 , further comprising from 0.0005 to 1% by mass of a compound (D) having a pyrrolidone structure.

8. The method according to claim 1 , wherein an etching rate of alumina at 50° C. is 40 Å/min (4.0×10 −9 m/min) or lower.

9. The method according to claim 1 , wherein an etching rate of cobalt at 50° C. is 1.0 Å/min (1.0×10 −10 m/min) or lower.

10. The method according to claim 1 , wherein an etching rate of a low-dielectric-constant interlayer dielectric film at 50° C. is 1.0 Å/min (1.0×10 −10 m/min) or lower.

11. The method according to claim 1 , which is suitable for removing a dry etching residue on a semiconductor substrate having an alumina layer.

12. A method for washing a semiconductor substrate having an alumina layer, the method comprising:
removing a dry etching residue using a composition comprising:
from 0.00005 to 1% by mass of a barium compound (A) and from 0.01 to 20% by mass of a fluorine compound (B), and which has a pH of 2.5 to 8.0, wherein a content of hydrogen peroxide in the composition is less than 0.002% by mass.

13. The method according to claim 12 , wherein the barium compound (A) comprises at least one selected from the group consisting of barium nitrate, barium acetate, barium chloride, barium hydroxide, barium sulfite, barium chlorate, barium perchlorate, barium peroxide, barium chromate, barium oxide, barium cyanide, barium bromide, barium carbonate, barium metaborate, barium iodide, barium tetrafluoroborate, barium sulfate and barium sulfide.

14. The method according to claim 12 , wherein the barium compound (A) comprises at least one selected from the group consisting of barium nitrate, barium acetate, barium chloride and barium hydroxide.

15. The method according to claim 12 , wherein the fluorine compound (B) comprises hydrofluoric acid or a fluoride salt.

16. The method according to claim 12 , further comprising from 0.01 to 10% by mass of a benzotriazole compound (C).

17. The method according to claim 12 , further comprising from 0.0005 to 1% by mass of a compound (D) having a pyrrolidone structure.

18. The method according to claim 12 , which is suitable for removing a dry etching residue on a semiconductor substrate having an alumina layer.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• OIE Toshiyuki
• HORITA Akinobu
• Yamada Kenji
• KIKUNAGA Takahiro

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• C11D7/265

  Carboxylic acids or salts thereof · CPC title