Alkaline earth metal-containing cleaning solution for cleaning semiconductor element, and method for cleaning semiconductor element using same

Patent metadata

Field	Value
Publication number	US-10377978-B2
Application number	US-201515522221-A
Country	US
Kind code	B2
Filing date	Oct 2, 2015
Priority date	Nov 13, 2014
Publication date	Aug 13, 2019
Grant date	Aug 13, 2019

Abstract

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue and photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from between a material that contains 10 atom % or more of titanium and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains: 0.002-50 mass % of at least one type of oxidizing agent selected from among a peroxide, perchloric acid, and a perchlorate salt; 0.000001-5 mass % of an alkaline earth metal compound; and water.

First claim

The invention claimed is:

1. A cleaning solution which removes a dry etching residue and a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from a material that contains 10 atomic % or more of titanium and a material that contains 10 atomic % or more of tungsten, wherein:
the cleaning solution comprises:
0.002 to 50% by mass of at least one oxidant selected from the group consisting of a peroxide, perchloric acid and a perchlorate salt,
0.000001 to 5% by mass of an alkaline earth metal compound,
a pH adjuster, and
water;

the cleaning solution has a pH value ranging from 3 to 14; and
the cleaning solution does not contain hydrogen fluoride and does not contain strontium nitrate.

2. The cleaning solution according to claim 1 , wherein the pH value of the cleaning solution is 7.7 to 14.

3. The cleaning solution according to claim 1 , wherein the cleaning solution includes at least one peroxide selected from the group consisting of hydrogen peroxide, urea peroxide, m-chloro peroxybenzoic acid, tert-butyl hydroperoxide, peracetic acid, di-tert-butyl peroxide, benzoyl peroxide, acetone peroxide, methyl ethyl ketone peroxide, hexamethylene triperoxide and cumene hydroperoxide.

4. The cleaning solution according to claim 1 , wherein the cleaning solution comprises at least one perchlorate salt selected from the group consisting of ammonium perchlorate, potassium perchlorate, calcium perchlorate, magnesium perchlorate, silver perchlorate, sodium perchlorate, barium perchlorate, lithium perchlorate, zinc perchlorate, acetylcholine perchlorate, lead perchlorate, rubidium perchlorate, cesium perchlorate, cadmium perchlorate, iron perchlorate, aluminium perchlorate, strontium perchlorate, tetrabutylammonium perchlorate, lanthanum perchlorate, indium perchlorate and tetra-n-hexylammonium perchlorate.

5. The cleaning solution according to claim 1 , wherein the oxidant is hydrogen peroxide.

6. The cleaning solution according to claim 1 , wherein the pH value of the cleaning solution ranges from 8 to 14.

7. The cleaning solution according to claim 1 , wherein:
the cleaning solution is adapted to function as a cleaning solution that removes a dry etching residue and a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from the group consisting of a material comprising 10 atomic % or more of titanium and a material comprising 10 atomic % or more of tungsten; and
the at least one material comprises at least one selected from the group consisting of titanium oxide, titanium nitride, titanium and titanium silicide.

8. The cleaning solution according to claim 1 , wherein:
the cleaning solution is adapted to function as a cleaning solution that removes a dry etching residue and a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from the group consisting of a material comprising 10 atomic % or more of titanium and a material comprising 10 atomic % or more of tungsten; and
the at least one material comprises at least one selected from the group consisting of tungsten oxide, tungsten nitride, tungsten and tungsten silicide.

9. The cleaning solution according to claim 1 , wherein the alkaline earth metal compound is at least one selected from the group consisting of a calcium compound, a strontium compound and a barium compound, with the proviso that the strontium compound does not include the strontium nitrate.

10. A cleaning method for removing a dry etching residue and a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from the group consisting of a material comprising 10 atomic % or more of titanium and a material comprising 10 atomic % or more of tungsten, said method comprising contacting the surface with the cleaning solution of claim 1 .

11. The cleaning solution according to claim 1 , wherein the alkaline earth metal compound is selected from the group consisting of an alkaline earth metal acetate, an alkaline earth metal bromide, an alkaline earth metal chloride, an alkaline earth metal fluoride, an alkaline earth metal iodide, an alkaline earth metal nitrate, an alkaline earth metal oxide, an alkaline earth metal phosphate, an alkaline earth metal sulfate, and combinations thereof.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• OIE Toshiyuki
• Shimada Kenji

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P50/287

  by chemical means · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title