Optical device including three-coupled quantum well structure having asymmetric multi-energy levels

Patent metadata

Field	Value
Publication number	US-11476385-B2
Application number	US-202016884674-A
Country	US
Kind code	B2
Filing date	May 27, 2020
Priority date	Jan 8, 2016
Publication date	Oct 18, 2022
Grant date	Oct 18, 2022

Abstract

Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

First claim

What is claimed is:

1. An optical device comprising:
an active layer comprising two outer barriers and a coupled quantum well between the two outer barriers,
wherein the coupled quantum well comprises:
a first quantum well layer;
a second quantum well layer;
a third quantum well layer;
a first coupling barrier between the first quantum well layer and the second quantum well layer; and
a second coupling barrier between the second quantum well layer and the third quantum well layer,

wherein the second quantum well layer is between the first quantum well layer and the third quantum well layer,
wherein an energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer, and the energy band gap of the third quantum well layer is less than the energy band gap of the first quantum well layer, and
wherein the first, second, and third quantum well layers comprise at least one of In 1-x Ga x As and In 1-x-y Ga x Al y As, the first and second coupling barriers comprise at least one of In 1-x′-y Ga x′ Al y′ As (x′<x, y<y′) and In 1-x′ Ga x′ As z P 1-z (x′<x) and an outer barrier comprises at least one of In 1-x″-y Ga x″ Al y″ As (x″<x, y<y″) and In 1-x′ Ga x′ As z P 1-z (x″<x′<x,z<z′), and 0<x,y,z<1, and
wherein an amount of indium (In) in In 1-x Ga x As or In 1-x-y Ga x Al y As is smallest in the first quantum well layer among the first, second, and third quantum well layers and the amount of indium (In) In 1-x Ga x As or In 1-x-y Ga x Al y As is largest in the third quantum well layer among the first, second, and third quantum well layers.

2. The optical device of claim 1 , wherein the energy band gap of the third quantum well layer is less than the energy band gap of the second quantum well layer.

3. The optical device of claim 1 , wherein a thickness of the first quantum well layer and a thickness of the third quantum well layer are less than a thickness of the second quantum well layer.

4. The optical device of claim 3 , wherein the thickness of the first quantum well layer is equal to the thickness of the third quantum well layer.

5. The optical device of claim 3 , wherein the thickness of the first quantum well layer and the thickness of the third quantum well layer are in a range from about 1 nm to about 2 nm, and the thickness of the second quantum well layer is in a range from about 4 nm to about 8 nm.

6. The optical device of claim 1 , wherein an energy band gap of the first coupling barrier and an energy band gap of the second coupling barrier are greater than the energy band gaps of the first, the second, and the third quantum well layers and are less than an energy band gap of an outer barrier.

7. The optical device of claim 1 , wherein a thickness of the first coupling barrier allows tunneling of an electron and a hole through the first coupling barrier and a thickness of the second coupling barrier allows the tunneling of the electron and the hole through the second coupling barrier.

8. The optical device of claim 7 , wherein the thickness of the first coupling barrier and the thickness of the second coupling barrier are in a range from about 1 nm to about 3 nm.

9. The optical device of claim 1 , further comprising a substrate,
wherein each of the first, the second, and the third quantum well layers comprises a material having a compressive strain with respect to the substrate, and an outer barrier comprises a material having a tensile strain with respect to the substrate.

10. The optical device of claim 1 , further comprising:
a lower reflective layer under the active layer and doped in a first conductive type; and
an upper reflective layer on the active layer and doped in a second conductive type that is electrically opposite to the first conductive type.

11. The optical device of claim 10 , further comprising:
at least one micro cavity layer in at least one of the lower reflective layer or the upper reflective layer,
wherein when a resonance wavelength of the optical device is k, an optical thickness of the active layer and an optical thickness of the at least one micro cavity layer are each an integral multiple of λ/2.

12. The optical device of claim 10 , wherein the optical device comprises a reflective optical modulator, and a reflectance of the lower reflective layer is greater than a reflectance of the upper reflective layer.

13. The optical device of claim 10 , wherein the optical device comprises a transmissive optical modulator, and a reflectance of the lower reflective layer is equal to a reflectance of the upper reflective layer.

14. The optical device of claim 1 , wherein the active layer comprises a first active layer and a second active layer.

15. The optical device of claim 14 , further comprising:
a lower reflective layer under the first active layer and doped in a first conductive type;
an intermediate reflective layer between the first active layer and the second active layer and doped in a second conductive type that is electrically opposite to the first conductive type; and
an upper reflective layer on the second active layer and doped in the first conductive type.

16. The optical device of claim 14 , wherein a thickness of the second quantum well layer of the coupled quantum well of the first active layer is different from a thickness of the second quantum well layer of the coupled quantum well of the second active layer.

17. The optical device of claim 14 , wherein the energy band gap of the third quantum well layer is equal to the energy band gap of the second quantum well layer in the first active layer, and the energy band gap of the third quantum well layer is less than the energy band gap of the second quantum well layer in the second active layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Na Byunghoon
• Park Changyoung
• Park Yonghwa

Classifications

• G02F1/01766

  Strained superlattice devices; Strained quantum well devices · CPC title

• G02F1/01733

  Coupled or double quantum wells · CPC title

• Y02E10/548

  Amorphous silicon PV cells · CPC title

• G02F1/01725 Primary

  Non-rectangular quantum well structures, e.g. graded or stepped quantum wells · CPC title

• E03C1/328 Primary

  adjustable · CPC title