Method for the protection of a hafnium-free, nickel-based monocrystalline superalloy part against corrosion and oxidation

Patent metadata

Field	Value
Publication number	US-11473185-B2
Application number	US-201716308331-A
Country	US
Kind code	B2
Filing date	Jun 9, 2017
Priority date	Jun 10, 2016
Publication date	Oct 18, 2022
Grant date	Oct 18, 2022

Abstract

A process for protecting a part made of a hafnium-free nickel-based single-crystal superalloy against corrosion and oxidation includes manufacturing a part made of a hafnium-free nickel-based single-crystal superalloy, depositing successively on the part, a first layer including hafnium, then a mixed layer of stacked layers of an undercoat of an alloy having 10 atomic % or more of aluminum and a second layer including hafnium or a mixed layer of an alloy of aluminum and hafnium, and then a third layer including hafnium, and diffusing and performing an oxidation treatment so as to obtain a hafnium-doped alumina layer.

First claim

The invention claimed is:

1. A process for protecting a hafnium-free nickel-based single-crystal superalloy part against corrosion and oxidation, wherein the process comprises at least:
a step of manufacturing the hafnium-free nickel-based single-crystal superalloy part;
a step of depositing a first layer comprising hafnium, directly on said hafnium-free nickel-based single-crystal superalloy part;
then a step of depositing directly on the first layer comprising hafnium, either alternately an undercoat of an alloy comprising at least 10 atomic % of aluminum and a second layer comprising hafnium so as to form a mixed layer of stacked layers on the first layer comprising hafnium, or simultaneously hafnium and an alloy comprising at least 10 atomic % of aluminium so as to form a mixed layer of alloy on the first layer comprising hafnium; and
then a step of depositing a third layer comprising hafnium directly on the mixed layer of stacked layers or on the mixed layer of alloy,
wherein the process comprises after the step of depositing the third layer comprising hafnium, a step of diffusing said first layer comprising hafnium in an upper part of said hafnium-free nickel-based single-crystal superalloy part, so as to form a first interdiffusion zone in the upper part of said hafnium-free nickel-based single-crystal superalloy part, and of diffusing the third layer comprising hafnium on a surface of the mixed layer of stacked layers or on a surface of the mixed layer of alloy, so as to form a second interdiffusion zone on the surface of the mixed layer of stacked layers or on the surface of the mixed layer of alloy,
and after the step of diffusing, a step of carrying out an oxidation treatment of the second interdiffusion zone, so as to obtain a layer of hafnium-doped alumina on a surface of the second interdiffusion zone,
wherein at least one of the step of depositing the first layer comprising hafnium, the step of depositing the undercoat of the alloy comprising at least 10 atomic % of aluminum and the second layer comprising hafnium, or the step of depositing the third layer comprising hafnium is carried out by cathode sputtering at a temperature comprised between 100° C. and 900° C., under a pressure comprised between 0.1 Pa and 1 Pa, with a power density comprised between 2 and 15 W/cm 2 and a negative polarization comprised between −500 V and −150 V upon the hafnium-free nickel-based single-crystal superalloy part and under ionic bombardment between −200V and 500V for 10 to 30 minutes during the cathode sputtering.

2. A process for protecting a hafnium-free nickel-based single-crystal superalloy part against corrosion and oxidation, wherein the process comprises at least:
a step of manufacturing the hafnium-free nickel-based single-crystal superalloy part;
a step of depositing a first layer comprising hafnium, directly on said hafnium-free nickel-based single-crystal superalloy part;
then a step of diffusing the first layer comprising hafnium in an upper part of said hafnium-free nickel-based single-crystal superalloy part, so as to form a first interdiffusion zone in the upper part of said hafnium-free nickel-based single-crystal superalloy part;
then a step of depositing, directly on the first interdiffusion zone, either alternately an undercoat of an alloy comprising at least 10 atomic % of aluminum and a second layer comprising hafnium so as to form a mixed layer of stacked layers on the first layer comprising hafnium, or simultaneously hafnium and an alloy comprising at least 10 atomic % of aluminium so as to form a mixed layer of alloy on the first layer comprising hafnium;
then a step of depositing a third layer comprising hafnium directly on said mixed layer of stacked layers or of alloy,
then a step of diffusing the third layer comprising hafnium on a surface of the mixed layer of stacked layers or on a surface of the mixed layer of alloy, so as to form a second interdiffusion zone on the surface of the mixed layer of stacked layers or on the surface of the mixed layer of alloy; and
after the step of diffusing, a step of carrying out an oxidation treatment of the second interdiffusion zone, so as to obtain a layer of hafnium-doped alumina on a surface of the second interdiffusion zone,
wherein at least one of the step of depositing the first layer comprising hafnium, the step of depositing the undercoat of the alloy comprising at least 10 atomic % of aluminum and the second layer comprising hafnium, or the step of depositing the third layer comprising hafnium is carried out by cathode sputtering at a temperature comprised between 100° C. and 900° C., under a pressure comprised between 0.1 Pa and 1 Pa, with a power density comprised between 2 and 15 W/cm 2 and a negative polarization comprised between −500 V and −150 V upon the hafnium-free nickel-based single-crystal superalloy part and under ionic bombardment between −200V and 500V for 10 to 30 minutes during the cathode sputtering.

3. The process according to claim 1 , wherein the process comprises a step of depositing a thermal barrier layer on said layer of hafnium-doped alumina.

4. The process according to claim 1 , wherein the step of diffusing the first layer comprising hafnium and the third layer comprising hafnium is carried out by heat treatment under vacuum or in a presence of a mixture of argon and 5% by volume helium, by increasing a temperature until reaching between 800° C. and 1200° C., by maintaining the temperature for 1 hour to 4 hours, and after the maintaining of the temperature for 1 hour to 4 hours, decreasing the temperature until room temperature is reached.

5. The process according to claim 1 , wherein the step of carrying out the oxidation treatment of the second interdiffusion zone is carried out by heat treatment under partial pressure of oxygen or argon, by increasing a temperature until reaching between 900° C. and 1200° C.

6. The process according to claim 1 , wherein the first layer comprising hafnium has a thickness between 50 nm and 800 nm.

7. The process according to claim 1 , wherein the undercoat of the alloy comprising at least 10 atomic % of aluminum is selected from NiAlCrSi, NiAlCrSiPt, NiCoAlCrSiPt, NiAl, NiPtAl or MCrAlY with M equal to cobalt, nickel or cobalt-nickel.

8. The process according to claim 1 , wherein the undercoat of the alloy comprising at least 10 atomic % of aluminum has a thickness between 5 μm and 30 μm.

9. The process according to claim 1 , wherein the second layer comprising hafnium has a thickness between 20 nm and 700 nm.

10. The process according to claim 1 , wherein the third layer comprising hafnium has a thickness between 10 nm and 100 nm.

11. The process according to claim 1 , wherein the first layer comprising hafnium has a thickness between 50 nm and 300 nm.

12. The process according to claim 2 , wherein the process comprises a step of depositing a thermal barrier layer on said layer of hafnium-doped alumina.

13. The process according to claim 3 , wherein the step of diffusing the first layer comprising hafnium and the third layer comprising hafnium is carried out by heat treatment under vacuum or in the presence of a mixture of argon and 5% by volume helium, by increasing a temperature until reaching between 800° C. and 1200° C., by maintaining the temperature for 1 hour to 4 hours, and after the maintaining of the temperature for 1 hour to 4 hours, decreasing the temperature until room temperature is reached.

14. The process according to claim 3 , wherein the step of carrying out the oxidation treatment of the second interdiffusion zone is carried out by heat treatment under partial pressure of oxygen

Assignees

• Safran

Inventors

• Saboundji Amar
• Jaquet Virginie

Classifications

• C23C28/345

  with at least one oxide layer · CPC title

• C23C14/34

  Sputtering · CPC title

• C23C10/08

  only one element being diffused · CPC title

• C23C28/3455

  with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer · CPC title

• C23C14/14

  Metallic material, boron or silicon · CPC title