Process for manufacturing a part made of nickle-based superalloy containing hafnium

Patent metadata

Field	Value
Publication number	US-11078567-B2
Application number	US-201716308245-A
Country	US
Kind code	B2
Filing date	Jun 9, 2017
Priority date	Jun 10, 2016
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

The invention relates to a process for manufacturing a part made of nickel-based monocrystalline superalloy containing hafnium. This process is noteworthy in that it comprises the following successive steps consisting in: —manufacturing a nickel-based monocrystalline superalloy that is not doped with hafnium, —manufacturing a part from this superalloy, —directly depositing on said part a layer of hafnium having a thickness of between 50 nm and 800 nm, —carrying out a diffusion treatment of the hafnium so as to form an interdiffusion layer at the surface of said part and to thus obtain a part made of nickel-based monocrystalline superalloy containing hafnium.

First claim

The invention claimed is:

1. A process for manufacturing a hafnium-containing nickel-based single-crystal superalloy part, wherein the process comprises the following successive steps:
manufacturing a nickel-based, non-hafnium-doped, single-crystal superalloy,
manufacturing a part from this superalloy,
depositing, directly on said part, a layer of nanocrystalline or microcrystalline hafnium having a thickness comprised between 50 nm and 800 nm,
carrying out a hafnium diffusion treatment so as to form an interdiffusion layer on the surface of said part, and thereby obtain a hafnium-containing nickel-based single-crystal superalloy part.

2. The process according to claim 1 , wherein the deposition of the layer of hafnium is carried out by physical vapour deposition (PVD).

3. The process according to claim 2 , wherein the deposition of the layer of hafnium is carried out by cathode sputtering.

4. The process according to claim 1 , wherein the deposition of the layer of hafnium is carried out by chemical vapour deposition (CVD).

5. The process according to claim 1 , wherein the layer of hafnium deposited on said part has a thickness comprised between 50 nm and 300 nm.

6. The process according to claim 1 , wherein the hafnium diffusion treatment is carried out under vacuum or under a mixture of 95% by volume argon and 5% by volume helium, by carrying out a temperature increase until bringing said part to a temperature comprised between 500° C. and 1,200° C., maintaining this temperature for 1 hour to 4 hours and cooling said part until it returns to room temperature.

7. The process according to claim 1 , wherein the non-hafnium-doped nickel-based single-crystal superalloy comprises in mass percent 5.2% aluminium, 6.5% cobalt, 7.8% chromium, 2% molybdenum, 7.9% tantalum, 1.1% titanium, 5.7% tungsten and the remainder nickel.

8. The process according to claim 1 , wherein the non-hafnium-doped nickel-based single-crystal superalloy comprises in mass percent 5.6% aluminium, 9.6% cobalt, 6.5% chromium, 0.6% molybdenum, 3% rhenium, 6.5% tantalum, 1% titanium, 6% tungsten and the remainder nickel.

9. The process according to claim 1 , wherein the non-hafnium-doped nickel-based single-crystal superalloy comprises in mass percent 5.73% aluminium, 9.6% cobalt, 3.46% chromium, 0.6% molybdenum, 4.9% rhenium, 8.3% tantalum, 0.9% titanium, 5.5% tungsten and the remainder nickel.

10. The process according to claim 1 , wherein the non-hafnium-doped nickel-based single-crystal superalloy comprises in mass percent 5.7% aluminium, 3% cobalt, 2% chromium, 0.4% molybdenum, 6% rhenium, 8% tantalum, 0.2% titanium, 5% tungsten, 0.1% niobium and the remainder nickel.

11. The process according to claim 1 , wherein the non-hafnium-doped single-crystal nickel-based superalloy comprises in mass percent 5.8% aluminium, 12.5% cobalt, 4.2% chromium, 1.4% molybdenum, 5.4% rhenium, 7.2% tantalum, 6% tungsten and the remainder nickel.

12. The process according to claim 1 , wherein the non-hafnium-doped nickel-based single-crystal superalloy comprises in mass percent 6% aluminium, less than 0.2% cobalt, 4% chromium, 1% molybdenum, 4% rhenium, 5% tantalum, 0.5% titanium, 5% tungsten, 4% ruthenium and the remainder nickel.

13. The process according to claim 1 , wherein the non-hafnium-doped nickel-based single-crystal superalloy comprises nickel, aluminium, cobalt, chromium, molybdenum, tantalum and tungsten.

14. The process according to claim 1 , wherein the non-hafnium-doped nickel-based single-crystal superalloy comprises in mass percent about 5.2% to 6% aluminium, about 0.2% to 12.5% cobalt, about 2% to 7.8% chromium, about 0.4% to 2% molybdenum, about 5% to 8% tantalum and about 5% to 6% tungsten.

15. The process according to claim 1 , wherein the part is manufactured from the non-hafnium-doped nickel-based single-crystal superalloy by casting or additive manufacturing.

16. The process according to claim 1 , wherein the deposited layer of hafnium is a layer containing at least 99.99 atomic percent of hafnium.

17. The process according to claim 1 , wherein after the manufacturing step of the part from the non-hafnium-doped nickel-based single-crystal superalloy and before the depositing step of the layer of hafnium, the manufactured part is subjected to a solutioning treatment.

18. The process according to claim 17 , wherein the solutioning treatment consists of a first step of temperature increase until reaching a temperature of about 1,100° C. for a period comprised between a few minutes and 4 hours, followed by a second step of temperature increase until reaching a temperature of about 1,200° C. for a period comprised between a few minutes and 4 hours, and finally a third step of temperature increase until reaching a temperature of about 1,300° C. for a period comprised between a few minutes and 4 hours.

19. The process according to claim 1 , wherein the deposition of the layer of hafnium is carried out by a technique selected from low-pressure chemical vapour deposition (LPCVD), chemical vapour aluminizing (CVA), ultra-high vacuum chemical vapour deposition (UHVCVD), plasma enhanced chemical vapour deposition (PECVD), atmospheric pressure chemical vapour deposition (APCVD), and atomic layer chemical vapour deposition (ALCVD).

Assignees

• Safran

Inventors

• Saboundji Amar
• Jaquet Virginie

Classifications

• C23C10/28 Primary

  using solids, e.g. powders, pastes · CPC title

• C22C19/057

  with the maximum Cr content being less 10% · CPC title

• C23C14/165

  by cathodic sputtering · CPC title

• C23C14/5846 Primary

  Reactive treatment · CPC title