Material phase between conductive layers
US-11247165-B2 · Feb 15, 2022 · US
US11471789B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11471789-B2 |
| Application number | US-201816033657-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 12, 2018 |
| Priority date | Jul 12, 2018 |
| Publication date | Oct 18, 2022 |
| Grant date | Oct 18, 2022 |
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A chromatograph is provided for identifying components of a mixture. Components are identified by different rates of adsorption and/or desorption with a material phase. In one embodiment, an electrical lead is connected to the material phase for supplying an electrical charge to the material phase. The electrical charge alters the rate of adsorption/desorption of the components with the material phase. In another embodiment, the material phase is disposed between two conductors with electrical leads connected to each of the conductors. A charge differential between the two conductors alters the rate of adsorption and/or desorption of components with the material phase.
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The invention claimed is: 1. A chromatograph device comprising: a material phase configured to be exposed to a mixture comprising a plurality of components, the mixture entering an exposure area through an inlet and exiting the exposure area through an outlet, the exposure area containing the material phase, a first end of the material phase being adjacent the inlet, and a second end of the material phase opposite to the first end being adjacent the outlet, the components having different original rates of adsorption and desorption with the material phase when the material phase is not subjected to a first electrical charge; a first electrical lead connected to the first end of the material phase adjacent the inlet; wherein the first electrical charge is supplied to the material phase with at least the first electrical lead; and wherein the first electrical charge alters the original rates of adsorption and desorption of the components of the mixture with the material phase such that certain components of the plurality of components in the mixture traverse the exposure area slower or faster from the inlet to the outlet depending on a respective alteration of each component's respective original rate of adsorption/desorption caused by the first electrical charge; and a detector disposed at the outlet adjacent the second end of the material phase, the detector configured to detect and measure a quantity of each of the plurality of components of the mixture exiting through the outlet with respect to time, wherein the detector operates to identify one or more of the plurality of components in the mixture based on a timing characteristic of the one or more components detected at the outlet. 2. The chromatograph device according to claim 1 , wherein the material phase comprises a material with a limited electronic density of states in the vicinity of the Fermi level. 3. The chromatograph device according to claim 1 , wherein the material of the material phase comprises graphene, functionalized graphene, carbon nanotubes, surface functionalized nanotubes, molybdenum disulfide, a conducting polymer film, a semiconductor, semi-metal, or a semiconducting metal-organic-framework. 4. The chromatograph device according to claim 3 , wherein the material of the material phase comprises monolayer graphene, graphene oxide, graphane, polythiophene, polyaniline, polypyrrole, poylphenylene vinylene, polyphenylene sulfide, polyethylenedioxythiophene, (including copolymers and polymer mixtures), silicon, zinc oxide, silicon carbide, lead sulfide, C60, Alq3, carbon nanotubes, a vertically aligned nanotube array, or an aerogel. 5. The chromatograph device according to claim 4 , wherein the material phase comprises a vertically aligned nanotube array, nanowires or an aerogel. 6. The chromatograph device according to claim 1 , wherein the thickness of the material phase is less than 4 Debye lengths. 7. The chromatograph device according to claim 6 , wherein the thickness of the material phase is less than 2 Debye lengths. 8. The chromatograph device according to claim 1 , further comprising a third electrical lead connected to the material phase, wherein a third electrical charge different from the first electrical charge is supplied through the third electrical lead, a current thereby being applied to the material phase, and an electrical property being measured therefrom to detect a status of the material phase. 9. The chromatograph device according to claim 1 , further comprising a conductor and an insulating layer between the conductor and the material phase, a second electrical lead being connected to the conductor, wherein a second electrical charge different from the first electrical charge is supplied through the second electrical lead, the first and second electrical charges defining a voltage therebetween, a capacitive charge thereby being applied to the material phase, and an electrical property being measured therefrom to detect a status of the material phase. 10. The chromatograph device according to claim 1 , further comprising a silicon substrate with one or more layers or patterns deposited thereon, wherein the material phase comprises one of the one or more layers. 11. The chromatograph device according to claim 10 , further comprising a channel etched into the silicon substrate and/or the one or more layers deposited thereon, the material phase being deposited in the channel, and the channel being configured to flow the mixture therethrough. 12. The chromatograph device according to claim 1 , further comprising a conductor and an insulating layer between the conductor and the material phase, a second electrical lead being connected to the conductor, wherein a second electrical charge different from the first electrical charge is supplied through the second electrical lead, a capacitive charge thereby being applied to the material phase to alter the rates of adsorption and/or desorption of the components of the mixture with the material phase. 13. The chromatograph device according to claim 12 , wherein the first and second electrical charges define a DC voltage therebetween. 14. The chromatograph device according to claim 12 , wherein the conductor comprises a substrate of a first material with a smooth surface and a second different material disposed on the smooth surface defining a greater surface area than the smooth surface of the substrate, the insulating layer being conformally disposed over the smooth surface and the second different material, and the material phase being conformally disposed over the insulating layer, the insulating layer and the material phase thereby defining a greater surface area than the smooth surface of the substrate. 15. The chromatograph device according to claim 12 , wherein the conductor comprises a substrate with a roughened surface comprising protrusions or recesses formed thereon, the insulating layer being conformally disposed over the roughened surface, and the material phase being conformally disposed over the insulating layer, the insulating layer and the material phase thereby defining a three-dimensional surface. 16. The chromatograph device according to claim 12 , wherein the conductor comprises a substrate with a smooth surface, the insulating layer being disposed over the smooth surface of the substrate, and the material phase being disposed over the insulating layer. 17. The chromatograph device according to claim 16 , wherein the material phase comprises a vertically aligned nanotube array. 18. The chromatograph device according to claim 12 , further comprising a third electrical lead connected to the material phase, wherein a third electrical charge different from the first electrical charge is supplied through the third electrical lead, a current thereby being applied to the material phase, and an electrical property being measured therefrom to detect a status of the material phase. 19. The chromatograph device according to claim 13 , wherein the material phase comprises a material with a limited electronic density of states in the vicinity of the Fermi level. 20. The chromatograph device according to claim 19 , wherein the thickness of the material phase is less than 2 Debye lengths. 21. The chromatograph device according to claim 20 , wherein the conductor comprises a silicon substrate with one or more layers or patterns deposited thereon, wherein the material phase comprises one of the one or more layers, and comprising a channel etched into the silicon substrate an
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