Method for separating a removable composite structure by means of a light flux

Patent metadata

Field	Value
Publication number	US-11469367-B2
Application number	US-201917043456-A
Country	US
Kind code	B2
Filing date	Mar 22, 2019
Priority date	Mar 29, 2018
Publication date	Oct 11, 2022
Grant date	Oct 11, 2022

Abstract

A method for separating a removable composite structure using a light flux includes supplying the removable composite structure, which successively comprises: a substrate that is transparent to the light flux; an optically absorbent layer for at least partially absorbing a light flux; a sacrificial layer adapted to dissociate subject to the application of a temperature higher than a dissociation temperature and made of a material different from that of the optically absorbent layer; and at least one layer to be separated. The method further includes applying a light flux through the substrate, the light flux being at least partly absorbed by the optically absorbent layer, so as to heat the optically absorbent layer; heating the sacrificial layer by thermal conduction from the optically absorbent layer, up to a temperature that is greater than or equal to the dissociation temperature; and dissociating the sacrificial layer under the effect of the heating.

First claim

The invention claimed is:

1. A method for separating a composite structure that is dismantlable by application of a light flux, the method comprising:
providing the dismantlable composite structure comprising successively:
a substrate;
a first thermal barrier layer;
an optically absorbent layer comprising a material suitable for at least partially absorbing a light flux, the substrate and the first thermal barrier layer being substantially transparent to the light flux;
a sacrificial layer suitable for dissociating under the application of a temperature higher than a dissociation temperature, made of a material different from that of the optically absorbent layer;
at least one layer to be separated;

applying a light flux through the substrate, the light flux being absorbed at least in part by the optically absorbent layer, so as to heat the optically absorbent layer;
heating the sacrificial layer by thermal conduction from the optically absorbent layer, up to a temperature higher than or equal to the dissociation temperature; and
dissociating the sacrificial layer under the effect of the heating.

2. The method of claim 1 , wherein a product of a thickness of the substrate and of a coefficient of absorption of the light flux by the substrate is less than 0.1.

3. The method of claim 1 , wherein the product of the thickness of the optically absorbent layer and of the coefficient of absorption of the light flux by the optically absorbent layer is greater than 2.3.

4. The method of claim 1 , further comprising pulsing the light flux.

5. The method of claim 1 , wherein a wavelength of the light flux is between 100 and 12,000 nm.

6. The method of claim 1 , further comprising, before the application of the light flux, bonding the composite structure to a carrier, the dissociation of the sacrificial layer leading to a transfer of the layer to be separated to the carrier.

7. The method of claim 6 , wherein the carrier comprises at least one of the following materials:
a semiconductor material;
a metal; or
a polymer.

8. The method of claim 1 , wherein the sacrificial layer is in contact with the optically absorbent layer.

9. The method of claim 1 , wherein the sacrificial layer is substantially transparent to the light flux.

10. The method of claim 1 , further comprising, after dissociating the sacrificial layer, substantially completely removing the sacrificial layer from the at least one layer to be separated.

11. The method of claim 1 , wherein the structure further comprises a second thermal barrier layer located between the sacrificial layer and the layer to be separated.

12. The method of claim 11 , wherein the first and/or the second thermal barrier layer has a linear thermal conductivity coefficient of less than 10 W m −1 K −1 .

13. The method of claim 11 , wherein the first and/or the second thermal barrier layer comprises at least one of the following materials: silica (SiO 2 ) or alumina (Al 2 O 3 ).

14. The method of claim 1 , further comprising a first film suitable for reflecting or absorbing the light flux, the first film located between the sacrificial layer and the layer to be separated.

15. The method of claim 14 , wherein the first film comprises at least one of the following materials: silicon, silica (SiO 2 ), silicon carbide (SiC), molybdenum, or silicon nitride (Si 3 N 4 ).

16. The method of claim 14 , further comprising, between the sacrificial layer and the layer to be separated, a second film suitable for distributing the heat over the entire area of the structure.

17. The method of claim 16 , wherein the second film comprises at least one of the following materials: alumina (Al 2 O 3 ), silica (SiO 2 ), polycrystalline aluminum nitride (AlN), or polycrystalline silicon.

18. The method of claim 1 , wherein the substrate comprises at least one of the following materials: sapphire or quartz.

19. The method of claim 1 , wherein the optically absorbent layer comprises at least one of the following materials: silicon nitride (Si 3 N 4 ), polycrystalline silicon, or polycrystalline silicon carbide (SiC).

20. The method of claim 1 , wherein the sacrificial layer comprises at least one of the following materials: silicon nitride (Si 3 N 4 ), polycrystalline aluminum nitride (AlN), polycrystalline gallium nitride (GaN), or indium tin oxide (ITO).

21. The method of claim 1 , wherein the layer to be separated comprises at least one of the following materials:
a metal;
a group IV material having a hexagonal crystal structure;
a piezoelectric, ferromagnetic or ferroelectric material; or
a phase-change alloy.

Assignees

• Soitec Silicon On Insulator

Inventors

• Bethoux Jean-Marc
• Besnard Guillaume
• Sinquin Yann

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916 Primary

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P95/11

  Separation of active layers from substrates · CPC title

• H10P34/42 Primary

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H01L41/335 Primary

  Electricity · mapped topic