Large grain quasi-single-crystal film and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11466385-B2
Application number	US-202017132183-A
Country	US
Kind code	B2
Filing date	Dec 23, 2020
Priority date	Jul 27, 2020
Publication date	Oct 11, 2022
Grant date	Oct 11, 2022

Abstract

A large grain quasi-single-crystal film and a manufacturing method thereof are provided. The metal film having the <111> preferred orientation on its surface is subjected to mechanical tensile force to make the arrangement of crystal grains more ordered. The metal film is grown into a film with large crystal grains having an average diameter of over 500 microns by annealing at a temperature below the recrystallization temperature, thereby obtaining a large grain quasi-single-crystal film having the preferred directions of three axes. The large grain quasi-single-crystal film has a <110> preferred orientation along the tensile direction and a <211> preferred orientation along the direction vertical to the tensile force, and maintains a <111> preferred orientation on its top surface. The present invention can be used to produce highly anisotropic large-area quasi-single-crystal films, and can also be applied to grow 2-dimensional materials or develop anisotropic structures.

First claim

What is claimed is:

1. A large grain quasi-single-crystal film, comprising a plurality of close packed crystal grains, wherein said crystal grains in over 50% area of a surface of said large grain quasi-single-crystal film have a <111> preferred orientation; after an annealing process and a mechanical tensile force is applied to a nano-twins copper film along a stretching direction such that the nano-twins copper film is plastically deformed and annealed to obtain the large grain quasi-single-crystal film, said crystal grains in over 50% area has a <110> preferred orientation along a tensile direction, said crystal grains in over 50% area has a <211> preferred orientation along a direction vertical to said tensile direction, and said crystal grains in over 50% area has a <111> preferred orientation; said crystal grain has an average diameter of over 500 μm.

2. The large grain quasi-single-crystal film according to claim 1 , wherein said surface is a ( 111 ) crystallographic plane.

3. The large grain quasi-single-crystal film according to claim 1 , wherein said large grain quasi-single-crystal film includes a plurality of columnar crystal grains.

4. The large grain quasi-single-crystal film according to claim 1 , wherein said large grain quasi-single-crystal film includes a single layer structure or a multilayer composite structure.

5. The large grain quasi-single-crystal film according to claim 4 , wherein a cover layer is formed on at least one surface of said multilayer composite structure.

6. A method for manufacturing a large grain quasi-single-crystal film, comprising steps:
providing a metal film, which includes a plurality of close packed crystal grains, wherein said crystal grains in over 50% area of a surface of said metal film has a <111> preferred orientation;
applying a mechanical tensile force to said metal film along a tensile direction until said metal film is plastically deformed to acquire a quasi-single-crystal film; and
annealing said quasi-single-crystal film at a temperature lower than a recrystallization temperature to acquire a large grain quasi-single-crystal film, wherein said crystal grains in over 50% area of said large grain quasi-single-crystal film has a <110> preferred orientation along said tensile direction; said crystal grains in over 50% area of said large grain quasi-single-crystal film has a <211>preferred orientation along a direction vertical to said tensile direction; said crystal grains has an average diameter of over 500 μm.

7. The method for manufacturing a large grain quasi-single-crystal film according to claim 6 , wherein said crystal grains in over 50% area of said quasi-single-crystal film has a <211> preferred orientation along said tensile direction; said crystal grains in over 50% area of said quasi-single-crystal film has a <110> preferred orientation along a direction vertical to said tensile direction.

8. The method for manufacturing a large grain quasi-single-crystal film according to claim 6 , wherein said surface is a ( 111 ) crystallographic plane.

9. The method for manufacturing a large grain quasi-single-crystal film according to claim 6 , wherein said metal film includes a plurality of columnar crystal grains.

10. The method for manufacturing a large grain quasi-single-crystal film according to claim 6 , wherein said metal film is made of a material selected from a group including silver, copper, nickel, palladium and magnesium.

11. The method for manufacturing a large grain quasi-single-crystal film according to claim 6 , wherein said step of applying a mechanical tensile force makes said metal film have an over 10% deformation.

12. The method for manufacturing a large grain quasi-single-crystal film according to claim 6 , wherein said step of annealing is undertaken at a temperature of 100-500° C. for one hour.

Assignees

• Univ National Chiao Tung
• National Yang Ming Chiao Tung Univ

Inventors

• Chen Chih
• Li yu-jin

Classifications

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• C21D9/46 Primary

  for sheet metals · CPC title

• C21D2201/05

  Grain orientation · CPC title

• C30B29/10

  Inorganic compounds or compositions · CPC title