Methods of Depositing SiCON with C, O and N Compositional Control
US-2017323775-A1 · Nov 9, 2017 · US
Vapor deposition precursor compounds and process of use
US11466038B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11466038-B2 |
| Application number | US-202016899060-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 11, 2020 |
| Priority date | Jun 11, 2020 |
| Publication date | Oct 11, 2022 |
| Grant date | Oct 11, 2022 |
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- Title
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Abstract
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Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.
First claim
Opening claim text (preview).
What is claimed is: 1. A compound of the formula wherein each R is methyl. 2. Compounds of the formula wherein (i) each R 2 is a group of the formula or (ii) wherein one R 2 is hydrogen and the other R 2 is a group of the formula
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Classifications
the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title
the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title
deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title
in the presence of a plasma [PECVD] · CPC title
the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title
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- What does patent US11466038B2 cover?
- Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to …
- Who is the assignee on this patent?
- Entegris Inc
- What technology area does this patent fall under?
- Primary CPC classification C23C16/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 11 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).