Resist composition, method of forming resist pattern, and compound

US11460770B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11460770-B2
Application numberUS-201916700780-A
CountryUS
Kind codeB2
Filing dateDec 2, 2019
Priority dateDec 4, 2018
Publication dateOct 4, 2022
Grant dateOct 4, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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A resist composition containing a base material component of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, R bd1 to R bd3 each independently represent an aryl group which may have a substituent, provided that one or more of R bd1 to R bd3 are aryl groups having a fluorinated alkyl group which may have a substituent, and at least one of the fluorinated alkyl groups which may have a substituent in these aryl groups is bonded to a carbon atom adjacent to a carbon atom that is bonded to a sulfur atom in the formula, and a total number of the fluorinated alkyl groups which may have a substituent is 2 or more; X − represents a counter anion.

First claim

Opening claim text (preview).

What is claimed is: 1. A resist composition which generates an acid upon exposure and of which solubility in a developing solution is changed due to an action of an acid, the resist composition comprising: a base material component (A) of which solubility in a developing solution is changed due to an action of an acid; and a compound (BD1) including an anion moiety and a cation moiety and represented by Formula (bd1): wherein R 01 represents a fluorinated alkyl group which may have a substituent, R 05 represents a hydrogen atom or a fluorinated alkyl group which may have a substituent; R 02 to R 04 represent a hydrogen atom; R bd2 and R bd3 each independently represent an aryl group which may have a substituent, R bd2 and R bd3 may be bonded to each other to form a fused ring together with the sulfur atom in the formula; provided that a total number of the fluorinated alkyl groups which may have a substituent bonded to a carbon atom adjacent to a carbon atom that is bonded to the sulfur atom in the formula is 2 or more; and X − represents a counter anion. 2. The resist composition according to claim 1 , wherein the compound (BD1) is a compound represented by Formula (bd1-1), wherein R 01 represents a fluorinated alkyl group which may have a substituent, R 05 , R 06 , R 10 , R 11 , and R 15 each independently represent a hydrogen atom or a fluorinated alkyl group which may have a substituent; provided that two or more of R 01 , R 05 , R 06 , R 10 , R 11 , and R 15 are fluorinated alkyl groups which may have a substituent; R 02 to R 04 represent a hydrogen atom; R 07 to R 09 , and R 12 to R 14 represent a hydrogen atom, an alkyl group, an alkoxy group, an acyl group, a sulfonyl group, a sulfonylalkyl group, a hydroxyl group, a carbonyl group, a cyano group, a nitro group, or an amino group; and X − represents a counter anion. 3. A method of forming a resist pattern, comprising: forming a resist film on a support using the resist composition according to claim 1 ; exposing the resist film; and developing the exposed resist film to form a resist pattern. 4. The method of forming a resist pattern according to claim 3 , wherein the resist film is exposed with extreme ultraviolet (EUV) rays or electron beams (EB). 5. A compound comprising an anion moiety and a cation moiety and represented by Formula (bd1): wherein R 01 represents a fluorinated alkyl group which may have a substituent, R 05 represents a hydrogen atom or a fluorinated alkyl group which may have a substituent; R 02 to R 04 represent a hydrogen atom; R bd2 and R bd3 each independently represent an aryl group which may have a substituent, R bd2 and R bd3 may be bonded to each other to form a fused ring together with the sulfur atom in the formula; provided that a total number of the fluorinated alkyl groups which may have a substituent bonded to a carbon atom adjacent to a carbon atom that is bonded to the sulfur atom in the formula is 2 or more; and X − represents a counter anion. 6. The compound according to claim 5 comprising an anion moiety and a cation moiety and represented by Formula (bd1-1): wherein R 01 represents a fluorinated alkyl group which may have a substituent, R 05 , R 06 , R 10 , R 11 , and R 15 each independently represent a hydrogen atom or a fluorinated alkyl group which may have a substituent; provided that two or more of R 01 , R 05 , R 06 , R 10 , R 11 , and R 15 are fluorinated alkyl groups which may have a substituent; R 02 to R 04 represent a hydrogen atom; R 07 to R 09 , and R 12 to R 14 represent a hydrogen atom, an alkyl group, an alkoxy group, an acyl group, a sulfonyl group, a sulfonylalkyl group, a hydroxyl group, a carbonyl group, a cyano group, a nitro group, or an amino group; and X − represents a counter anion.

Assignees

Inventors

Classifications

  • Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) · CPC title

  • G03F7/0045Primary

    with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • G03F7/0397Primary

    the macromolecular compound having an alicyclic moiety in a side chain · CPC title

  • Sulfonium compounds · CPC title

  • characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

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What does patent US11460770B2 cover?
A resist composition containing a base material component of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, R bd1 to R bd3 each independently represent an aryl group which may have a substituent, provided that one or more of R bd1 to R bd3 are aryl groups having a fluorinated alkyl group which may…
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/0045. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 04 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).